太赫兹氮化镓分布转移电子器件的二维Maxwell/输运时域建模

2014 International Workshop on Computational Electronics (IWCE) Pub Date : 2014-06-03 DOI:10.1109/IWCE.2014.6865861

C. Dalle, F. Dessenne, J. Thobel

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引用次数: 3

摘要

为了研究分布式半导体器件的高频工作，我们正在开发一个二维/三维时域电磁物理模拟器。它是建立在麦克斯韦方程组和自由载流子宏观守恒方程组的自洽解的基础上的，这些守恒方程组是由玻尔兹曼一般输运方程提出的。目前，GaN太赫兹分布式转移电子器件(TED)是其最大的潜在应用领域。

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2D Maxwell/transport time domain modeling of THz GaN distributed transferred electron device

In order to investigate the distributed semiconductor device high frequency operation, we are developing a 2D/3D time-domain electromagnetic physical simulator. It is based on a self-consistent solution of both the Maxwell equations and the free carrier macroscopic conservation equation sets issued from the Boltzmann general transport equation. Its large potential application field presently concerns the GaN THz distributed Transferred Electron Device (TED).

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来源期刊

2014 International Workshop on Computational Electronics (IWCE)

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