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2014 International Workshop on Computational Electronics (IWCE)最新文献

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2D Maxwell/transport time domain modeling of THz GaN distributed transferred electron device 太赫兹氮化镓分布转移电子器件的二维Maxwell/输运时域建模
2014 International Workshop on Computational Electronics (IWCE) Pub Date : 2014-06-03 DOI: 10.1109/IWCE.2014.6865861
C. Dalle, F. Dessenne, J. Thobel
{"title":"2D Maxwell/transport time domain modeling of THz GaN distributed transferred electron device","authors":"C. Dalle, F. Dessenne, J. Thobel","doi":"10.1109/IWCE.2014.6865861","DOIUrl":"https://doi.org/10.1109/IWCE.2014.6865861","url":null,"abstract":"In order to investigate the distributed semiconductor device high frequency operation, we are developing a 2D/3D time-domain electromagnetic physical simulator. It is based on a self-consistent solution of both the Maxwell equations and the free carrier macroscopic conservation equation sets issued from the Boltzmann general transport equation. Its large potential application field presently concerns the GaN THz distributed Transferred Electron Device (TED).","PeriodicalId":168149,"journal":{"name":"2014 International Workshop on Computational Electronics (IWCE)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131139714","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
How much time does FET scaling have left? FET缩放还剩多少时间?
2014 International Workshop on Computational Electronics (IWCE) Pub Date : 2014-06-03 DOI: 10.1109/IWCE.2014.6865875
D. Mamaluy, X. Gao, B. Tierney
{"title":"How much time does FET scaling have left?","authors":"D. Mamaluy, X. Gao, B. Tierney","doi":"10.1109/IWCE.2014.6865875","DOIUrl":"https://doi.org/10.1109/IWCE.2014.6865875","url":null,"abstract":"The ultimate end of CMOS scaling was predicted almost immediately after the now ubiquitous technology was invented by Frank Wanlass in 1963 [1]. Indeed, many possible limitations to downscaling were discussed in the 1970s, 80s, and 90s [2]. In 2003, Zhirnov et al. [3] estimated the minimal feature size of a “binary logic switch” to be around 1.5nm, based on the Heisenberg uncertainty and Landauer principles. Since then, there have been many papers [2,4,5] discussing the likely end of CMOS scaling due to lithographical, power-thermal, material, and other technological, as opposed to fundamental physical, limitations. In this work, we compute the device switching energy, CgVg2, for several representative FinFET/MuGFET devices, and explore the role of this quantity as a fundamental physical scaling limitation, which we predict will occur around 2030. In doing so, ITRS downscaling projection data [6] is utilized for reference. MuGFET switching energies are plotted as the blue curve in Fig. 1, in units of 100kBT (T=300K), as FET gate lengths are scaled to 6-nm and below. The inset of Fig. 1 represents our extrapolation of ITRS data. This new way of plotting switching energy reveals that as gate lengths arescaled below about 5nm, the switching energy approaches that of thermal fluctuations.","PeriodicalId":168149,"journal":{"name":"2014 International Workshop on Computational Electronics (IWCE)","volume":"157 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127371241","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Influence of device geometry on electrical characteristics of a 10.7 nm SOI-FinFET 器件几何形状对10.7 nm SOI-FinFET电特性的影响
2014 International Workshop on Computational Electronics (IWCE) Pub Date : 2014-06-03 DOI: 10.1109/IWCE.2014.6865877
A. Abdikarimov, G. Indalecio, E. Comesaña, A. García-Loureiro, N. Seoane, K. Kalna, A. E. Atamuratov
{"title":"Influence of device geometry on electrical characteristics of a 10.7 nm SOI-FinFET","authors":"A. Abdikarimov, G. Indalecio, E. Comesaña, A. García-Loureiro, N. Seoane, K. Kalna, A. E. Atamuratov","doi":"10.1109/IWCE.2014.6865877","DOIUrl":"https://doi.org/10.1109/IWCE.2014.6865877","url":null,"abstract":"Several sources of variability such as imperfections during the manufacturing process, variations in critical dimensions (eg. oxide thickness, gate length), or intrinsic parameter fluctuations (eg. random dopants), influence the both device design and device and circuit performance. In this work, we have studied the impact of a shape of the device body on the characteristics of a 10.7 nm gate length SOI-FinFET. After a meticulous calibration against Monte-Carlo simulations, we have studied the effect of changing the shape of the body from a square cross-section to a triangular one on the sub-threshold region of the device. We have analysed four figures of merit: off-current, sub-threshold slope, threshold voltage and sub-threshold swing. The best results, in terms of lower off-current and sub-threshold swing, were obtained for the triangular shape device, which makes this particular geometry more suitable for digital applications.","PeriodicalId":168149,"journal":{"name":"2014 International Workshop on Computational Electronics (IWCE)","volume":"108 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122122775","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Numerial analysis of local density of states of plasmons in Si-SiO2-silver nanocavity system si - sio2 -银纳米腔体系等离子体态局域密度的数值分析
