Materials Science and Engineering B-advanced Functional Solid-state Materials最新文献

{"title":"Enhancing stability of double perovskite electrode by vanadium doping for symmetrical solid oxide cell","authors":"Ao Wang ,&nbsp;Gang Li ,&nbsp;Cheng Li ,&nbsp;Yujie Tang ,&nbsp;Dong Yan ,&nbsp;Jian Li ,&nbsp;Lichao Jia","doi":"10.1016/j.mseb.2024.117769","DOIUrl":"10.1016/j.mseb.2024.117769","url":null,"abstract":"<div><div>Using solid oxide cells to produce and utilize hydrogen is an effective method for addressing energy demands. In this study, vanadium (V) was doped into the B site of the La_0.3Sr_1.7Fe_1.3Ni_0.2Mo_0.5O_6-δ double perovskite, which served as the electrode material for symmetrical solid oxide cells. Doping with high-valence V⁴⁺/V⁵⁺ reduced both the average Fe valence state and the concentration of oxygen vacancies, while simultaneously decreasing the reducing activity of the material and enhancing its stability. After operating at 750 °C and ± 400 mA cm⁻² for 150 h, the degradation rates for Cell-LSFNM were 4.56 % and 8.32 %, respectively, while those for Cell-LSFVNM were only 0 % and 3.32 %, respectively. Although V doping slightly diminished the electrochemical performance of the single cell, it significantly improved long-term operational stability in solid oxide fuel/electrolysis cell (SOFC/SOEC) modes.</div></div>","PeriodicalId":18233,"journal":{"name":"Materials Science and Engineering B-advanced Functional Solid-state Materials","volume":"310 ","pages":"Article 117769"},"PeriodicalIF":3.9,"publicationDate":"2024-10-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142528324","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Investigation of the magnetocaloric properties of Bi doping in La0.7Ca0.27Na0.03Mn1-xBixO3 (x = 0.0, 0.005, 0.01 and 0.02) perovskites","authors":"Mehmet Selim Aslan,&nbsp;Gönül Akça,&nbsp;Selda Kılıç Çetin,&nbsp;Ahmet Ekicibil","doi":"10.1016/j.mseb.2024.117760","DOIUrl":"10.1016/j.mseb.2024.117760","url":null,"abstract":"<div><div>In the present study, the effects of Bi doping on the Mn-site of La_0.7Ca_0.27Na_0.03Mn_1-xBi_xO₃ perovskite manganites on their structural, magnetic, and magnetocaloric properties were investigated. From XRD analyses, the main La_0.7Ca_0.27Na_0.03MnO₃ manganite has a rhombohedral structure with space group <span><math><mrow><mi>R</mi><mover><mrow><mn>3</mn></mrow><mrow><mo>¯</mo></mrow></mover><mi>c</mi></mrow></math></span>. In contrast, manganites obtained by doping with x  = 0.005, 0.01, and 0.02 Bi were found to have an orthorhombic structure with space group <em>Pnma</em>. The Curie temperature (<em>T_C</em>) is 310, 246, 235, and 232 K for x  = 0.0, 0.005, 0.01 and 0.02, respectively. The maximum entropy change (<span><math><mrow><mo>-</mo><mi>Δ</mi><msubsup><mi>S</mi><mrow><mi>M</mi></mrow><mrow><mi>max</mi></mrow></msubsup><mrow><mo>)</mo></mrow></mrow></math></span> values were calculated as 6.34, 8.24, 8.33, and 8.42 Jkg^-1K⁻¹ for x  = 0.0, 0.005, 0.01 and 0.02, respectively. The highest Relative Cooling Power (RCP) value was computed as 271 Jkg⁻¹ for the sample with a Bi concentration of 0.01. It was determined from the <em>H/M</em> versus <em>M²</em> curves that all samples displayed a second-order magnetic phase transition.</div></div>","PeriodicalId":18233,"journal":{"name":"Materials Science and Engineering B-advanced Functional Solid-state Materials","volume":"310 ","pages":"Article 117760"},"PeriodicalIF":3.9,"publicationDate":"2024-10-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142528322","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Low-temperature fabrication of metal-organic-frameworks/TiO2 photoanode for flexible dye-sensitized solar cells","authors":"Jiarui Jin","doi":"10.1016/j.mseb.2024.117755","DOIUrl":"10.1016/j.mseb.2024.117755","url":null,"abstract":"<div><div>Metal-organic frameworks (MOFs) are utilized to integrate with TiO₂ to enhance the solar-to-electricity conversion efficiency. The porphyrin-based MOF PCN-222 is the focus of the study. The MOF/TiO₂ composite is deposited on a flexible ITO-PEN (polyethylene naphthalate) substrate under low-temperature (&lt;150 °C) conditions. The resulting flexible DSSC demonstrates faster electron diffusion and improved charge carrier separation ability, achieving an efficiency of 4.41 % under 100 mW cm⁻², AM 1.5 global illumination. In comparison to the traditional FTO-glass-based DSSC, this type of flexible DSSC shows great potential for application in wearable electronic devices.