发布求助
文献互助 智能选刊 最新文献

2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)最新文献

筛选
英文 中文
Design guidelines for thermopower generators with multi-layered black phosphorus 多层黑磷热电发电机设计导则
2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2018-09-01 DOI: 10.1109/SISPAD.2018.8551721
P. Sengupta, Giftsondass Irudayadass, J. Shi
{"title":"Design guidelines for thermopower generators with multi-layered black phosphorus","authors":"P. Sengupta, Giftsondass Irudayadass, J. Shi","doi":"10.1109/SISPAD.2018.8551721","DOIUrl":"https://doi.org/10.1109/SISPAD.2018.8551721","url":null,"abstract":"We study a thermal gradient induced current $( I _{th})$ flow in potassium (K)-doped two-dimensional anisotropic black phosphorus (BP) with semi-Dirac dispersion. The prototype device is a BP channel clamped between two contacts maintained at unequal temperatures. The choice of BP lies in the predicted efficient thermolectric behaviour. A temperature-induced difference in the Fermi levels of the two contacts drives the current (typified by the electro-thermal conductance) which we calculate using the Landauer transport equation. The current shows an initial rise when the device is operated at lower temperatures. The rise stalls at progressively higher temperatures and $I _{th}$ acquires a plateau-like flat profile indicating a competing effect between a larger number of transmission modes and a corresponding drop in the Fermi level difference between the contacts. The current is computed for both n- and p -type BP and the difference thereof is attributed to the particle-hole asymmetry. We conclude by pointing out improved thermal behaviour that may arise in multi-layered BP through topological phase transitions induced by additional K-doping.","PeriodicalId":170070,"journal":{"name":"2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123613898","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
PCM compact model: Optimized methodology for model card extraction PCM紧凑模型:优化的模型卡提取方法
2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2018-09-01 DOI: 10.1109/SISPAD.2018.8551654
C. Pigot, F. Gilibert, M. Reyboz, M. Bocquet, J. Portal
{"title":"PCM compact model: Optimized methodology for model card extraction","authors":"C. Pigot, F. Gilibert, M. Reyboz, M. Bocquet, J. Portal","doi":"10.1109/SISPAD.2018.8551654","DOIUrl":"https://doi.org/10.1109/SISPAD.2018.8551654","url":null,"abstract":"To achieve high yield on product embedding PCM memory, it is mandatory to provide to designers accurately calibrated PCM compact model. To achieve this goal, it is mandatory to develop standardized model card extraction methodology. In this paper, we present a PCM model card extraction flow based on a minimal set of static and dynamic measurements. Based on this measurement, characteristics are first obtained and model card parameters extracted without any loop back, i.e. each parameter is extracted only once on a given characteristic. After this extraction procedure, model card values are validated through a comparison with an extra characteristics SET-Low characteristic not used for the extraction.","PeriodicalId":170070,"journal":{"name":"2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"295 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116225103","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Optical Properties of Organic Perovskite Materials for Finite Nanostructures 有限纳米结构有机钙钛矿材料的光学性质
2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2018-09-01 DOI: 10.1109/SISPAD.2018.8551719
H. Ryu, K. Hong
{"title":"Optical Properties of Organic Perovskite Materials for Finite Nanostructures","authors":"H. Ryu, K. Hong","doi":"10.1109/SISPAD.2018.8551719","DOIUrl":"https://doi.org/10.1109/SISPAD.2018.8551719","url":null,"abstract":"We examine the effect of the structural confinement on optical properties of organic lead halide perovskite supercells of various shapes. With a set of 8-band tight-binding parameters that reproduce the bulk band gaps and offsets of MAPb (I/ Br/Cl)3 that have been known through DFT simulations, we explore the band gap of finite supercells that have homogeneous and mixed halides. This preliminary work already delivers a set of information that is useful for potential device designs because band gaps of organic lead halide perovskite supercells are rarely understood, particularly for realistically sized finite structures.","PeriodicalId":170070,"journal":{"name":"2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116667432","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The influence of carbon in the back-barrier layers on the surface electric field peaks in GaN Schottky diodes GaN肖特基二极管中后势垒层中碳对表面电场峰的影响
