2016 IEEE International Electron Devices Meeting (IEDM)最新文献_第3页

Thinnest transparent epidermal sensor system based on graphene 基于石墨烯的最薄透明表皮传感器系统

2016 IEEE International Electron Devices Meeting (IEDM) Pub Date : 2016-12-01 DOI: 10.1109/IEDM.2016.7838446

S. K. Ameri, R. Ho, H. Jang, Yu Wang, David M Schnyer, D. Akinwande, N. Lu

引用次数: 9

Processing and characterization of Si/Ge quantum dots Si/Ge量子点的制备与表征

2016 IEEE International Electron Devices Meeting (IEDM) Pub Date : 2016-12-01 DOI: 10.1109/IEDM.2016.7838532

S. Miyazaki, K. Makihara, A. Ohta, M. Ikeda

引用次数: 1

Acceptor-like trap effect on negative-bias temperature instability (NBTI) of SiGe pMOSFETs on SRB 类受体陷阱对SRB上SiGe pmosfet负偏置温度不稳定性的影响

2016 IEEE International Electron Devices Meeting (IEDM) Pub Date : 2016-12-01 DOI: 10.1109/IEDM.2016.7838518

G. Jiao, M. Toledano-Luque, K. Nam, Nakanishi Toshiro, Seung-Hun Lee, Jin-Soak Kim, T. Kauerauf, Eun-ae Chung, D. Bae, Geumjong Bae, Dong-Won Kim, K. Hwang

引用次数: 5

A CMOS-compatible large-scale monolithic integration of heterogeneous multi-sensors on flexible silicon for IoT applications 用于物联网应用的柔性硅上异构多传感器的cmos兼容大规模单片集成

2016 IEEE International Electron Devices Meeting (IEDM) Pub Date : 2016-12-01 DOI: 10.1109/IEDM.2016.7838448

J. M. Nassar, G. T. Sevilla, Seneca J. Velling, M. D. Cordero, M. Hussain

引用次数: 10

Understanding RRAM endurance, retention and window margin trade-off using experimental results and simulations 使用实验结果和模拟来理解RRAM的续航力、保留率和窗口裕度权衡

2016 IEEE International Electron Devices Meeting (IEDM) Pub Date : 2016-12-01 DOI: 10.1109/IEDM.2016.7838346

C. Nail, G. Molas, P. Blaise, G. Piccolboni, B. Sklénard, C. Cagli, M. Bernard, A. Roule, M. Azzaz, E. Vianello, C. Carabasse, R. Berthier, D. Cooper, C. Pelissier, T. Magis, G. Ghibaudo, C. Vallée, D. Bedeau, D. Bedau, O. Mosendz, B. De Salvo, L. Perniola

引用次数: 75

Highly functional and reliable 8Mb STT-MRAM embedded in 28nm logic 高功能和可靠的8Mb STT-MRAM嵌入在28nm逻辑

2016 IEEE International Electron Devices Meeting (IEDM) Pub Date : 2016-12-01 DOI: 10.1109/IEDM.2016.7838491

Y. Song, J. Lee, H. Shin, K. H. Lee, K. Suh, J. R. Kang, S. Pyo, H. Jung, S. Hwang, G. Koh, Sechung Oh, Soojeoung Park, Jinhak Kim, Jae-Kyun Park, Ju-Sik Kim, K. Hwang, G. Jeong, K. Lee, E. Jung

引用次数: 84

Study of RF-circuit linearity performance of GaN HEMT technology using the MVSG compact device model 基于MVSG紧凑器件模型的GaN HEMT技术射频电路线性性能研究

