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2014 International Workshop on Computational Electronics (IWCE)最新文献

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Simplified evaluation of the electrostatic effect of gate voltages on a graphene layer 栅极电压对石墨烯层静电效应的简化评价
2014 International Workshop on Computational Electronics (IWCE) Pub Date : 2014-06-03 DOI: 10.1109/IWCE.2014.6865818
P. Marconcini, M. Macucci
{"title":"Simplified evaluation of the electrostatic effect of gate voltages on a graphene layer","authors":"P. Marconcini, M. Macucci","doi":"10.1109/IWCE.2014.6865818","DOIUrl":"https://doi.org/10.1109/IWCE.2014.6865818","url":null,"abstract":"We present a numerical method which allows an approximate but fast computation of the potential profile in a graphene sample subject to the electrostatic action of biased gates, including the effect of different contributions, such as those from doping or from charged impurities. The procedure is applied to the evaluation of the effect of a biased probe, coupled to the graphene flake through a space-dependent geometrical capacitance, for two realistic potential landscapes, corresponding to a series of tunnel barriers and to a disordered sample.","PeriodicalId":168149,"journal":{"name":"2014 International Workshop on Computational Electronics (IWCE)","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131984461","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Metamorphosis of a nano wire: A 3-D coupled mode space NEGF study 纳米线的变形:三维耦合模式空间NEGF研究
2014 International Workshop on Computational Electronics (IWCE) Pub Date : 2014-06-03 DOI: 10.1109/IWCE.2014.6865854
S. Amoroso, V. Georgiev, E. Towie, C. Riddet, A. Asenov
{"title":"Metamorphosis of a nano wire: A 3-D coupled mode space NEGF study","authors":"S. Amoroso, V. Georgiev, E. Towie, C. Riddet, A. Asenov","doi":"10.1109/IWCE.2014.6865854","DOIUrl":"https://doi.org/10.1109/IWCE.2014.6865854","url":null,"abstract":"In this paper we present a 3D coupled mode space NEGF study of the quantum features of a nanoscale Gate-AU-Around (GAA) silicon transistor. The bottom oxide of the structure is parameterized in order to progressively transform the nanowire in a tri-gate FinFET and the electron transport studied for several Fin widths, back-biases voltages and electron effective masses. Moreover, we address in detail the treatment of the boundary conditions at the channel interface to model the wave function penetration into the gate oxide. We report quantitative results of the charge density obtained by a simplified and a complete discretization approach.","PeriodicalId":168149,"journal":{"name":"2014 International Workshop on Computational Electronics (IWCE)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115307062","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Gunn Effect in n-InP MOSFET at positive gate bias and impact ionization conditions 正栅极偏置和冲击电离条件下n-InP MOSFET的Gunn效应
2014 International Workshop on Computational Electronics (IWCE) Pub Date : 2014-06-03 DOI: 10.1109/IWCE.2014.6865870
V. Gruzinskis, E. Starikov, P. Shiktorov, H. Marinchio, J. Torres, C. Palermo, L. Varani
{"title":"Gunn Effect in n-InP MOSFET at positive gate bias and impact ionization conditions","authors":"V. Gruzinskis, E. Starikov, P. Shiktorov, H. Marinchio, J. Torres, C. Palermo, L. Varani","doi":"10.1109/IWCE.2014.6865870","DOIUrl":"https://doi.org/10.1109/IWCE.2014.6865870","url":null,"abstract":"In modern FET/HEMT structures the Gunn-effect is not usually considered as one of the mechanisms able to realize high-frequency (near terahertz (THz)) oscillations of the current. Physically, the effect is caused by the suppression effect of the remote Coulomb interaction which takes place in the gated region of the conducting channel. In the present work we propose a way to overcome this limitation by using the impact ionization effect. It is shown by Monte Carlo simulation that the impact ionization in MOSFET structures allows us to get near THz oscillations.","PeriodicalId":168149,"journal":{"name":"2014 International Workshop on Computational Electronics (IWCE)","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114681486","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