</div></div>","PeriodicalId":18233,"journal":{"name":"Materials Science and Engineering B-advanced Functional Solid-state Materials","volume":"310 ","pages":"Article 117755"},"PeriodicalIF":3.9,"publicationDate":"2024-10-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142528323","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Electromagnetic wave absorbing properties of Short carbon fiber/Bismaleimide foams Metamaterial","authors":"Lu Feng ,&nbsp;Shicheng Jin ,&nbsp;Wanchong Li ,&nbsp;Yan Wang ,&nbsp;Yu Mao","doi":"10.1016/j.mseb.2024.117730","DOIUrl":"10.1016/j.mseb.2024.117730","url":null,"abstract":"<div><div>The development of broadband electromagnetic wave absorbing materials often faces challenges due to constraints such as thickness and mechanical integrity. To address these issues, this study has engineered and fabricated a Short Carbon Fiber (SCF)/Bismaleimide (BMI) foam Metamaterial (MM). This composite is composed of a crosshatch metal pattern, reinforced with glass fiber plastic (GFRP), and a BMI foam matrix infused with SCF as a functional filler. The electromagnetic field distribution and input impedance analysis indicate that the crosshatch metal pattern is adept at modulating the impedance of the SCF/BMI foam, thereby influencing the field distribution. This material demonstrates superior absorption characteristics, with reflectivity levels below −10 dB across the 5–18 GHz frequency range, achieved with a mere 4.7 mm thickness. Moreover, the designed material maintains outstanding performance even under oblique incidence, and it exhibits commendable thermal stability and mechanical robustness. The findings suggest that the proposed SCF/BMI foam MM has promising potential for applications in radar stealth technology for various targets.</div></div>","PeriodicalId":18233,"journal":{"name":"Materials Science and Engineering B-advanced Functional Solid-state Materials","volume":"310 ","pages":"Article 117730"},"PeriodicalIF":3.9,"publicationDate":"2024-10-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142528321","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Tuning optoelectronic and thermoelectric attributes of Na2GeX6 (X = Br, Cl) halide double perovskites for high-efficiency solar cells applications","authors":"Anjali Kumari ,&nbsp;Aparna Dixit ,&nbsp;Jisha Annie Abraham ,&nbsp;Mumtaz Manzoor ,&nbsp;Abhinav Kumar ,&nbsp;Mohammad Khalid Parvez ,&nbsp;Yedluri Anil Kumar ,&nbsp;Abhishek Kumar Mishra ,&nbsp;Ramesh Sharma","doi":"10.1016/j.mseb.2024.117761","DOIUrl":"10.1016/j.mseb.2024.117761","url":null,"abstract":"<div><div>In this study, by implementing Full Potential augmented plane −wave (FP-LAPW) method employed in density functional theory (DFT), we computed the structural, electronic, optical, thermoelectric and elastic properties of two novel double perovskites halides Na₂GeX₆(X = Cl, Br). We confirmed the ground state energy and stability of these compounds by computing the cohesive and formation energies. Using the Tran Blaha modified Becke Johnson approximation and generalized gradient approximations (TB-mBJ-GGA and PBE-GGA), the electronic band structure and density of states plots of these compounds reveal their semiconducting nature. The Perdew-Burke-Ernzerhof generalized gradient approximation reveals a direct band-gap of (0.943) for Na₂GeCl₆ and a metallic character for Na₂GeBr₆ respectively. However, for Na₂GeCl₆ band-gap value of (3.351) with TB-mBJ, direct-bandgap value of (1.423 eV) for Na₂GeBr₆. The optical properties are also computed for both the compounds. The compounds show large absorption coefficient values in visible and UV regions, showing promising optoelectronic properties. Moreover, the transport properties were calculated using BoltzTrap code, which discussed about the thermoelectric behavior of the compounds.</div></div>","PeriodicalId":18233,"journal":{"name":"Materials Science and Engineering B-advanced Functional Solid-state Materials","volume":"310 ","pages":"Article 117761"},"PeriodicalIF":3.9,"publicationDate":"2024-10-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142528320","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Enhanced SiC/NFG/Ni ternary composite microwave absorbing materials with micro-network structures produced by selective laser sintering","authors":"Haihua Wu ,&nbsp;Shixiong Deng ,&nbsp;Kaixin Deng ,&nbsp;Jiantang Jiang ,&nbsp;Shaokang Liu ,&nbsp;Bin Chao ,&nbsp;Shiyu Zeng ,&nbsp;Liang Gong ,&nbsp;Mingmin Liu","doi":"10.1016/j.mseb.2024.117758","DOIUrl":"10.1016/j.mseb.2024.117758","url":null,"abstract":"<div><div>In this paper, a ternary composite wave-absorbing material consisting of silicon carbide (SiC), natural flake graphite (NFG) and nickel (Ni) has been successfully fabricated through a combined process of selective laser sintering (SLS) and vacuum pressure impregnation. The study investigated how the content of SiC powder affected the absorption capacity and mechanical performances of the composites. The