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2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA)最新文献

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PBTI Study in Native High Voltage Device 国产高压器件中PBTI的研究
2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2019-07-01 DOI: 10.1109/IPFA47161.2019.8984914
B. Tsai, Z. Peng, H. Chuang, C. F. Chen, C. Hsu
{"title":"PBTI Study in Native High Voltage Device","authors":"B. Tsai, Z. Peng, H. Chuang, C. F. Chen, C. Hsu","doi":"10.1109/IPFA47161.2019.8984914","DOIUrl":"https://doi.org/10.1109/IPFA47161.2019.8984914","url":null,"abstract":"The native HV device (w/o Vt implantation) and regular HV device (w/i Vt implantation) of PBTI Vt shift behaviors are investigated in this paper, and an envisioned mechanism is provided. Native HV device showed a high Vt shift at the beginning of Vg stress, the Ig-Vg curve measured supported this observation; also, the mismatch characterizations were also measured and compared in both native and regular HV devices.","PeriodicalId":169775,"journal":{"name":"2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"2 8","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120824563","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
IPFA 2019 Copyright Page IPFA 2019版权页面
2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2019-07-01 DOI: 10.1109/ipfa47161.2019.8984851
{"title":"IPFA 2019 Copyright Page","authors":"","doi":"10.1109/ipfa47161.2019.8984851","DOIUrl":"https://doi.org/10.1109/ipfa47161.2019.8984851","url":null,"abstract":"","PeriodicalId":169775,"journal":{"name":"2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"41 44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132429919","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Failure Analysis and Improvement of Superjunction MOSFET under UIS Stress Condition 超结MOSFET在UIS应力条件下的失效分析及改进
2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2019-07-01 DOI: 10.1109/IPFA47161.2019.8984847
M. Ren, Yining Ma, Shengrong Zhong, Wei Li, Songrong Wu, Zehong Li, Wei Gao, Bo Zhang
{"title":"Failure Analysis and Improvement of Superjunction MOSFET under UIS Stress Condition","authors":"M. Ren, Yining Ma, Shengrong Zhong, Wei Li, Songrong Wu, Zehong Li, Wei Gao, Bo Zhang","doi":"10.1109/IPFA47161.2019.8984847","DOIUrl":"https://doi.org/10.1109/IPFA47161.2019.8984847","url":null,"abstract":"Reliability has increasingly become an important concern in Superjunction MOSFET (SJ-MOS) design. Failure mechanism and improvement in the process of unclamped inductive switching (UIS) are always the research focuses of SJ-MOS reliability. This paper analyzes the failed SJ-MOS devices in the UIS test, and then studies the influences of drift-region design on the avalanche durations of SJ-MOS and proposes the improvement suggestions.","PeriodicalId":169775,"journal":{"name":"2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134532659","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
High-resolution 3D X-ray Microscopy for Structural Inspection and Measurement of Semiconductor Package Interconnects 用于半导体封装互连结构检查和测量的高分辨率3D x射线显微镜
2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2019-07-01 DOI: 10.1109/IPFA47161.2019.8984854
Syahirah Mohammad-Zulkifli, Bernice Zee, Gregorich Thomas, A. Gu, Yanjing Yang, Terada Masako, Weijie Lee
{"title":"High-resolution 3D X-ray Microscopy for Structural Inspection and Measurement of Semiconductor Package Interconnects","authors":"Syahirah Mohammad-Zulkifli, Bernice Zee, Gregorich Thomas, A. Gu, Yanjing Yang, Terada Masako, Weijie Lee","doi":"10.1109/IPFA47161.2019.8984854","DOIUrl":"https://doi.org/10.1109/IPFA47161.2019.8984854","url":null,"abstract":"3D X-ray Microscopy (XRM) has become an established failure analysis (FA) tool for bridging fault isolation and physical failure analysis (PFA) because it enables the visualization of defects without destroying the device under test (DUT). Through workflow improvements, it offers the opportunity to improve process characterization and device qualifications. This paper describes the application of new automated scanning and image acquisition capability for repetitive XRM device inspection in defined regions of interest (ROI). Results obtained from two test matrices showed good positioning repeatability meeting accuracy requirements for both small and medium-sized test vehicles with fast acquisition times.","PeriodicalId":169775,"journal":{"name":"2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130997430","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
An effective monitored and improved method to control moisture for outgoing FOSB 一种有效的监测和改进的方法来控制外排FOSB的水分
2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2019-07-01 DOI: 10.1109/IPFA47161.2019.8984805