2014 International Workshop on Computational Electronics (IWCE) Pub Date : 2014-06-03 DOI: 10.1109/IWCE.2014.6865855
M. Choi, M. Dutta, M. Stroscio
{"title":"Numerial analysis of local density of states of plasmons in Si-SiO2-silver nanocavity system","authors":"M. Choi, M. Dutta, M. Stroscio","doi":"10.1109/IWCE.2014.6865855","DOIUrl":"https://doi.org/10.1109/IWCE.2014.6865855","url":null,"abstract":"Local density of states of plasmons in a cylindrical silicon-SiO2-silver system induced by different polarization electric fields is analyzed numerically. Open source finite-difference time-domain method code is used. The result shows TMz polarization induces more plasmons than TEz polarization.","PeriodicalId":168149,"journal":{"name":"2014 International Workshop on Computational Electronics (IWCE)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125523365","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Spin diffusion and the role of screening effects in semiconductors 半导体中自旋扩散和筛选效应的作用
2014 International Workshop on Computational Electronics (IWCE) Pub Date : 2014-06-03 DOI: 10.1109/IWCE.2014.6865825
J. Ghosh, V. Sverdlov, S. Selberherr
{"title":"Spin diffusion and the role of screening effects in semiconductors","authors":"J. Ghosh, V. Sverdlov, S. Selberherr","doi":"10.1109/IWCE.2014.6865825","DOIUrl":"https://doi.org/10.1109/IWCE.2014.6865825","url":null,"abstract":"The electron spin properties in semiconductors are of great interest because of their potential in future spin-driven microelectronic devices. We performed simulations on electron spin injection in an n-doped silicon bar from a magnetic semiconductor with spin-dependent conductivity. A variation of doping can introduce charge accumulation/depletion layer at the interface. We found substantial spin transport differences, when spins are introduced through a charge accumulated and a charge depleted interface layer. Special attention is paid to a possible spin injection efficiency enhancement compared to the existing theory at the charge neutrality condition. We found that at a fixed bulk spin polarization, the efficiency increases, if spins are injected from a charge depleted source.","PeriodicalId":168149,"journal":{"name":"2014 International Workshop on Computational Electronics (IWCE)","volume":"565 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116203639","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Multi-scale simulations of metal-semiconductor contacts for nano-MOSFETs 纳米mosfet金属-半导体触点的多尺度模拟
2014 International Workshop on Computational Electronics (IWCE) Pub Date : 2014-06-03 DOI: 10.1109/IWCE.2014.6865836
M. Aldegunde, K. Kalna, S. Hepplestone, P. Sushko
{"title":"Multi-scale simulations of metal-semiconductor contacts for nano-MOSFETs","authors":"M. Aldegunde, K. Kalna, S. Hepplestone, P. Sushko","doi":"10.1109/IWCE.2014.6865836","DOIUrl":"https://doi.org/10.1109/IWCE.2014.6865836","url":null,"abstract":"Multi-scale modelling of the electron transport via a metal-semiconductor interface is carried out by coupling ab initio calculations (DFT) with three-dimensional finite element ensemble Monte Carlo simulations. The results for the Mo/GaAs (001) interface show that variations of the electronic properties with the distance from the interface have a strong impact on the transport characteristics. In particular, the band gap narrowing near the interface lowers the interface resistivity by more than one order of magnitude with respect to that calculated for the idealised Schottky contact: from 2.1×10<sup>-8</sup> Ω·cm<sup>2</sup> to 4.7×10<sup>-10</sup> Ω·cm<sup>2</sup>.","PeriodicalId":168149,"journal":{"name":"2014 International Workshop on Computational Electronics (IWCE)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129049881","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Towards ab-initio simulations of nanowire field-effect transistors 纳米线场效应晶体管的从头算模拟
2014 International Workshop on Computational Electronics (IWCE) Pub Date : 2014-06-03 DOI: 10.1109/IWCE.2014.6865831
