Molecular dynamics study of silicon atomic layer etching by chorine gas and argon ions

IF 1.4 4区工程技术

Journal of Vacuum Science & Technology B Pub Date : 2022-03-01 DOI:10.1116/6.0001681

Joseph R. Vella, D. Humbird, D. Graves

引用次数: 7

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氯气和氩离子刻蚀硅原子层的分子动力学研究

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Journal of Vacuum Science & Technology B 工程技术-工程：电子与电气

自引率

14.30%

发文量

审稿时长

2.5 months

期刊介绍： Journal of Vacuum Science & Technology B emphasizes processing, measurement and phenomena associated with micrometer and nanometer structures and devices. Processing may include vacuum processing, plasma processing and microlithography among others, while measurement refers to a wide range of materials and device characterization methods for understanding the physics and chemistry of submicron and nanometer structures and devices.