横向掺杂分布对超尺度三门finfet的影响

2014 International Workshop on Computational Electronics (IWCE) Pub Date : 2014-06-03 DOI:10.1109/IWCE.2014.6865874

R. Valin, M. Aldegunde, A. Martinez, J. Barker

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引用次数: 1

摘要

在超大尺寸晶体管的量子输运模拟中，横向掺杂谱线的实现将影响其电学特性。本论文系统地研究了当硅三栅finfet栅极长度从6.6 nm缩小到5.4 nm时，横向掺杂分布的影响。

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Impact of lateral doping profiles on ultra-scaled Trigate FinFETs

The implementation of lateral doping profiles on quantum transport simulations of ultra-scaled transistors will affect their electrical characteristics. This work presents a systematic study of the impact of lateral doping profiles when the gate length of silicon Trigate FinFETs is scaled down from 6.6 nm to 5.4 nm.

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来源期刊

2014 International Workshop on Computational Electronics (IWCE)

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