2020 International Symposium on Devices, Circuits and Systems (ISDCS)最新文献_第2页

DFT Based Simulation for Predicting Alcohol Adsorption on Oxygenated Functional Group Containing GO and rGO Based Gas Sensor Devices 基于DFT的含氧化石墨烯官能团和氧化还原石墨烯气体传感器装置对酒精吸附预测模拟

2020 International Symposium on Devices, Circuits and Systems (ISDCS) Pub Date : 2020-03-04 DOI: 10.1109/ISDCS49393.2020.9262983

I. Maity, H. Rahaman, P. Bhattacharyya

{"title":"DFT Based Simulation for Predicting Alcohol Adsorption on Oxygenated Functional Group Containing GO and rGO Based Gas Sensor Devices","authors":"I. Maity, H. Rahaman, P. Bhattacharyya","doi":"10.1109/ISDCS49393.2020.9262983","DOIUrl":"https://doi.org/10.1109/ISDCS49393.2020.9262983","url":null,"abstract":"This paper predicts the adsorption probability (sensitivity performance) of various alcohol vapors in graphene oxide (GO) and reduced graphene oxide (rGO) based gas sensor devices, where the role of oxygen containing functional groups of GO and rGO like, epoxy, carbonyl, carboxyl, hydroxyl (sp2 hybridized) and hydroxyl (sp3 hybridized) were investigated for physisorption of methanol and ethanol with the help of first principle calculation (density functional theory (DFT)) employing Atomistix Toolkit QuantumATK (version: P_2019.03-SP1). Among the above mentioned oxygenated functional groups, carbonyl, carboxyl and sp2 hybridized hydroxyl groups were placed at the edges of the GO and rGO basal plane, however epoxy and sp3 hybridized hydroxyl groups were placed vertically to that basal plane. For the considered test species (methanol and ethanol), the optimal positions for gas adsorption onto the oxygenated functional groups, favorable adsorption energy value and charge transfer capacity were calculated for the above stated two planes, separately. It was observed that among the other functional groups, edge carbonyl group showed better adsorption probability with respect to minimum adsorption distance, favorable adsorption energy and charge transfer efficiency towards methanol and ethanol. However, the better sensitivity and selectivity performance was found towards methanol compared to that of ethanol in GO and rGO based gas sensor devices.","PeriodicalId":177307,"journal":{"name":"2020 International Symposium on Devices, Circuits and Systems (ISDCS)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127233203","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

A Short Review on Graphene Nanoribbon Interconnect 石墨烯纳米带互连技术综述

2020 International Symposium on Devices, Circuits and Systems (ISDCS) Pub Date : 2020-03-04 DOI: 10.1109/ISDCS49393.2020.9263018

Subhajit Das, S. Bhattacharya, Debaprasad Das, H. Rahaman

{"title":"A Short Review on Graphene Nanoribbon Interconnect","authors":"Subhajit Das, S. Bhattacharya, Debaprasad Das, H. Rahaman","doi":"10.1109/ISDCS49393.2020.9263018","DOIUrl":"https://doi.org/10.1109/ISDCS49393.2020.9263018","url":null,"abstract":"On-chip VLSI interconnects is considered very promising area in the field of IC design in recent years. The delay of interconnect system becomes pre-dominant than the on-chip transistor gate delay in ultra large scale integration due to the substantial parasitic effects. Further the increase in Joule heating and significant increase of grain boundary scattering posed a harsh challenge for future technologies. Subsequently the VLSI industry started a searching the alternative of conventional copper interconnect to get rid of these issues. Here the surprise innovation, graphene, came in picture. Graphene is the material with high electron mobility and high mean free path, so the high current density and lowest resistivity. For interconnect application, due to lower resistivity, graphene nano ribbon (GNR), further multi-layer GNR (MLGNR) has been considered to the most suitable for nano-interconnect application. Further intercalation doping improves the conductivity for MLGNR interconnect. This article demonstrates the basic structural properties and depicts the electrical models of single and multi-layer and intercalation doped GNR. A preliminary discussion on production methods for structuring pristine and intercalated GNR interconnect has also been discussed in this article.","PeriodicalId":177307,"journal":{"name":"2020 International Symposium on Devices, Circuits and Systems (ISDCS)","volume":"72 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126349834","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Electrically isolated buried electrode biosensor for detecting folic acid concentration 用于检测叶酸浓度的电隔离埋极生物传感器

2020 International Symposium on Devices, Circuits and Systems (ISDCS) Pub Date : 2020-03-04 DOI: 10.1109/ISDCS49393.2020.9263023

