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2005 International Conference on MEMS,NANO and Smart Systems最新文献

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Differential reflection characteristics for optical probing of nanoscale anisotropic layered system 纳米各向异性层状系统光学探测的差分反射特性
2005 International Conference on MEMS,NANO and Smart Systems Pub Date : 2005-07-24 DOI: 10.1109/ICMENS.2005.42
P. Adamson
{"title":"Differential reflection characteristics for optical probing of nanoscale anisotropic layered system","authors":"P. Adamson","doi":"10.1109/ICMENS.2005.42","DOIUrl":"https://doi.org/10.1109/ICMENS.2005.42","url":null,"abstract":"The reflection of linearly polarized light from an N-layer system of nanometer-size anisotropic insulating films is investigated. The approximate expressions for reflection characteristics are derived. All analytical results are supported by computer-aided analysis made on the basis of general wave propagation theory for anisotropic layered media. It is show that the accuracy of the long-wavelength approximation for nanoscopic anisotropic layered systems is quite satisfactory: if the thickness of a multilayer divided by the wavelength comprises only a few hundredths, then the error of approximate expressions will be of the order of several percent. The most useful feature of obtained formulas is that they are simply invertible, allowing a direct calculation of the parameters of nanoscale layers.","PeriodicalId":185824,"journal":{"name":"2005 International Conference on MEMS,NANO and Smart Systems","volume":"62 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116449302","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Microfabricated silicon nanopore membranes provide continuous delivery of biopharmaceuticals 微晶硅纳米孔膜提供生物药品的连续输送
2005 International Conference on MEMS,NANO and Smart Systems Pub Date : 2005-07-24 DOI: 10.1109/ICMENS.2005.70
P. Gardner
{"title":"Microfabricated silicon nanopore membranes provide continuous delivery of biopharmaceuticals","authors":"P. Gardner","doi":"10.1109/ICMENS.2005.70","DOIUrl":"https://doi.org/10.1109/ICMENS.2005.70","url":null,"abstract":"Continuous delivery of bio-pharmaceuticals can provide important patient benefits including improved safety, better compliance, and improved efficacy. Drugs released from devices implanted under the skin, including mechanical pumps, are able to reach a steady state level in plasma .In practice, however, mechanical pumps face two key limitations: small volume/drug carrying capacity and formulation instability. In general, for proper pumping action, the drug must be in solution within the device reservoir, either in an aqueous medium or in a biocompatible, water-miscible solvent such as ethanol or DMSO.The mechanism of delivery relies on the unexpected finding that diffusion from a reservoir containing a high concentration of a solute to a reservoir of lower concentration through microfabricated nanochannels.The small implantable device applicable to the delivery of a wide range of drugs, including biopharmaceuticals. Zero-order release of several molecules has been documented in vitro.The drug loaded into the NanoGATE reservoir need not be in solution with the diffusion release mechanism, it is possible to fill the reservoir with a suspension of the drug, significantly increasing the carrying capacity of the system. Moreover, this approach provides formulation options to improve the long term stability of the loaded drug not possible with existing mechanical systems.","PeriodicalId":185824,"journal":{"name":"2005 International Conference on MEMS,NANO and Smart Systems","volume":"389 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129595365","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Modeling, simulation, and testing of the mechanical dynamics of an RF MEMS switch 建模，仿真和测试的机械动力学的射频MEMS开关
2005 International Conference on MEMS,NANO and Smart Systems Pub Date : 2005-07-24 DOI: 10.1109/ICMENS.2005.77
J. Massad, H. Sumali, D. Epp, C. Dyck
{"title":"Modeling, simulation, and testing of the mechanical dynamics of an RF MEMS switch","authors":"J. Massad, H. Sumali, D. Epp, C. Dyck","doi":"10.1109/ICMENS.2005.77","DOIUrl":"https://doi.org/10.1109/ICMENS.2005.77","url":null,"abstract":"Mechanical dynamics can be a determining factor for the switching speed of radio-frequency microelectromechanical systems (RF MEMS) switches. This paper presents the simulation of the mechanical motion of a microswitch under actuation. The switch has a plate suspended by springs. When an electrostatic actuation is applied, the plate moves toward the substrate and closes the switch. Simulations are calculated via a high-fidelity finite element model that couples solid dynamics with electrostatic actuation. It incorporates non-linear coupled dynamics and accommodates fabrication variations. Experimental modal analysis gives results in the frequency domain that verifies the natural frequencies and mode shapes predicted by the model. An effective 1D model is created and used to calculate an actuation voltage waveform that minimizes switch velocity at closure. In the experiment, the switch is actuated with this actuation voltage, and the displacements of the switch at various points are measured using a laser Doppler velocimeter through a microscope. The experiments are repeated on several switches from different batches. The experimental results verify the model.","PeriodicalId":185824,"journal":{"name":"2005 International Conference on MEMS,NANO and Smart Systems","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132740141","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 32
