PBTI Study in Native High Voltage Device

Abstract

The native HV device (w/o Vt implantation) and regular HV device (w/i Vt implantation) of PBTI Vt shift behaviors are investigated in this paper, and an envisioned mechanism is provided. Native HV device showed a high Vt shift at the beginning of Vg stress, the Ig-Vg curve measured supported this observation; also, the mismatch characterizations were also measured and compared in both native and regular HV devices.