2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2018-09-01 DOI: 10.1109/SISPAD.2018.8551652
B. Bakeroot, B. D. Jaeger, N. Ronchi, S. Stoffels, M. Zhao, S. Decoutere
{"title":"The influence of carbon in the back-barrier layers on the surface electric field peaks in GaN Schottky diodes","authors":"B. Bakeroot, B. D. Jaeger, N. Ronchi, S. Stoffels, M. Zhao, S. Decoutere","doi":"10.1109/SISPAD.2018.8551652","DOIUrl":"https://doi.org/10.1109/SISPAD.2018.8551652","url":null,"abstract":"Technology Computer Aided Design simulations are used to assess the influence of carbon in the back-barrier layers of GaN-on-Si wafers on the voltage distribution in GaN Schottky diodes. It is shown that carbon cannot be present as an acceptor only – as it is commonly assumed. The carbon needs to be compensated by donors or partly electrically inactive in order to explain the observed high hard breakdown voltage in GaN-onSi Schottky diodes. Furthermore, it is shown that the level of donor compensation of the carbon will have a significant influence on the two-dimensional voltage distribution in the devices, and, hence, on the surface electric field peaks. This conclusion is important to consider in the design of field plate extensions of the Schottky diode.","PeriodicalId":170070,"journal":{"name":"2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"1150 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124005478","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
SISPAD 2018 Cover Page SISPAD 2018封面
2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2018-09-01 DOI: 10.1109/sispad.2018.8551738
{"title":"SISPAD 2018 Cover Page","authors":"","doi":"10.1109/sispad.2018.8551738","DOIUrl":"https://doi.org/10.1109/sispad.2018.8551738","url":null,"abstract":"","PeriodicalId":170070,"journal":{"name":"2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"84 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132498429","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
First Principles Calculations of the Effect of Stress in the I-V Characteristics of the CoSi2/Si Interface 应力对CoSi2/Si界面I-V特性影响的第一性原理计算
2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2018-09-01 DOI: 10.1109/SISPAD.2018.8551750
O. D. Restrepo, Qun Gao, S. Pandey, E. Cruz‐Silva, E. Bazizi
{"title":"First Principles Calculations of the Effect of Stress in the I-V Characteristics of the CoSi2/Si Interface","authors":"O. D. Restrepo, Qun Gao, S. Pandey, E. Cruz‐Silva, E. Bazizi","doi":"10.1109/SISPAD.2018.8551750","DOIUrl":"https://doi.org/10.1109/SISPAD.2018.8551750","url":null,"abstract":"We present ab initio-based electronic transport calculations on the effect of uniaxial and bi-axial stress on the CoSi2/n Si interface resistivity for the three main silicon crystallographic directions. For the [001] case, we identify two distinctive low and high bias conduction regimes for both compressive and tensile stress. In these regimes, the current is dominated by electronic transmission pathways near the Γ point for bias up to ~0.1V, while for higher bias it is dominated by transmission at the (±1/2, ±1/2) conduction band valleys of the Brillouin zone, which results in a contact resistivity decrease of up to 30% at 0.2V bias. This effect is less pronounced for the [110] direction, and negligible for the [111] case due to the symmetry of the Si conduction band valleys along these directions. This study provides insight into stress-based optimization pathways for contact resistivity reduction of silicide interfaces in next generation semiconductor devices.","PeriodicalId":170070,"journal":{"name":"2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"452 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132996050","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
SISPAD 2018 Program
2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2018-09-01 DOI: 10.1109/sispad.2018.8551754
{"title":"SISPAD 2018 Program","authors":"","doi":"10.1109/sispad.2018.8551754","DOIUrl":"https://doi.org/10.1109/sispad.2018.8551754","url":null,"abstract":"","PeriodicalId":170070,"journal":{"name":"2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"93 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133571329","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High Throughput Simulation On The Impurity-Vacancy Diffusion Mechanism Using First-Principles 基于第一性原理的杂质-空位扩散机制高通量模拟
2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2018-09-01 DOI: 10.1109/SISPAD.2018.8551631
I. Martín-Bragado, Yumi Park, C. Zechner, Y. Oh
