国产高压器件中PBTI的研究

2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2019-07-01 DOI:10.1109/IPFA47161.2019.8984914

B. Tsai, Z. Peng, H. Chuang, C. F. Chen, C. Hsu

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引用次数: 0

摘要

本文研究了原生HV装置(w/o Vt注入)和常规HV装置(w/i Vt注入)对PBTI Vt移位行为的影响，并给出了设想的机理。原生HV装置在Vg应力开始时表现出较高的Vt位移，测量的Ig-Vg曲线支持这一观察结果;此外，还测量和比较了本地和常规高压器件中的失配特性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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PBTI Study in Native High Voltage Device

The native HV device (w/o Vt implantation) and regular HV device (w/i Vt implantation) of PBTI Vt shift behaviors are investigated in this paper, and an envisioned mechanism is provided. Native HV device showed a high Vt shift at the beginning of Vg stress, the Ig-Vg curve measured supported this observation; also, the mismatch characterizations were also measured and compared in both native and regular HV devices.

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来源期刊

2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA)

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