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Journal of Vacuum Science & Technology B最新文献

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Fabrication of sub-micrometer 3D structures for terahertz oscillators by electron beam gray-tone lithography 电子束灰调光刻技术制备太赫兹振荡器亚微米三维结构
IF 1.4 4区 工程技术
Journal of Vacuum Science & Technology B Pub Date : 2022-03-01 DOI: 10.1116/6.0001647
M. Bezhko, S. Suzuki, Shota Iino, M. Asada
{"title":"Fabrication of sub-micrometer 3D structures for terahertz oscillators by electron beam gray-tone lithography","authors":"M. Bezhko, S. Suzuki, Shota Iino, M. Asada","doi":"10.1116/6.0001647","DOIUrl":"https://doi.org/10.1116/6.0001647","url":null,"abstract":"","PeriodicalId":17495,"journal":{"name":"Journal of Vacuum Science & Technology B","volume":"82 1","pages":""},"PeriodicalIF":1.4,"publicationDate":"2022-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73793477","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Effective polymerization technique for plasma-treated multiwalled carbon nanotubes to maximize wear resistance of composite polyurethane 等离子体处理多壁碳纳米管的有效聚合技术使复合聚氨酯的耐磨性最大化
IF 1.4 4区 工程技术
Journal of Vacuum Science & Technology B Pub Date : 2022-03-01 DOI: 10.1116/6.0001390
D. Ogawa, Seira Morimune-Moriya, Keiji Nakamura
{"title":"Effective polymerization technique for plasma-treated multiwalled carbon nanotubes to maximize wear resistance of composite polyurethane","authors":"D. Ogawa, Seira Morimune-Moriya, Keiji Nakamura","doi":"10.1116/6.0001390","DOIUrl":"https://doi.org/10.1116/6.0001390","url":null,"abstract":"","PeriodicalId":17495,"journal":{"name":"Journal of Vacuum Science & Technology B","volume":"147 1","pages":""},"PeriodicalIF":1.4,"publicationDate":"2022-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81904426","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Molecular dynamics study of silicon atomic layer etching by chorine gas and argon ions 氯气和氩离子刻蚀硅原子层的分子动力学研究
IF 1.4 4区 工程技术
Journal of Vacuum Science & Technology B Pub Date : 2022-03-01 DOI: 10.1116/6.0001681
Joseph R. Vella, D. Humbird, D. Graves
{"title":"Molecular dynamics study of silicon atomic layer etching by chorine gas and argon ions","authors":"Joseph R. Vella, D. Humbird, D. Graves","doi":"10.1116/6.0001681","DOIUrl":"https://doi.org/10.1116/6.0001681","url":null,"abstract":"","PeriodicalId":17495,"journal":{"name":"Journal of Vacuum Science & Technology B","volume":"71 1","pages":""},"PeriodicalIF":1.4,"publicationDate":"2022-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74296604","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Fabrication of black GaAs by maskless inductively coupled plasma etching in Cl2/BCl3/O2/Ar chemistry Cl2/BCl3/O2/Ar化学中无掩膜电感耦合等离子体刻蚀制备黑色砷化镓
IF 1.4 4区 工程技术
Journal of Vacuum Science & Technology B Pub Date : 2022-03-01 DOI: 10.1116/6.0001570
Yidi Bao, Wen Liu, Yongqiang Zhao, Lei Wei, Xiaoling Chen, Fuhua Yang, Xiaodong Wang
{"title":"Fabrication of black GaAs by maskless inductively coupled plasma etching in Cl2/BCl3/O2/Ar chemistry","authors":"Yidi Bao, Wen Liu, Yongqiang Zhao, Lei Wei, Xiaoling Chen, Fuhua Yang, Xiaodong Wang","doi":"10.1116/6.0001570","DOIUrl":"https://doi.org/10.1116/6.0001570","url":null,"abstract":"","PeriodicalId":17495,"journal":{"name":"Journal of Vacuum Science & Technology B","volume":"72 1","pages":""},"PeriodicalIF":1.4,"publicationDate":"2022-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88319613","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
All field emission models are wrong, … but are any of them useful? 所有的场发射模型都是错误的，但其中有有用的吗?