Ferromagnetic III-V semiconductor films with high transition temperature 高转变温度铁磁III-V型半导体薄膜
2005 International Conference on MEMS,NANO and Smart Systems Pub Date : 2005-07-24 DOI: 10.1109/ICMENS.2005.51
L. Däweritz, K. Ploog
{"title":"Ferromagnetic III-V semiconductor films with high transition temperature","authors":"L. Däweritz, K. Ploog","doi":"10.1109/ICMENS.2005.51","DOIUrl":"https://doi.org/10.1109/ICMENS.2005.51","url":null,"abstract":"The fabrication process of the GaAs-based materials included the deposition of the (Ga,Mn)As alloy at low temperature by conventional solid-source molecular beam epitaxy (MBE) and subsequent thermal annealing. The ferromagnetic and paramagnetic phases are found to coexist in the whole temperature range below Tc. Rapid thermal annealing turns the ferromagnetic (Ga,Mn)As into a paramagnetic matrix. The structural and magnetic properties of granular films prepared by using different annealing recipes have been investigated by X-ray diffraction, superconducting quantum interference device magnetometry, and transmission electron microscopy. The temperature dependence of the lattice parameter a of the nanoclusters also exhibits a significant variation around the bulk MnAs phase transition temperature.","PeriodicalId":185824,"journal":{"name":"2005 International Conference on MEMS,NANO and Smart Systems","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132993716","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Genetically engineered polypeptide for differential recognition of platinum on microfabricated structures 用于在微加工结构上对铂进行不同识别的基因工程多肽
2005 International Conference on MEMS,NANO and Smart Systems Pub Date : 2005-07-24 DOI: 10.1109/ICMENS.2005.54
M. Gungormus, X. Xiong, Candan Tamler, B. Parviz, M. Sarikaya
{"title":"Genetically engineered polypeptide for differential recognition of platinum on microfabricated structures","authors":"M. Gungormus, X. Xiong, Candan Tamler, B. Parviz, M. Sarikaya","doi":"10.1109/ICMENS.2005.54","DOIUrl":"https://doi.org/10.1109/ICMENS.2005.54","url":null,"abstract":"By evolution, nature has created an astonishing collection of micro and nano scale structures. In this paper, we discuss the development of a \"molecular toolkit\" which builds the basis for the biomimetic natural processes. As the first step, we have demonstrated the capability to identify polypeptides that specifically bind to an inorganic (platinum) and differentiate between this metal and other inorganic surfaces such as silicon dioxide and gold. We have achieved the integration of the polypeptides with a microfabricated heterogeneous substrate, by selectively immobilizing them on the specific inorganic materials. In the future, this \"toolkit\", integrating micro-, nano- and biotechnology, can be used for the development of new generation of biomimetic manufacturing process.","PeriodicalId":185824,"journal":{"name":"2005 International Conference on MEMS,NANO and Smart Systems","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129418033","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Hysteresis spring single digital input bistable mechanism 滞回弹簧单数字输入双稳机构
2005 International Conference on MEMS,NANO and Smart Systems Pub Date : 2005-07-24 DOI: 10.1109/ICMENS.2005.5
I. Foulds, M. Parameswaran
{"title":"Hysteresis spring single digital input bistable mechanism","authors":"I. Foulds, M. Parameswaran","doi":"10.1109/ICMENS.2005.5","DOIUrl":"https://doi.org/10.1109/ICMENS.2005.5","url":null,"abstract":"This paper presents the first reported microfabricated single digital input bistable MEMS mechanism. The bistable mechanism is an important building block for many MEMS. Applications of bistable mechanisms include optical switches, microrelays and motor transmissions. Current literature contains examples of dual digital input and single analog input bistable mechanisms; however, no single digital input bistable mechanisms have yet been reported. This work develops the hysteresis spring as an enabling mechanism to allow the creation of the first reported single digital input bistable mechanism. The functionality of the hysteresis spring single digital input bistable mechanism is described and an analytical model is developed. The analytical model is shown to agree with experimental results. The proof of concept design has been fabricated and the prescribed functionality has been shown experimentally.","PeriodicalId":185824,"journal":{"name":"2005 International Conference on MEMS,NANO and Smart Systems","volume":"135 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116626248","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Optical MEMS pressure sensor using ring resonator on a circular diaphragm 光学MEMS压力传感器采用环形谐振器在圆形膜片上
2005 International Conference on MEMS,NANO and Smart Systems Pub Date : 2005-07-24 DOI: 10.1109/ICMENS.2005.94
P. Pattnaik, B. Vijayaaditya, T. Srinivas, A. Selvarajan
