超结MOSFET在UIS应力条件下的失效分析及改进

2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2019-07-01 DOI:10.1109/IPFA47161.2019.8984847

M. Ren, Yining Ma, Shengrong Zhong, Wei Li, Songrong Wu, Zehong Li, Wei Gao, Bo Zhang

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引用次数: 1

摘要

可靠性日益成为超结MOSFET (SJ-MOS)设计中的重要问题。无箝位电感开关(UIS)失效机理及改进一直是SJ-MOS可靠性研究的重点。本文分析了SJ-MOS器件在美国试验中失败的情况，研究了漂移区设计对SJ-MOS器件雪崩持续时间的影响，并提出了改进建议。

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Failure Analysis and Improvement of Superjunction MOSFET under UIS Stress Condition

Reliability has increasingly become an important concern in Superjunction MOSFET (SJ-MOS) design. Failure mechanism and improvement in the process of unclamped inductive switching (UIS) are always the research focuses of SJ-MOS reliability. This paper analyzes the failed SJ-MOS devices in the UIS test, and then studies the influences of drift-region design on the avalanche durations of SJ-MOS and proposes the improvement suggestions.

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来源期刊

2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA)

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