2017 18th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)最新文献

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Prognostics and health monitoring of electronic system: A review 电子系统的预测与健康监测:综述
A. Prisacaru, P. Gromala, M. Jeronimo, B. Han, Guo Qi Zhang
{"title":"Prognostics and health monitoring of electronic system: A review","authors":"A. Prisacaru, P. Gromala, M. Jeronimo, B. Han, Guo Qi Zhang","doi":"10.1109/EUROSIME.2017.7926248","DOIUrl":"https://doi.org/10.1109/EUROSIME.2017.7926248","url":null,"abstract":"Miniaturization of electronics, reduction of time to market and new functionalities in the current context of autonomous driving, electrification and connectivity, are bringing new reliability challenges. Prognostics and Health Management (PHM) can be used effectively to address some of the key challenges, in particular new challenges associated with the transfer of consumer electronics to automotive industry. The concept of PHM is not new, but its application to electronic systems is relatively new. It is expected that the PHM demand for electronic systems would continuously increase as autonomous driving is being realized. This paper attempts to summarize the recent studies in the system-level PHM of electronic systems. Condition monitoring (CM) techniques and prognostics methods used for the PHM of electronic systems are reviewed first. Various implementation examples are followed using different system classifications. The findings from this review is expected to offer a technical summary of accomplishments and challenges during the course of applying PHM for electronic systems, and to identify future research tasks to be performed to make the PHM a more viable tool for reliability assessment of electronic systems.","PeriodicalId":174615,"journal":{"name":"2017 18th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126000305","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
In-situ monitoring of field conditions and interconnect integrity for an electronic on-board module 现场监测现场条件和互连完整性的电子板载模块
R. Labie, B. Vandevelde, Wesley van Meensel, Mike Vogeleer, Daniel Werkhoven, B. Allaert, G. Willems
{"title":"In-situ monitoring of field conditions and interconnect integrity for an electronic on-board module","authors":"R. Labie, B. Vandevelde, Wesley van Meensel, Mike Vogeleer, Daniel Werkhoven, B. Allaert, G. Willems","doi":"10.1109/EUROSIME.2017.7926267","DOIUrl":"https://doi.org/10.1109/EUROSIME.2017.7926267","url":null,"abstract":"An electronic test module is designed in order to monitor field failures of board assembly interconnections while simultaneously measuring the environmental loading conditions. The test module is built-in on the ceiling of a daily driving bus. During operation, when the engine is on, daisy chain interconnections as well as temperature and accelerometer sensors are measured continuously. The purpose is to extract critical loading conditions which could be a first step towards the introduction of prognostic health monitoring units. After 1.5 years of testing, no failures were identified for two types of assembly materials: solder and conductive adhesive. Temperature fluctuations turned out to be very small with a limited maximum temperature around 35°C due to ambient regulation of the bus interior. Furthermore, relatively mild acceleration values are monitored at low frequency. New experiments in more harsh environments are solicited.","PeriodicalId":174615,"journal":{"name":"2017 18th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"63 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126625204","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Lifetime modeling based on anodic oxidation failure for packages with internal galvanic isolation 基于内部电隔离封装阳极氧化失效的寿命建模
R. Schaller, V. Strutz, H. Theuss, R. Dudek, S. Rzepka
{"title":"Lifetime modeling based on anodic oxidation failure for packages with internal galvanic isolation","authors":"R. Schaller, V. Strutz, H. Theuss, R. Dudek, S. Rzepka","doi":"10.1109/EUROSIME.2017.7926272","DOIUrl":"https://doi.org/10.1109/EUROSIME.2017.7926272","url":null,"abstract":"In More-than-Moore technologies, the number and complexity of micro and nano devices, that are directly integrated into control units of power electronics and mechatronics systems, increase. These systems typically operate at working voltages in the range of 220–1000 VRMS [1].","PeriodicalId":174615,"journal":{"name":"2017 18th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"112 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126849090","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Effects of phosphor dispersion on optical characteristics of LED Chip Scale Package LEDs 荧光粉色散对LED芯片级封装LED光学特性的影响
C. Qian, Liang Liang Luo, Jiajie Fan, Xiao Qiang Li, X. Fan, Guo Qi Zhang