{"title":"Optical MEMS pressure sensor using ring resonator on a circular diaphragm","authors":"P. Pattnaik, B. Vijayaaditya, T. Srinivas, A. Selvarajan","doi":"10.1109/ICMENS.2005.94","DOIUrl":"https://doi.org/10.1109/ICMENS.2005.94","url":null,"abstract":"In this paper we propose and analyse an optical MEMS pressure sensor consisting of a ring resonator located over the edge of a circular silicon diaphragm. As the diaphragm deflects due to the applied pressure, stress induced refractive index change in the waveguide leads to change in phase of the light propagating through resonator. Shift in the resonance frequency due to this phase change gives the measure of the applied pressure. The phase response of the sensor is found to be about 19 /spl mu/rad/Pa for 1 mm radius 65 /spl mu/m thick circular diaphragm. The wavelength shift of 0.78 pm/kPa is obtained for this sensor and can be used up to a range of 300 kPa. Since the wavelength of operation is around 1.55 /spl mu/m, hybrid integration of source and detector is possible on the same substrate. This type of sensor can be used for blood pressure monitoring, precession instrumentation, aerospace propulsion application and other harsh environments with suitable design.","PeriodicalId":185824,"journal":{"name":"2005 International Conference on MEMS,NANO and Smart Systems","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125059484","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 35
Spinwaves in spintronics structures 自旋电子学结构中的自旋波
2005 International Conference on MEMS,NANO and Smart Systems Pub Date : 2005-07-24 DOI: 10.1109/ICMENS.2005.111
C. Falco, J. Shaw, T. Reith
{"title":"Spinwaves in spintronics structures","authors":"C. Falco, J. Shaw, T. Reith","doi":"10.1109/ICMENS.2005.111","DOIUrl":"https://doi.org/10.1109/ICMENS.2005.111","url":null,"abstract":"We have been applying in situ and ex situ spin-wave Brillouin Light Scattering (BLS) techniques to spinwave structures we are growing by Molecular Beam Epitaxy (MBE). The sensitivity of our BLS technique is illustrated by our ability to measure spin-wave excitations for samples as thin as 1 monolayer of Co buried by as much as 20 nanometers of Au. This talk will describe the use of in situ and ex situ BLS in combination with appropriate structural probes to determine the origin of several interesting and useful physical phenomena in spintronics structures.","PeriodicalId":185824,"journal":{"name":"2005 International Conference on MEMS,NANO and Smart Systems","volume":"87 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127149667","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Spin polarized transport effects in III-V semiconductor heterostructures III-V型半导体异质结构中的自旋极化输运效应
2005 International Conference on MEMS,NANO and Smart Systems Pub Date : 2005-07-24 DOI: 10.1109/ICMENS.2005.109
J. George
{"title":"Spin polarized transport effects in III-V semiconductor heterostructures","authors":"J. George","doi":"10.1109/ICMENS.2005.109","DOIUrl":"https://doi.org/10.1109/ICMENS.2005.109","url":null,"abstract":"Summary form only given. In the field of spintronics, GaMnAs, a ferromagnetic semiconductor, offers many advantages to study tunnel magnetotransport properties when used as an electrode. The complexity of the transport mechanisms associated with spin orbit coupled states make this material a powerful means for finding novel effects; also it provides new challenges for a theoretical understanding. This includes the tunnel magnetoresistance (TMR) across single or double barriers, tunneling anisotropic magnetoresistance (TAMR) and current induced magnetic switching (CIMS), as recently reported in such systems. I will discuss on the basis of magnetoresistance experiments with tunnel junctions the key elements to observe and understand such effects.","PeriodicalId":185824,"journal":{"name":"2005 International Conference on MEMS,NANO and Smart Systems","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129952089","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Dynamic deflection of electrostatic MEMS 静电MEMS的动态偏转
2005 International Conference on MEMS,NANO and Smart Systems Pub Date : 2005-07-24 DOI: 10.1109/ICMENS.2005.43
N. Ghoussoub, Yujin Guo
{"title":"Dynamic deflection of electrostatic MEMS","authors":"N. Ghoussoub, Yujin Guo","doi":"10.1109/ICMENS.2005.43","DOIUrl":"https://doi.org/10.1109/ICMENS.2005.43","url":null,"abstract":"An idealized electrostatic MEMS device, consisting of a thin dielectric elastic membrane supported above a rigid ground plate, is analyzed. The upper surface of the membrane is coated with a thin conducting film. When a voltage V is applied to the thin conducting film, the membrane deflects towards the ground plate and if V is increased beyond a critical value V* (the pull-in voltage), touchdown occurs at finite time creating a so-called \"pull-in instability\". The mathematical model lends to a nonlinear parabolic problem for the dynamic deflection of the thin dielectric membrane. By allowing for a spatially varying permittivity profile, it is shown that the pull-in instability can be delayed until larger values of V* and that greater pull-in distances can be achieved. Applying various analytical and numerical techniques, finite touchdown time and a refined description of MEMS touchdown behavior are also discussed.","PeriodicalId":185824,"journal":{"name":"2005 International Conference on MEMS,NANO and Smart Systems","volume":"134 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122770505","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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