使用实验结果和模拟来理解RRAM的续航力、保留率和窗口裕度权衡

2016 IEEE International Electron Devices Meeting (IEDM) Pub Date : 2016-12-01 DOI:10.1109/IEDM.2016.7838346

C. Nail, G. Molas, P. Blaise, G. Piccolboni, B. Sklénard, C. Cagli, M. Bernard, A. Roule, M. Azzaz, E. Vianello, C. Carabasse, R. Berthier, D. Cooper, C. Pelissier, T. Magis, G. Ghibaudo, C. Vallée, D. Bedeau, D. Bedau, O. Mosendz, B. De Salvo, L. Perniola

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引用次数: 75

摘要

本文首次阐明了电阻式RAM的续航力、窗口裕度和保持力之间的关系。为此，研究了各种类型的RRAM (OXRAM和CBRAM)，显示出高达1010个周期的高窗口余量或300°C的高保留率。从第一性原理计算出发，分析了各种RRAM技术的导电灯丝组成，提取了关键的灯丝特征。然后，我们提出了一个分析模型来计算耐久性，窗口裕度和保留率之间的依赖关系，将材料参数与记忆特性联系起来。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Understanding RRAM endurance, retention and window margin trade-off using experimental results and simulations

In this paper we clarify for the first time the correlation between endurance, window margin and retention of Resistive RAM. To this aim, various classes of RRAM (OXRAM and CBRAM) are investigated, showing high window margin up to 1010 cycles or high 300°C retention. From first principle calculations, we analyze the conducting filament composition for the various RRAM technologies, and extract the key filament features. We then propose an analytical model to calculate the dependence between endurance, window margin and retention, linking material parameters to memory characteristics.

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2016 IEEE International Electron Devices Meeting (IEDM)

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