findings indicate that as the proportion of SiC powder rises, the porosity of the composites diminishes, while the bending strength increases. As the content of SiC is 40 wt%, the porosity is 52.14 % and the flexure strength is 9.58 MPa, approximately five times greater than that of graphite-type ceramic preforms. The composite’s electromagnetic wave-absorbing capability initially improves and then declines with the increase of SiC content. When the SiC content is 10 wt% and the thickness is 1.5 mm, the composite absorbing material exhibits optimal electromagnetic absorption performance, with a minimum reflection loss (RL_min)of −44.04 dB and an effective absorption bandwidth (EAB) of 5.42 GHz (8.24–13.66 GHz). The composite material, characterized by its lightweight, high strength, and broad frequency range, shows promise for applications in microwave absorption technology.</div></div>","PeriodicalId":18233,"journal":{"name":"Materials Science and Engineering B-advanced Functional Solid-state Materials","volume":"310 ","pages":"Article 117758"},"PeriodicalIF":3.9,"publicationDate":"2024-10-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142444989","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Electrical and structural investigation of Pt/n-type GaN Schottky contacts: The possible origin of inhomogeneous barrier","authors":"Mohammed Mamor ,&nbsp;Marie Pierre Chauvat ,&nbsp;Pierre Ruterana","doi":"10.1016/j.mseb.2024.117756","DOIUrl":"10.1016/j.mseb.2024.117756","url":null,"abstract":"<div><div>An ideal metal/GaN interface is not usually possible and the surface states are often present at such interface and therefore affect the Schottky barrier diode (SBD) performance. In this work the interface states in Pt/n-type GaN SBD were extracted using temperature dependent forward current–voltage (<em>I</em>-<em>V</em>-<em>T</em>) characteristics over a large temperature range (80–400 K). The energy profile distribution of the density of interface states <em>N</em>_SS (<em>E</em>) and its dependence on the temperature were determined from the bias and temperature dependence of the measured effective barrier height <span><math><mrow><msub><mrow><mi>Ф</mi></mrow><mrow><mn>0</mn><mi>b</mi><mi>n</mi></mrow></msub><mo>(</mo><mi>V</mi><mo>,</mo><mi>T</mi><mo>)</mo></mrow></math></span> and ideality factor <em>n</em> (<em>V</em>, <em>T</em>). It is shown that the interface states density at room temperature decreases with increasing energy with respect to the conduction band. It is shown that the effective Schottky barrier height (SBH) and ideality factor are correlated to the density of interface states. This result suggests that interface states density contributes to barrier inhomogeneities in Pt/n-type GaN SBD. Fourier transform deep level transient spectroscopy (FT-DLTS) has been employed to extract qualitative information about the native defects present in as-grown n-type GaN. From FT-DLTS, two prominent native defects D₂ and D₃ were observed in GaN. The defect D₂ located at <em>E</em>_C- 0.56 eV could be associated with impurity at Ga site. The defect D₃ located at <em>E</em>_C- 0.26 eV has been assigned to nitrogen-related energy level. These native defects are interpreted as responsible of the existence of interface states and then to the barrier inhomogeneities at Pt/n-type GaN contacts. Furthermore, other possible origins of the interface states at Pt/n-type GaN interface are discussed in terms of the threading dislocations inside the GaN templates that reach the surface and other possible irregularities at this interface.</div></div>","PeriodicalId":18233,"journal":{"name":"Materials Science and Engineering B-advanced Functional Solid-state Materials","volume":"310 ","pages":"Article 117756"},"PeriodicalIF":3.9,"publicationDate":"2024-10-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142444987","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Spectral characteristics and luminescence applications of Eu3+-activated fluorosilicate Na2MgGd2[SiO3]4F2","authors":"Suyin Zhang,&nbsp;Qinhua Wei,&nbsp;Hang Yin,&nbsp;Gao Tang,&nbsp;Laishun Qin","doi":"10.1016/j.mseb.2024.117763","DOIUrl":"10.1016/j.mseb.2024.117763","url":null,"abstract":"<div><div>This work reports the luminescence spectra and application of novel Eu³⁺-doped Na₂MgGd₂[SiO₃]₄F₂ phosphor. The X-ray powder diffraction confirmed the pure phase formation of the samples with the monoclinic space group <em>P</em>2₁/c (No:14). The phosphors demonstrated efficient red emission at 613 nm from the electric dipole transitions ⁵D₀→⁷F₂. The optimal doping concentration was found to be approximately 25 mol%. Na₂MgGd₂[SiO₃]₄F₂:0.25Eu³⁺ exhibits a high quantum efficiency (QE) of 57 % with excellent thermal stability and pure chromaticity. Red- and the white light-emitting diode devices were packaged using InGaN chips and Na₂MgGd₂[SiO₃]₄F₂:0.25Eu³⁺. The fabricated WLED has CIE coordinates of (<em>x</em> = 0.33, y = 0.34), which are very close to the white point in the National Television System Committee (<em>x</em> = 0.33, <em>y</em> = 0.33). The color rendering index (CRI, Ra) and correlated color temperature (CCT) of the WLED are 91 and 4400 K, respectively. The results show that as a red luminescent phosphor, it is a potential candidate for the preparation of near-UV/blue InGaN-based WLEDs.