Yi-Ying Chen, C. Tseng, Hsin-Wen Fan, Chih-Chao Pai
{"title":"An effective monitored and improved method to control moisture for outgoing FOSB","authors":"Yi-Ying Chen, C. Tseng, Hsin-Wen Fan, Chih-Chao Pai","doi":"10.1109/IPFA47161.2019.8984805","DOIUrl":"https://doi.org/10.1109/IPFA47161.2019.8984805","url":null,"abstract":"Quality control of outgoing wafer products is a critical item in the technical industry. An appropriate keeping environment (Humidity/Temperature…etc.) is necessary after the complex wafer manufacturing process to ensure the wafer quality. FOSB is an essential material during the wafer packing process and it can provide an isolated environment to protect outgoing wafers. But each FOSB has different properties, like different used times, clean recipe, moisture content…etc. During vacuum packaging, the humidity and pressure between the FOSB outside wall and packing bag reduces, and causes the moisture inside the FOSB to diffuse out. This then causes a humidity increase inside the FOSB, where wafers are placed (Experiment result humidity increase >5%). But the general method for detecting solid moisture content (like moisture analyser) is not suitable in FOSB, as it is such a big and unbreakable item. In this study, we understood the mechanism for inside humidity change after vacuum packing and found an effective monitored/improved method to control moisture for outgoing FOSB and ensure our packing processes are suitable, uniform, and the environmental status can be controlled precisely. Through this method we can enhance our quality control abilities and provide more assurance for both customers and producers.","PeriodicalId":169775,"journal":{"name":"2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131260715","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
EOFM for contactless parameter extraction of low k dielectric MIS structures EOFM用于低k介电MIS结构的非接触参数提取
2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2019-07-01 DOI: 10.1109/IPFA47161.2019.8984757
N. Herfurth, E. Amini, A. Beyreuther, T. Nakamura, S. Keil, C. Boit
{"title":"EOFM for contactless parameter extraction of low k dielectric MIS structures","authors":"N. Herfurth, E. Amini, A. Beyreuther, T. Nakamura, S. Keil, C. Boit","doi":"10.1109/IPFA47161.2019.8984757","DOIUrl":"https://doi.org/10.1109/IPFA47161.2019.8984757","url":null,"abstract":"This paper investigates electro-optical frequency mapping (EOFM) characteristics of metal insulator semiconductor (MIS) capacitor test structures. The EOFM characteristic describes the EOFM signal intensity dependence to the device under test (DUT) input signal amplitude. We can monitor the gradual increase of charge per voltage in accumulation and in strong inversion. We show that the device parameters flat band voltage and the threshold voltage can be extracted from a series of EOFM measurements. This parameter extraction is linked to a low k dielectric degradation experiment. Changing of the extracted parameters during a degradation process allows contactless monitoring of the device properties and their degradation under electrical stress.","PeriodicalId":169775,"journal":{"name":"2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129752752","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Case Study on Precise Boron Quantification of Mixed Matrix 混合基质中硼的精确定量实例研究
2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2019-07-01 DOI: 10.1109/IPFA47161.2019.8984874
Kian Kok Ong, Yun Wang, H. Teo, Ramesh Rao Nistala, Z. Mo
{"title":"Case Study on Precise Boron Quantification of Mixed Matrix","authors":"Kian Kok Ong, Yun Wang, H. Teo, Ramesh Rao Nistala, Z. Mo","doi":"10.1109/IPFA47161.2019.8984874","DOIUrl":"https://doi.org/10.1109/IPFA47161.2019.8984874","url":null,"abstract":"Material characterization tool, Secondary Ion Mass Spectrometry (SIMS) with its high precision and reproducibility is widely used to capture any abnormality in the dopant profile of the implanted species caused by drift in implant processes or equipment. The characterization usually is performed on setup test wafer with a single matrix substrate (usually silicon substrate). However, this quantification approach is not suitable for a mixed matrix of the silicon substrate and silicon dioxide (physical segregation structure). In this paper, it is shown that accurate dosage quantification can be obtained using the proposed numerical method.","PeriodicalId":169775,"journal":{"name":"2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"69 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134192145","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Backside and Topside OBIRCH Defect Localization on Multi-layer Finger Structure MOSFET Capacitor with the aid of Focused Ion Beam (FIB) 基于聚焦离子束(FIB)的多层指状结构MOSFET电容器背面和上部OBIRCH缺陷定位