{"title":"High Throughput Simulation On The Impurity-Vacancy Diffusion Mechanism Using First-Principles","authors":"I. Martín-Bragado, Yumi Park, C. Zechner, Y. Oh","doi":"10.1109/SISPAD.2018.8551631","DOIUrl":"https://doi.org/10.1109/SISPAD.2018.8551631","url":null,"abstract":"First principle calculations are a convenient and cost effective procedure to obtain the properties of the new and optimized materials required to solve the challenges of the next generation of semiconductor devices. But, even with reliable tools, the computation of the vacancy intermediated impurity diffusion can be challenging, especially in alloys. This work shows an algorithm to automate the process of such calculation by implementing a methodology tocompute ring mechanisms in generic materials. Results for semiconductor (namely, Ge diffusion in Si and As diffusion in a Si0.5 Ge0.5 random alloy) and non-semiconductor materials (Al diffusion in TiN) are shown. The results stress botha) the importance of the ring mechanism in understanding the diffusivity of impurities in crystalline materials, and b) the need for automatic algorithms that deal with the complexity of sampling and generating consistent configurations for such calculations.","PeriodicalId":170070,"journal":{"name":"2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"214 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131828276","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Quantum Transport Investigation of Threshold Voltage Variability in Sub-10 nm JunctionlessSi Nanowire FETs 亚10nm无结硅纳米线场效应管阈值电压变化的量子输运研究
2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2018-09-01 DOI: 10.1109/SISPAD.2018.8551638
S. Berrada, Jaehyun Lee, H. Carrillo-Nuñez, C. Medina-Bailón, F. Adamu-Lema, V. Georgiev, P. Asenov
{"title":"Quantum Transport Investigation of Threshold Voltage Variability in Sub-10 nm JunctionlessSi Nanowire FETs","authors":"S. Berrada, Jaehyun Lee, H. Carrillo-Nuñez, C. Medina-Bailón, F. Adamu-Lema, V. Georgiev, P. Asenov","doi":"10.1109/SISPAD.2018.8551638","DOIUrl":"https://doi.org/10.1109/SISPAD.2018.8551638","url":null,"abstract":"In this paper, we use the Non-Equilibrium Green's Function formalism to study the dependence of the threshold voltage variability on the cross-section shape and the gate length in Junction Less Field Effect Transistors. Each configuration, i.e. gate length and cross-section, was investigated using a statistical ensemble of 100 samples. We found that the variability in threshold voltage is increased independently of the cross-section shape when the gate length isshrunk down to 5 nm. We attribute this results to the higher wave function “randomization” in longer gate lengths.","PeriodicalId":170070,"journal":{"name":"2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"09 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124504819","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Modeling and Finite Element Simulation of Gate Leakage in Cylindrical GAA Nanowire FETs 圆柱形GAA纳米线场效应管栅极泄漏的建模与有限元仿真
2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2018-09-01 DOI: 10.1109/SISPAD.2018.8551637
Ashutosh Mahajan, Ravi Solanki, R. Sahoo, R. Patrikar
{"title":"Modeling and Finite Element Simulation of Gate Leakage in Cylindrical GAA Nanowire FETs","authors":"Ashutosh Mahajan, Ravi Solanki, R. Sahoo, R. Patrikar","doi":"10.1109/SISPAD.2018.8551637","DOIUrl":"https://doi.org/10.1109/SISPAD.2018.8551637","url":null,"abstract":"The gate-all-around (GAA) nanowire based devices have generated research interest in recent years for their potential in scaling beyond $10mathrm{n}mathrm{m}$ as they offer excellent control over channel. Reduction in gate oxide thickness and low effective mass channel material for better drive current aid gate leakage which can put limit to further scaling. In this work, we study gate leakage problem for cylindrical nanowire (NW) GAA device and present a model to accurately compute lifetime of the quasi-bound-states (QBS) in inversion region of NW. We study scattering of cylindrical waves by solving Schrodinger equation with open boundary conditions using finite element method (FEM), and thereby calculate gate leakage current for the GAA device. We conduct survey of a broad range of device materials, investigate effect of device dimensions and stress on the gate tunneling leakage. We try to bring out the conditions at which direct tunneling current through the oxide is significant and can possibly exceed the maximum permissible gate current density.","PeriodicalId":170070,"journal":{"name":"2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122557918","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：481959085
Book学术官方微信