</div></div>","PeriodicalId":18233,"journal":{"name":"Materials Science and Engineering B-advanced Functional Solid-state Materials","volume":"310 ","pages":"Article 117763"},"PeriodicalIF":3.9,"publicationDate":"2024-10-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142444988","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Doped diamane: An efficient electron/hole collection layer in HIT solar cell","authors":"Naima,&nbsp;Pawan K. Tyagi,&nbsp;Vinod Singh","doi":"10.1016/j.mseb.2024.117754","DOIUrl":"10.1016/j.mseb.2024.117754","url":null,"abstract":"<div><div>In this report, the optimization of various parameters of electron/hole collection layer, buffer layer and active layer of the HIT solar cell have been carried out by using AFORS-HET software. Novelty of the reported work is the use of doped diamane as an effective electron/hole collection layers for the enhanced performance of the HIT solar cell. Here, n and p-type diamane layers are used as the electron/hole collection layers or the emitter and back surface field (BSF) layer, respectively. Considering the absorption loss at the front contact, the maximum efficiency (η) for the fully optimized cell is found 27.88 % with open circuit voltage (V_OC) 691.1 mV, current density (J_SC) 49.3 mA/<span><math><msup><mtext>cm</mtext><mn>2</mn></msup></math></span> and fill factor (FF) 81.83 % whereas, in conventional HIT cell with η of 25.6 % and J_SC of 41.8 mA/cm² reported by Masuko et. al. <span><span>[7]</span></span>. If zero absorption loss is considered, the efficiency could exceed its theoretical limit. A detailed study has also been done on the role of texturing angle and absorption loss found at the front contact of the<!--> <!-->solar cell.</div></div>","PeriodicalId":18233,"journal":{"name":"Materials Science and Engineering B-advanced Functional Solid-state Materials","volume":"310 ","pages":"Article 117754"},"PeriodicalIF":3.9,"publicationDate":"2024-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142433155","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Preparation of AgBiS2 powder and its photocatalytic performance","authors":"Wenzhen Wang ,&nbsp;Sirui Bao ,&nbsp;Chengxiong Gao ,&nbsp;Taocheng Huang ,&nbsp;Yan Zhu ,&nbsp;Run Xu","doi":"10.1016/j.mseb.2024.117739","DOIUrl":"10.1016/j.mseb.2024.117739","url":null,"abstract":"<div><div>The ternary chalcogenide compound AgBiS₂ has garnered significant attention from researchers due to its unique properties. It has the characteristics of adjustable bandgap, high absorption coefficient, good environmental stability, and easy processing. The methods for the preparation of AgBiS₂ powder are mainly focused on chemical methods, with silver nitrate commonly used as the silver source despite its toxic nature and harmful impact on health and the environment. In this paper, AgBiS₂ powder was prepared by the solvothermal method using silver acetate, and the prepared powder samples were used to simulate the photocatalytic degradation of methylene blue (MB) solution under sunlight irradiation to explore its photocatalytic degradation efficiency. The prepared AgBiS₂ powder mainly exists in two forms: nanorods with a length of more than 5 μm and nanoparticles with a diameter of about 200 nm, and the topography changes with temperature. The morphology of AgBiS₂ grown at 160 °C was similar to that of tabular accumulation, and when grown at 180 °C, small AgBiS₂ particles accumulate on larger plates. The degradation efficiency of AgBiS₂ powder reached 44.38 % after 4 h of photocatalytic degradation, which was three times higher than that of the blank sample. The reaction rate constant is 0.0024, which is much higher than that of the blank sample. Therefore, AgBiS₂ powder has great potential in photocatalytic degradation and is expected to be an efficient photocatalyst.</div></div>","PeriodicalId":18233,"journal":{"name":"Materials Science and Engineering B-advanced Functional Solid-state Materials","volume":"310 ","pages":"Article 117739"},"PeriodicalIF":3.9,"publicationDate":"2024-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142433154","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}