类受体陷阱对SRB上SiGe pmosfet负偏置温度不稳定性的影响

2016 IEEE International Electron Devices Meeting (IEDM) Pub Date : 2016-12-01 DOI:10.1109/IEDM.2016.7838518

G. Jiao, M. Toledano-Luque, K. Nam, Nakanishi Toshiro, Seung-Hun Lee, Jin-Soak Kim, T. Kauerauf, Eun-ae Chung, D. Bae, Geumjong Bae, Dong-Won Kim, K. Hwang

{"title":"类受体陷阱对SRB上SiGe pmosfet负偏置温度不稳定性的影响","authors":"G. Jiao, M. Toledano-Luque, K. Nam, Nakanishi Toshiro, Seung-Hun Lee, Jin-Soak Kim, T. Kauerauf, Eun-ae Chung, D. Bae, Geumjong Bae, Dong-Won Kim, K. Hwang","doi":"10.1109/IEDM.2016.7838518","DOIUrl":null,"url":null,"abstract":"In this work, the oxide electric field (Eox) reduction caused by negatively charged traps is proposed to explain the robustness of SiGe pMOSFETs to negative gate bias temperature instability (NBTI) stress. The high density of negatively charged acceptor-like traps close to the SiGe valance band (Ev) lowers the Eox and reduces the NBTI degradation at fixed overdrive. We demonstrate that trap engineering can be exploited to meet aggressive reliability requirements. Furthermore, it is predicted that there are no reliability issues in the SiGe pMOSFETs comparing with the Si counterparts.","PeriodicalId":186544,"journal":{"name":"2016 IEEE International Electron Devices Meeting (IEDM)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Acceptor-like trap effect on negative-bias temperature instability (NBTI) of SiGe pMOSFETs on SRB\",\"authors\":\"G. Jiao, M. Toledano-Luque, K. Nam, Nakanishi Toshiro, Seung-Hun Lee, Jin-Soak Kim, T. Kauerauf, Eun-ae Chung, D. Bae, Geumjong Bae, Dong-Won Kim, K. Hwang\",\"doi\":\"10.1109/IEDM.2016.7838518\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work, the oxide electric field (Eox) reduction caused by negatively charged traps is proposed to explain the robustness of SiGe pMOSFETs to negative gate bias temperature instability (NBTI) stress. The high density of negatively charged acceptor-like traps close to the SiGe valance band (Ev) lowers the Eox and reduces the NBTI degradation at fixed overdrive. We demonstrate that trap engineering can be exploited to meet aggressive reliability requirements. Furthermore, it is predicted that there are no reliability issues in the SiGe pMOSFETs comparing with the Si counterparts.\",\"PeriodicalId\":186544,\"journal\":{\"name\":\"2016 IEEE International Electron Devices Meeting (IEDM)\",\"volume\":\"7 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE International Electron Devices Meeting (IEDM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2016.7838518\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE International Electron Devices Meeting (IEDM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2016.7838518","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 5

摘要

在这项工作中，提出了由负电荷陷阱引起的氧化电场(Eox)减少来解释SiGe pmosfet对负栅极偏置温度不稳定性(NBTI)应力的稳健性。靠近SiGe价带(Ev)的高密度带负电荷的类受体陷阱降低了Eox，并减少了固定超速下NBTI的降解。我们证明陷阱工程可以用来满足激进的可靠性要求。此外，预计与Si对应物相比，SiGe pmosfet不存在可靠性问题。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Acceptor-like trap effect on negative-bias temperature instability (NBTI) of SiGe pMOSFETs on SRB

In this work, the oxide electric field (Eox) reduction caused by negatively charged traps is proposed to explain the robustness of SiGe pMOSFETs to negative gate bias temperature instability (NBTI) stress. The high density of negatively charged acceptor-like traps close to the SiGe valance band (Ev) lowers the Eox and reduces the NBTI degradation at fixed overdrive. We demonstrate that trap engineering can be exploited to meet aggressive reliability requirements. Furthermore, it is predicted that there are no reliability issues in the SiGe pMOSFETs comparing with the Si counterparts.

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2016 IEEE International Electron Devices Meeting (IEDM)

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