S. Bruck, M. Calderara, M. H. Bani-Hashemian, J. VandeVondele, M. Luisier
{"title":"Towards ab-initio simulations of nanowire field-effect transistors","authors":"S. Bruck, M. Calderara, M. H. Bani-Hashemian, J. VandeVondele, M. Luisier","doi":"10.1109/IWCE.2014.6865831","DOIUrl":"https://doi.org/10.1109/IWCE.2014.6865831","url":null,"abstract":"An atomistic quantum transport simulator based on density functional theory is presented in this paper. It employs CP2K for the construction of the Hamiltonian and overlap matrices. The electron density and current in the conduction band is computed by solving a wave function equation using a sparse linear solver. To determine the open boundary conditions, a highly efficient extension of the parallel FEAST algorithm has been implemented. As an application, a Si NWFET consisting of more than 10,000 atoms has been simulated.","PeriodicalId":168149,"journal":{"name":"2014 International Workshop on Computational Electronics (IWCE)","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128910360","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Calculation of electron-phonon interaction strength from first principles in graphene and silicon 石墨烯和硅中电子-声子相互作用强度的第一性原理计算
2014 International Workshop on Computational Electronics (IWCE) Pub Date : 2014-06-03 DOI: 10.1109/IWCE.2014.6865830
W. Vandenberghe, M. Fischetti
{"title":"Calculation of electron-phonon interaction strength from first principles in graphene and silicon","authors":"W. Vandenberghe, M. Fischetti","doi":"10.1109/IWCE.2014.6865830","DOIUrl":"https://doi.org/10.1109/IWCE.2014.6865830","url":null,"abstract":"The calculation of electron-phonon interaction from first principles has recently become feasible using density-functional perturbation theory (Quantum Espresso) [1] and the small displacement method (GPAW) [2]. We determine the strength of the electron-phonon interaction using the Vienna Ab-Initio Simulation Program (VASP) [3] with the small displacement method using PHONOPY [4]. We illustrate our approach using graphene and calculate the interband deformation potentials for bulk Si relevant for Band-to-Band Tunneling (BTBT).","PeriodicalId":168149,"journal":{"name":"2014 International Workshop on Computational Electronics (IWCE)","volume":"95 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114238813","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Impact of lateral doping profiles on ultra-scaled Trigate FinFETs 横向掺杂分布对超尺度三门finfet的影响
2014 International Workshop on Computational Electronics (IWCE) Pub Date : 2014-06-03 DOI: 10.1109/IWCE.2014.6865874
R. Valin, M. Aldegunde, A. Martinez, J. Barker
{"title":"Impact of lateral doping profiles on ultra-scaled Trigate FinFETs","authors":"R. Valin, M. Aldegunde, A. Martinez, J. Barker","doi":"10.1109/IWCE.2014.6865874","DOIUrl":"https://doi.org/10.1109/IWCE.2014.6865874","url":null,"abstract":"The implementation of lateral doping profiles on quantum transport simulations of ultra-scaled transistors will affect their electrical characteristics. This work presents a systematic study of the impact of lateral doping profiles when the gate length of silicon Trigate FinFETs is scaled down from 6.6 nm to 5.4 nm.","PeriodicalId":168149,"journal":{"name":"2014 International Workshop on Computational Electronics (IWCE)","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122390112","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Implications of the coherence length on the discrete Wigner potential 相干长度对离散维格纳势的影响
2014 International Workshop on Computational Electronics (IWCE) Pub Date : 2014-06-03 DOI: 10.1109/IWCE.2014.6865852
P. Ellinghaus, M. Nedjalkov, S. Selberherr
{"title":"Implications of the coherence length on the discrete Wigner potential","authors":"P. Ellinghaus, M. Nedjalkov, S. Selberherr","doi":"10.1109/IWCE.2014.6865852","DOIUrl":"https://doi.org/10.1109/IWCE.2014.6865852","url":null,"abstract":"The solution of the Wigner equation, using the Monte Carlo method [1] along with the signed-particle technique [2], requires a finite coherence length to be chosen. We investigate how the choice of the coherence length influences computational aspects of the calculation of the Wigner potential, like momentum resolution. Additionally, the physical interpretation attributed to a chosen coherence length is discussed.","PeriodicalId":168149,"journal":{"name":"2014 International Workshop on Computational Electronics (IWCE)","volume":"105 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124740180","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
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