2016 IEEE International Electron Devices Meeting (IEDM) Pub Date : 2016-12-01 DOI: 10.1109/IEDM.2016.7838341

U. Radhakrishna, Pilsoon Choi, J. Grajal, L. Peh, T. Palacios, D. Antoniadis

{"title":"Study of RF-circuit linearity performance of GaN HEMT technology using the MVSG compact device model","authors":"U. Radhakrishna, Pilsoon Choi, J. Grajal, L. Peh, T. Palacios, D. Antoniadis","doi":"10.1109/IEDM.2016.7838341","DOIUrl":"https://doi.org/10.1109/IEDM.2016.7838341","url":null,"abstract":"This study is a first demonstration of the use of a physical compact model as a tool to identify technology bottlenecks to the linearity performance of emerging devices such as GaN HEMTs and to provide solutions to improve linearity both through device-design and circuit-design techniques. GaN-based HEMTs are emerging as key technology solutions in wireless communication systems that can address the increasing demand for highly efficient, linear amplification of digitally modulated information to cater to new applications such as personal communication, internet of things, 5G etc [1]. The primary advantage of GaN-HEMTs in terms of higher bandgap, carrier-mobility and charge-density can yield better output power (Pout), and power-added-efficiency (PAE) but the linearity behavior of GaN-based power amplifiers (PAs) that trades-off with the aforementioned figures of merit (FoMs) is still to be understood. Non-linearity results in adjacent channel interference, spectral regrowth, and degrading error vector magnitude (EVM) that impose bandwidth constraints and higher bit error rate (BER) for complex modulated signals.","PeriodicalId":186544,"journal":{"name":"2016 IEEE International Electron Devices Meeting (IEDM)","volume":"102 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115805600","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 23

Quantum information processing in a silicon-based system 硅基系统中的量子信息处理

2016 IEEE International Electron Devices Meeting (IEDM) Pub Date : 2016-12-01 DOI: 10.1109/IEDM.2016.7838538

Tsung-Yeh Yang, A. Andreev, Y. Yamaoka, T. Ferrus, S. Oda, T. Kodera, D. Williams

引用次数: 3

Thermal resistance modeling of back-end interconnect and intrinsic FinFETs, and transient simulation of inverters with capacitive loading effects 后端互连和本征finfet的热阻建模，以及电容负载效应逆变器的瞬态仿真

2016 IEEE International Electron Devices Meeting (IEDM) Pub Date : 2016-12-01 DOI: 10.1109/IEDM.2016.7838550

Jhih-Yang Yan, Sun-Rong Jan, Yu-Jiun Peng, H. H. Lin, W. K. Wan, Y.-H. Huang, B. Hung, K.T. Chan, Michael Huang, M. Yang, C. Liu

{"title":"Thermal resistance modeling of back-end interconnect and intrinsic FinFETs, and transient simulation of inverters with capacitive loading effects","authors":"Jhih-Yang Yan, Sun-Rong Jan, Yu-Jiun Peng, H. H. Lin, W. K. Wan, Y.-H. Huang, B. Hung, K.T. Chan, Michael Huang, M. Yang, C. Liu","doi":"10.1109/IEDM.2016.7838550","DOIUrl":"https://doi.org/10.1109/IEDM.2016.7838550","url":null,"abstract":"A two-step pseudo isothermal plane model is used to calculate the thermal resistance of BEOL (Rth, beol). The intrinsic thermal resistances of 14nm FinFETs (Rth0, Device) are extracted with face-up (conventional measurement, heat flow from the channel to substrate) and face-down (flip-chip, heat flow from the channel to metal contact) configurations. Since the free convection of air has a large thermal resistance, the heat flow direction affects Rth0, Device. The face-up Rth0, Device is higher than face-down Rth0, Device. This is more significant for multi-finger FinFETs. The volume of hot spot affects the cooling time. In an inverter, the maximum temperature (Tmax) of pFET is higher than nFET due to the low thermal conductivity of SiGe S/D. Tmax and the high temperature duration can be controlled by the current and output capacitive loading of the inverter. The residual temperature in the channel and the temperatures of M1 layer are found too low to reflect the real device temperature, which may lead to an underestimation of device temperature with transient AC input.","PeriodicalId":186544,"journal":{"name":"2016 IEEE International Electron Devices Meeting (IEDM)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114672872","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 22

Two-dimensional transistors based on MoS2 lateral heterostructures 基于二硫化钼横向异质结构的二维晶体管

2016 IEEE International Electron Devices Meeting (IEDM) Pub Date : 2016-12-01 DOI: 10.1109/IEDM.2016.7838413

D. Marian, Elias Dib, T. Cusati, Alessandro Fortunelli, G. Iannaccone, G. Fiori

引用次数: 7