IF 1.4 4区 工程技术
Journal of Vacuum Science & Technology B Pub Date : 2022-02-22 DOI: 10.1116/6.0001677
A. Ayari, P. Vincent, S. Perisanu, P. Poncharal, S. Purcell
{"title":"All field emission models are wrong, … but are any of them useful?","authors":"A. Ayari, P. Vincent, S. Perisanu, P. Poncharal, S. Purcell","doi":"10.1116/6.0001677","DOIUrl":"https://doi.org/10.1116/6.0001677","url":null,"abstract":"Field emission data are often represented on a Fowler-Nordheim plot, but a new empirical equation has been recently proposed to better analyse experiments. Such an equation is based on approximations of the Murphy and Good model and predicts that a constant parameter κ , depending only on the work function of the emitter, can be extracted from the data. We compared this empirical equation with simulations of the Murphy and Good model in order to determine the range of validity of the approximations and the robustness of the relationship between κ and the work function. We found that κ is constant only over a limited range of electric fields and so depends significantly on the field enhancement factor. This result calls into question the usefulness of the new empirical equation.","PeriodicalId":17495,"journal":{"name":"Journal of Vacuum Science & Technology B","volume":"40 1","pages":""},"PeriodicalIF":1.4,"publicationDate":"2022-02-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81522830","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Thermochemical prediction of runaway energetic reactions involving organometallic (Al, In) and silane precursors in deposition tools 沉积工具中涉及有机金属(Al, In)和硅烷前体的失控高能反应的热化学预测
IF 1.4 4区 工程技术
Journal of Vacuum Science & Technology B Pub Date : 2022-01-01 DOI: 10.1116/6.0001503
Yi-Ching Liu, Norleakvisoth Lim, Taylor W. Smith, X. Sang, Jane P. Chang
{"title":"Thermochemical prediction of runaway energetic reactions involving organometallic (Al, In) and silane precursors in deposition tools","authors":"Yi-Ching Liu, Norleakvisoth Lim, Taylor W. Smith, X. Sang, Jane P. Chang","doi":"10.1116/6.0001503","DOIUrl":"https://doi.org/10.1116/6.0001503","url":null,"abstract":"","PeriodicalId":17495,"journal":{"name":"Journal of Vacuum Science & Technology B","volume":"112 1","pages":""},"PeriodicalIF":1.4,"publicationDate":"2022-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73701730","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Origin of the current saturation level of p-doped silicon field emitters 掺磷硅场发射体电流饱和水平的来源
IF 1.4 4区 工程技术
Journal of Vacuum Science & Technology B Pub Date : 2022-01-01 DOI: 10.1116/6.0001554
S. Edler, A. Schels, F. Herdl, W. Hansch, M. Bachmann, Markus Dudeck, F. Düsberg, A. Pahlke, M. Hausladen, P. Buchner, R. Schreiner
{"title":"Origin of the current saturation level of p-doped silicon field emitters","authors":"S. Edler, A. Schels, F. Herdl, W. Hansch, M. Bachmann, Markus Dudeck, F. Düsberg, A. Pahlke, M. Hausladen, P. Buchner, R. Schreiner","doi":"10.1116/6.0001554","DOIUrl":"https://doi.org/10.1116/6.0001554","url":null,"abstract":"","PeriodicalId":17495,"journal":{"name":"Journal of Vacuum Science & Technology B","volume":"84 1","pages":""},"PeriodicalIF":1.4,"publicationDate":"2022-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78204999","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Fundamental study on the selective etching of SiGe and Si in ClF3 gas for nanosheet gate-all-around transistor manufacturing: A first principle study 在ClF3气体中选择性蚀刻SiGe和Si用于纳米片栅全能晶体管的基础研究:第一性原理研究
IF 1.4 4区 工程技术
Journal of Vacuum Science & Technology B Pub Date : 2022-01-01 DOI: 10.1116/6.0001455
Yu-Hao Tsai, Mingmei Wang
{"title":"Fundamental study on the selective etching of SiGe and Si in ClF3 gas for nanosheet gate-all-around transistor manufacturing: A first principle study","authors":"Yu-Hao Tsai, Mingmei Wang","doi":"10.1116/6.0001455","DOIUrl":"https://doi.org/10.1116/6.0001455","url":null,"abstract":"","PeriodicalId":17495,"journal":{"name":"Journal of Vacuum Science & Technology B","volume":"16 1","pages":""},"PeriodicalIF":1.4,"publicationDate":"2022-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86105406","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Technology and measurements of three-layer NiFeCuMo/Ti/NiFeCuMo structures exhibiting the giant magnetoresistance phenomenon 显示巨磁阻现象的三层NiFeCuMo/Ti/NiFeCuMo结构的技术和测量
IF 1.4 4区 工程技术
Journal of Vacuum Science & Technology B Pub Date : 2022-01-01 DOI: 10.1116/6.0001488
K. Czarnacka, Jakub Kisała, A. Kociubiński, M. Gęca
{"title":"Technology and measurements of three-layer NiFeCuMo/Ti/NiFeCuMo structures exhibiting the giant magnetoresistance phenomenon","authors":"K. Czarnacka, Jakub Kisała, A. Kociubiński, M. Gęca","doi":"10.1116/6.0001488","DOIUrl":"https://doi.org/10.1116/6.0001488","url":null,"abstract":"","PeriodicalId":17495,"journal":{"name":"Journal of Vacuum Science & Technology B","volume":"10 1","pages":""},"PeriodicalIF":1.4,"publicationDate":"2022-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80790046","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Formation of ideally ordered porous Ga oxide by anodization of pretextured Ga 预构化镓阳极氧化制备理想有序多孔氧化镓
IF 1.4 4区 工程技术
Journal of Vacuum Science & Technology B Pub Date : 2022-01-01 DOI: 10.1116/6.0001619
T. Kondo, Yusuke Kuroda, Tomoki Shichijo, T. Yanagishita, H. Masuda
{"title":"Formation of ideally ordered porous Ga oxide by anodization of pretextured Ga","authors":"T. Kondo, Yusuke Kuroda, Tomoki Shichijo, T. Yanagishita, H. Masuda","doi":"10.1116/6.0001619","DOIUrl":"https://doi.org/10.1116/6.0001619","url":null,"abstract":"","PeriodicalId":17495,"journal":{"name":"Journal of Vacuum Science & Technology B","volume":"74 1","pages":""},"PeriodicalIF":1.4,"publicationDate":"2022-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84372676","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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