{"title":"Effects of phosphor dispersion on optical characteristics of LED Chip Scale Package LEDs","authors":"C. Qian, Liang Liang Luo, Jiajie Fan, Xiao Qiang Li, X. Fan, Guo Qi Zhang","doi":"10.1109/EUROSIME.2017.7926244","DOIUrl":"https://doi.org/10.1109/EUROSIME.2017.7926244","url":null,"abstract":"As being used in a phosphor converted white LED (pc-white LED), the phosphor powders are always mixed with silicone for the color conversion of LED blue chip. Therefore, phosphor dispersion in the phosphor/silicone composite is regarded as a critical factor for optical characteristics of pc-white LEDs. In this paper, effects of the phosphor dispersion on the spectra, luminous efficacies and color coordinates of the pc-white LEDs are investigated from experimental measurements of a number of Chip Scale Package (CSP) LEDs with different phosphor dispersion tragedies. The measurement results indicate that the spectra become not significantly varied when the phosphor concentration above the chip goes up to a threshold, e.g. 12%. Moreover, both the luminous efficacy and one of color coordinates u' of the CSP samples slightly increase and then reach a convergence by shifting more phosphor from the area around the chip to the area above the chip. Whereas, the color coordinate v' remains more or less the same. This work is meaningful in the following two aspects: on one hand, it gives a new perspective on the effects of phosphor dispersion on the optical characteristics of pc-white LEDs; on the other hand, it provides a new design guiding rule for those pc-white LEDs with typical spectra.","PeriodicalId":174615,"journal":{"name":"2017 18th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"75 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121519508","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Robust design optimization: On methodology and short review 稳健设计优化:关于方法论和简短回顾
E. Bektas, K. Broermann, G. Pecanac, S. Rzepka, C. Silber, B. Wunderle
{"title":"Robust design optimization: On methodology and short review","authors":"E. Bektas, K. Broermann, G. Pecanac, S. Rzepka, C. Silber, B. Wunderle","doi":"10.1109/EUROSIME.2017.7926290","DOIUrl":"https://doi.org/10.1109/EUROSIME.2017.7926290","url":null,"abstract":"Integrated circuit (IC) packages can delaminate under thermal cyclic loading because of elastic properties mismatch between the components. On the other hand, delamination has no pattern which points out the effect of variations of the design parameters on the response. Hence, a robustness estimation should be done to have more stable IC packages which show no important variations in the response with respect to uncertainties in the design parameters. In this paper, the importance of the robustness estimation for IC package design will be explained and a methodology on robust design estimations will be introduced. After that a short literature review will be given about robust design optimization.","PeriodicalId":174615,"journal":{"name":"2017 18th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131271543","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Multi-physics based system simulations for magnetic sensors 基于多物理场的磁传感器系统仿真
H. Köck, Gernot Binder, Frank Heinrichs, G. Wautischer, F. Bruckner, D. Süss
{"title":"Multi-physics based system simulations for magnetic sensors","authors":"H. Köck, Gernot Binder, Frank Heinrichs, G. Wautischer, F. Bruckner, D. Süss","doi":"10.1109/EUROSIME.2017.7926274","DOIUrl":"https://doi.org/10.1109/EUROSIME.2017.7926274","url":null,"abstract":"Today's magnetic sensor applications demand a detailed understanding of all relevant system components. This work presents a holistic simulation methodology to account for the close interaction between ferromagnetic target objects, magnetic circuit designs and specific sensor characteristics of relevant Hall and xMR technologies.","PeriodicalId":174615,"journal":{"name":"2017 18th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"38 11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133510867","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Interface comparison involved in flexible electronics using molecular modeling 利用分子模型进行柔性电子器件界面比较
N. Iwamoto, Carol Putman, Gregory Vernon, Rachel Cramm Horn, A. Bernreuther
{"title":"Interface comparison involved in flexible electronics using molecular modeling","authors":"N. Iwamoto, Carol Putman, Gregory Vernon, Rachel Cramm Horn, A. Bernreuther","doi":"10.1109/EUROSIME.2017.7926216","DOIUrl":"https://doi.org/10.1109/EUROSIME.2017.7926216","url":null,"abstract":"Although the area of flexible circuits is not new, current display and portable electronics consumer markets are driving device and packaging designs that will require increasingly higher robustness, especially as more devices are driven toward lightweight, wearable designs that enhance the personal IOT (Internet of Things) association. There will be an advantage for developers in flexible electronics to fully understand critical interface weaknesses that can in-turn help to push new material development. The use of molecular modeling to study interfacial failure has been applied to the flex circuit adhesive-to-metal interfaces in order to understand the relative weaknesses at these interfaces. Specifically copper/adhesive and chromium/adhesive interfaces have been modeled using the major polymer components of the adhesive and the metal oxides. This paper will discuss the results of these models and how polymer composition may be contributing to specific interface failure, and consistencies with observed failure.","PeriodicalId":174615,"journal":{"name":"2017 18th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133906079","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Analytical and simulation-based risk assessment of imprint depth and brittle fracture in bond pad stacks 基于分析与仿真的粘结垫层压印深度与脆性断裂风险评估