2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2019-07-01 DOI: 10.1109/IPFA47161.2019.8984843
Ronald C. Apolinaria, F. Cruz, Flordeliza L. Valiente
{"title":"Backside and Topside OBIRCH Defect Localization on Multi-layer Finger Structure MOSFET Capacitor with the aid of Focused Ion Beam (FIB)","authors":"Ronald C. Apolinaria, F. Cruz, Flordeliza L. Valiente","doi":"10.1109/IPFA47161.2019.8984843","DOIUrl":"https://doi.org/10.1109/IPFA47161.2019.8984843","url":null,"abstract":"Fault localization using backside OBIRCH (Optical Beam Induced Resistance Change) on metal finger structures is not always effective, especially when the Integrated Circuit (IC) device is composed of multiple metal layers and the defect is located on the mid or upper metal lines. The use of both backside and topside OBIRCH techniques is a known effective approach that increases the success rate in determining the failure mechanism for these cases. However, fault isolation systems are either configured for backside or topside method only. In the Maxim Integrated Philippines Failure Analysis laboratory, only the backside OBIRCH system is available. Thus, defect localization on faulty internal nodes becomes a challenge when only one type of fault isolation system configuration is available. This study presents a new method by doing FIB (Focused Ion Beam) circuit edit to enable topside OBIRCH using the available backside-configured OBIRCH system. The new method was found to be an effective alternative in resolving particle-related problem on multi-layer finger metal structure MOSFET capacitor.","PeriodicalId":169775,"journal":{"name":"2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132978469","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Metallic Trace Contaminant Detection Using SEM/EDX 金属痕量污染物的SEM/EDX检测
2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2019-07-01 DOI: 10.1109/IPFA47161.2019.8984856
Aaron Lee, Bernice Zee, F. Foo
{"title":"Metallic Trace Contaminant Detection Using SEM/EDX","authors":"Aaron Lee, Bernice Zee, F. Foo","doi":"10.1109/IPFA47161.2019.8984856","DOIUrl":"https://doi.org/10.1109/IPFA47161.2019.8984856","url":null,"abstract":"Surface characterization techniques such as Auger Electron Spectroscopy (AES) and X-ray Photoelectron Spectroscopy (XPS) are commonly used to analyze surface contaminants to determine their elemental composition and/or chemical states. However, one may not have easy access to these techniques due to high cost of ownership and stringent analysis requirements. Thus, an alternative characterization technique, such as Scanning Electron Microscopy (SEM)/Energy Dispersive X-ray (EDX) spectroscopy, could be considered for trace contamination detection if precise elemental composition identification is not required. This paper describes the application of SEM/EDX in detecting trace amounts of Cu on Si die surface. Overall, the results showed that at a low accelerating electron voltage, EDX was able to conclusively detect Cu contaminant.","PeriodicalId":169775,"journal":{"name":"2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124082654","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Investigations on the Short-Circuit Degradation and its Mechanism of 1.2-KV 19-A SiC power MOSFETs 1.2 kv 19a SiC功率mosfet短路退化及其机理研究
2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2019-07-01 DOI: 10.1109/IPFA47161.2019.8984829
J. L. Wang, Y. Chen, Z. He, Y. En, X. B. Xu, Y. Huang, K. Geng
{"title":"Investigations on the Short-Circuit Degradation and its Mechanism of 1.2-KV 19-A SiC power MOSFETs","authors":"J. L. Wang, Y. Chen, Z. He, Y. En, X. B. Xu, Y. Huang, K. Geng","doi":"10.1109/IPFA47161.2019.8984829","DOIUrl":"https://doi.org/10.1109/IPFA47161.2019.8984829","url":null,"abstract":"To provide a guideline for converter design and fault protection, the failure mechanism and reliability of silicon carbide (SiC) power MOSFETs needs to be further investigated. In this paper, the failure mechanism during short-circuit (SC) of commercial 1.2-KV/19-A SiC power MOSFETs was investigated. After the SC tests, the Ids of the device decreased significantly. Moreover, it was found that the Vth and Igs increased obviously. The results demonstrated that negative charges were captured by the gate oxide and accumulated during the SC tests, which is eventually causes degradation of the gate oxide. The results of this study may be useful in the design and application of SiC power MOSFETs.","PeriodicalId":169775,"journal":{"name":"2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121078034","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
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