Alivia Basak, S. Chakraborty, Chirantan Das, A. Mukherjee, R. Saha, A. Karmakar, S. Chattopadhyay

引用次数: 0

Fault-tolerant Quantum Implementation of Priority Encoder Circuit using Clifford+T-group 基于Clifford+ t群的优先编码器电路容错量子实现

2020 International Symposium on Devices, Circuits and Systems (ISDCS) Pub Date : 2020-03-04 DOI: 10.1109/ISDCS49393.2020.9263017

L. Biswal, Khokan Mondal, A. Bhattacharjee, H. Rahaman

引用次数: 1

One-pass Synthesis for Digital Microfluidic Biochips: A Survey 数字微流控生物芯片的一次合成研究进展

2020 International Symposium on Devices, Circuits and Systems (ISDCS) Pub Date : 2020-03-04 DOI: 10.1109/ISDCS49393.2020.9263007

Oliver Keszöcze, R. Wille, R. Drechsler

引用次数: 0

Carrier Dynamics in Lightly-doped Resistance Region in Power MOSFETs 功率mosfet中轻掺杂电阻区的载流子动力学

2020 International Symposium on Devices, Circuits and Systems (ISDCS) Pub Date : 2020-03-04 DOI: 10.1109/ISDCS49393.2020.9262988

T. Iizuka

{"title":"Carrier Dynamics in Lightly-doped Resistance Region in Power MOSFETs","authors":"T. Iizuka","doi":"10.1109/ISDCS49393.2020.9262988","DOIUrl":"https://doi.org/10.1109/ISDCS49393.2020.9262988","url":null,"abstract":"Two-dimensional current flow in the lightly-doped resistive region in a lateral double-diffused MOS (LDMOS) transistor was analyzed through 2D device simulation. While retaining its theoretical backbone of HiSIM_HV, the industry-standard surface-potential-based compact model for high-voltage MOSFETs, a conceptual extension is explored. Owing to a smooth transit of current flowlines from the channel to the lightly doped region adjacent to the channel of the intrinsic MOSFET part of LDMOS, the surface accumulation occurring at the gate-overlapped surface of the lightly doped resistive region is regarded as an extended channel rather than an extended drain. The channel offset length (ΔL) can be expressed within the framework of the drift-diffusion model and can be related with a characteristic quasi-Fermi voltage Vdive where accumulation current flowlines have already completely dived away from the surface. The HiSIM_HV’s internal drain node (DP or alternatively d’) is regarded as being placed at an opening bounded by the gate-controlled transverse and the drain-controlled lateral extension of depletion region, while many compact models place DP at the boundary between the channel and the lightly doped region. The intrinsic MOSFET’s effective drain voltage (Vdseff) is related to gate controlled Vdive rather than the quasi-Fermi voltage (Vdp) at DP. Hence, a difficulty in that the intrinsic MOSFET’s drain voltage stays almost as high as externally applied drain voltage at the off-state, while it suddenly drops at the onset of on-state of the intrinsic MOSFET part is expected to be mitigated.","PeriodicalId":177307,"journal":{"name":"2020 International Symposium on Devices, Circuits and Systems (ISDCS)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133016402","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

NoCSNN: A Scalable Interconnect Architecture for Neuromorphic Computing Systems 神经形态计算系统的可扩展互连体系结构

2020 International Symposium on Devices, Circuits and Systems (ISDCS) Pub Date : 2020-03-04 DOI: 10.1109/ISDCS49393.2020.9263025

Ayut Ghosh, Aneek Jash, Ramapati Patra, Hemanta Kumar Mondal

引用次数: 1

A Harmonic-Based Method of Fault Detection During Power Swing 基于谐波的电力摆幅故障检测方法

2020 International Symposium on Devices, Circuits and Systems (ISDCS) Pub Date : 2020-03-04 DOI: 10.1109/ISDCS49393.2020.9262973

Debanjan Dhara, B. K. Roy

引用次数: 0

An Efficient Test Scheduling to Co-optimize Test Time and Peak Power for 3D ICs 3D集成电路测试时间和峰值功率协同优化的有效测试调度

2020 International Symposium on Devices, Circuits and Systems (ISDCS) Pub Date : 2020-03-04 DOI: 10.1109/ISDCS49393.2020.9263015

Subhajit Chatterjee, S. Roy, C. Giri, H. Rahaman

引用次数: 1

ISDCS 2020 Cover Page ISDCS 2020封面

2020 International Symposium on Devices, Circuits and Systems (ISDCS) Pub Date : 2020-03-04 DOI: 10.1109/isdcs49393.2020.9262989

引用次数: 0