G. M. Reuther, Ivan Penjovic, A. Brezmes, R. Pufall
{"title":"Analytical and simulation-based risk assessment of imprint depth and brittle fracture in bond pad stacks","authors":"G. M. Reuther, Ivan Penjovic, A. Brezmes, R. Pufall","doi":"10.1109/EUROSIME.2017.7926258","DOIUrl":"https://doi.org/10.1109/EUROSIME.2017.7926258","url":null,"abstract":"During electrical wafer testing and wire bonding onto pad metallization, oxide layers in Backend-of-Line (BEOL) pad stacks are exposed to the risk of mechanical damage. Subsequent metal migration into oxide cracks leads to electrical device failure. We undertook simulation-based risk assessment using analytical and Finite Element Modelling (FEM) with regard to critical imprint depths in top metallization layers of elementary metal-oxide test vehicles. Our modelling outcomes cope well with results obtained by instrumented indentation and, thus, constitute a promising physics-of-failure approach towards minimizing the risk of lifetime-limiting oxide fracture.","PeriodicalId":174615,"journal":{"name":"2017 18th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133919599","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Design and simulation of a 2-bit distributed S-band MEMS phase shifter 2位分布式s波段MEMS移相器的设计与仿真
Noor Amalina Ramli, T. Arslan
{"title":"Design and simulation of a 2-bit distributed S-band MEMS phase shifter","authors":"Noor Amalina Ramli, T. Arslan","doi":"10.1109/EUROSIME.2017.7926263","DOIUrl":"https://doi.org/10.1109/EUROSIME.2017.7926263","url":null,"abstract":"In this paper, a wideband distributed coplanar waveguide (CPW) phase shifter has been designed for S-band operation. The phase shifter is developed on a high impedance CPW transmission line periodically loaded with microelectro-mechanical system (MEMS) shunt switches. To reduce the insertion loss due to the transmission line, a 525 µm high resistivity silicon substrate (ρ=10 kΩ·cm) and 2 µm thick aluminium center conductor are used. A large metal-insulator-metal (MIM) capacitor is implemented on the CPW center conductor between the two bits to separate the DC actuation voltage during operation. There are 41 MEMS shunt switches utilised in the design. The simulated reflection coefficients are less than −10 dB from 2 to 4 GHz for all 4 states (0°, 90°, 180° and 270°). The simulated average insertion loss at 2.45 GHz is 1.69 dB. The size of the phase shifter has been optimized by employing 60° mitered CPW bends to result in overall size of 11.62 mm × 28.35 mm. The simulated pull-in voltage of the fixed-fixed beams implemented in the design is 9.68 V. The true time delay characteristic of the phase shifter makes it suitable for use in smart antenna applications, radar systems and ultra-wideband (UWB) microwave imaging.","PeriodicalId":174615,"journal":{"name":"2017 18th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125569740","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Delamination-induced stitch crack of copper wires 铜线脱层引起的针脚裂纹
M. van Soestbergen, A. Mavinkurve, S. Shantaram, J. Zaal
{"title":"Delamination-induced stitch crack of copper wires","authors":"M. van Soestbergen, A. Mavinkurve, S. Shantaram, J. Zaal","doi":"10.1109/EUROSIME.2017.7926294","DOIUrl":"https://doi.org/10.1109/EUROSIME.2017.7926294","url":null,"abstract":"Stitch crack is a recurring failure mechanism for many years in semiconductor packaging. Currently, the combination of highly filled mold compounds, and copper wire increases the risk for stitch cracks after temperature cycling (TC). Firstly, highly filled mold compounds generally have a Coefficient of Thermal Expansion (CTE) that is much lower than that of copper, and a much higher elastic modulus compared to traditional compounds, which results in a higher stress on the bond wire compared to traditional compounds having a CTE that matches the CTE of copper. Secondly, the copper wire experiences large plastic deformation while forming the stitch during wire bonding at elevated temperature, which leads to local ‘embrittlement’. The combination of both effects, i.e., increased stress, and reduced resistance to fatigue, leads to a higher risk of cracking. However, in general the stitch is sufficiently strong to withstand the increased stress. In this work, we will show that delamination is a prerequisite for stitch cracking to occur because it has a pronounced effect on the stress in the stitch, as it reduces the support by the lead, resulting in more force being exerted onto the stitch. Simulations reveal increased stress for a stitch where the mold compound is delaminated compared to a fully adherent compound. The results of the simulations match the results of TC reliability tests, and scanning acoustic tomography to identify delaminated regions within the package.","PeriodicalId":174615,"journal":{"name":"2017 18th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)","volume":"2 3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2017-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128825197","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
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