Y. Song, J. Lee, H. Shin, K. H. Lee, K. Suh, J. R. Kang, S. Pyo, H. Jung, S. Hwang, G. Koh, Sechung Oh, Soojeoung Park, Jinhak Kim, Jae-Kyun Park, Ju-Sik Kim, K. Hwang, G. Jeong, K. Lee, E. Jung
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引用次数: 84
Abstract
We fabricated 8Mb 1T-1MTJ STT-MRAM macro embedded in 28nm CMOS logic platform by developing novel integration/stack/patterning technologies. MTJ memory cell array was successfully embedded into Cu backend without open fail and severe degradation of magnetic property. Advanced perpendicular MTJ stack using MgO/CoFeB was developed to show high TMR value of 180% after full integration. In addition, ion beam etching (IBE) process was optimized with power, angle, and pressure to reduce a short fail below 1 ppm. Through these novel technologies, we demonstrated highly functional and reliable 8Mb eMRAM macro having a wide sensing margin and strong retention property of 85 0C and 10yrs.
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