Yuxin Wang , Yuhang Xu , Shiyan Zeng , Jinxiu Liu , Minmin Zhao , Chao Tan , Zegao Wang
{"title":"Observation of large interlayer magnetoresistance in CVD-grown PtSe2 single-crystal flakes","authors":"Yuxin Wang , Yuhang Xu , Shiyan Zeng , Jinxiu Liu , Minmin Zhao , Chao Tan , Zegao Wang","doi":"10.1016/j.mseb.2025.118559","DOIUrl":null,"url":null,"abstract":"<div><div>As an emerging two-dimensional transition metal dichalcogenides (2D TMDCs), platinum diselenide (PtSe<sub>2</sub>) has excellent properties such as narrow band gap and high carrier mobility, redering it an ideal candidate for spintronic devices. However, magnetic studies are still in their infancy for PtSe<sub>2</sub> single-crystal flakes grown by chemical vapour deposition (CVD). Herein, Observation of significant interlayer magnetoresistance (MR) in 2H-PtSe<sub>2</sub> single-crystal flakes grown by CVD is reported. By analyzing the magnetic transport properties at low temperatures, both PtSe<sub>2</sub> flakes with thicknesses of 23 nm and 141 nm exhibit butterfly-shaped hysteresis, confirming the ferromagnetic properties of 2H-PtSe<sub>2</sub>. The 23 nm-PtSe<sub>2</sub> exhibits a higher maximum |MR| ratio of 2.62 % compared to 141 nm-PtSe<sub>2</sub> at 5 K, indicating that the magnetism has a more significant effect on the magnetoresistance of PtSe<sub>2</sub> with less layers. This phenomenon is similar to that observed in-plane, suggesting that the magnetic modulation of the intra-layer resistance in PtSe<sub>2</sub> is comparable to that of the inter-layer resistance. This study reveals the thickness magnetic properties of CVD-synthesised 2H-PtSe<sub>2</sub> and will provide richer theories and insights for future studies of PtSe<sub>2</sub>-based spintronic devices.</div></div>","PeriodicalId":18233,"journal":{"name":"Materials Science and Engineering: B","volume":"321 ","pages":"Article 118559"},"PeriodicalIF":3.9000,"publicationDate":"2025-06-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Science and Engineering: B","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0921510725005835","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
As an emerging two-dimensional transition metal dichalcogenides (2D TMDCs), platinum diselenide (PtSe2) has excellent properties such as narrow band gap and high carrier mobility, redering it an ideal candidate for spintronic devices. However, magnetic studies are still in their infancy for PtSe2 single-crystal flakes grown by chemical vapour deposition (CVD). Herein, Observation of significant interlayer magnetoresistance (MR) in 2H-PtSe2 single-crystal flakes grown by CVD is reported. By analyzing the magnetic transport properties at low temperatures, both PtSe2 flakes with thicknesses of 23 nm and 141 nm exhibit butterfly-shaped hysteresis, confirming the ferromagnetic properties of 2H-PtSe2. The 23 nm-PtSe2 exhibits a higher maximum |MR| ratio of 2.62 % compared to 141 nm-PtSe2 at 5 K, indicating that the magnetism has a more significant effect on the magnetoresistance of PtSe2 with less layers. This phenomenon is similar to that observed in-plane, suggesting that the magnetic modulation of the intra-layer resistance in PtSe2 is comparable to that of the inter-layer resistance. This study reveals the thickness magnetic properties of CVD-synthesised 2H-PtSe2 and will provide richer theories and insights for future studies of PtSe2-based spintronic devices.
期刊介绍:
The journal provides an international medium for the publication of theoretical and experimental studies and reviews related to the electronic, electrochemical, ionic, magnetic, optical, and biosensing properties of solid state materials in bulk, thin film and particulate forms. Papers dealing with synthesis, processing, characterization, structure, physical properties and computational aspects of nano-crystalline, crystalline, amorphous and glassy forms of ceramics, semiconductors, layered insertion compounds, low-dimensional compounds and systems, fast-ion conductors, polymers and dielectrics are viewed as suitable for publication. Articles focused on nano-structured aspects of these advanced solid-state materials will also be considered suitable.