System-dependent modified becke-Johnson exchange for quantum transport simulations 量子输运模拟中系统相关的修正becke-Johnson交换
2014 International Workshop on Computational Electronics (IWCE) Pub Date : 2014-06-03 DOI: 10.1109/IWCE.2014.6865841
D. Areshkin, M. Luisier
{"title":"System-dependent modified becke-Johnson exchange for quantum transport simulations","authors":"D. Areshkin, M. Luisier","doi":"10.1109/IWCE.2014.6865841","DOIUrl":"https://doi.org/10.1109/IWCE.2014.6865841","url":null,"abstract":"A possibility to combine the meta-GGA exchange functional suggested by Tran and Blaha with the LDA pseudopotentials was investigated and a simple extension allowing for the direct reduction of the band gap error was suggested. A set of 19 semiconducting materials was used for testing. The mean absolute value of the relative band gap error was found to be 2.5 times larger than in the case when meta-GGA exchange employs the full-core electron density. The main contribution to the mean error comes from the few materials showing weak response to meta-GGA band gap tuning parameter. At the same time, if the smaller subgroups of semiconductors are used, the extended parameterization presented in the current work allows for the band gap fits within few percent. Such material subgroups can be used to obtain the device-specific meta-GGA parameterizations with a minimal computational effort.","PeriodicalId":168149,"journal":{"name":"2014 International Workshop on Computational Electronics (IWCE)","volume":"62 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128489296","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Two-dimensional self-consistent simulation on program/retention operation of charge trapping memory 电荷捕获存储器程序/保留操作的二维自洽模拟
2014 International Workshop on Computational Electronics (IWCE) Pub Date : 2014-06-03 DOI: 10.1109/IWCE.2014.6865833
Z. Lun, Shuhuan Liu, K. Zhao, G. Du, Yi Wang, Xiaoyan Liu
{"title":"Two-dimensional self-consistent simulation on program/retention operation of charge trapping memory","authors":"Z. Lun, Shuhuan Liu, K. Zhao, G. Du, Yi Wang, Xiaoyan Liu","doi":"10.1109/IWCE.2014.6865833","DOIUrl":"https://doi.org/10.1109/IWCE.2014.6865833","url":null,"abstract":"This paper presents a two dimensional numerical simulation on the program and retention operation of charge trapping memory. The developed simulator self-consistently solves two-dimensional Poisson equation, carrier continuity equation and trapped charge conservation equation. Drift-diffusion transport scheme is used for modeling the charge transport in the trapping layer. Major physical models, such as, direct, band-to-trap, trap-to-band tunneling and carrier capture and emission are incorporated into the simulator. The numerical simulation is able to study the programming and retention performance of charge trapping memory under different temperatures two-dimensionally. The simulation aims to investigate memory devices in scaled structures and especially in 3D applications.","PeriodicalId":168149,"journal":{"name":"2014 International Workshop on Computational Electronics (IWCE)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129374885","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
On the back-action of THz measurement on the total current of quantum devices 太赫兹测量对量子器件总电流的反作用
2014 International Workshop on Computational Electronics (IWCE) Pub Date : 2014-06-03 DOI: 10.1109/IWCE.2014.6865844
D. Marian, N. Zanghí, X. Oriols
{"title":"On the back-action of THz measurement on the total current of quantum devices","authors":"D. Marian, N. Zanghí, X. Oriols","doi":"10.1109/IWCE.2014.6865844","DOIUrl":"https://doi.org/10.1109/IWCE.2014.6865844","url":null,"abstract":"Measuring a quantum system implies some kind of perturbation of the system itself. A novel approach to include the perturbation of the quantum electron device, i.e. the back-action, due to the TeraHertz (THz) measurement of the total current is presented. The approach is based on a microscopic description of the interaction between the quantum system and the measuring apparatus, in terms of conditional (Bohmian) wave functions. The disturbance of the quantum system due to measurements at THz frequencies and the (perturbed) value of the total current is numerically computed for a simple two-terminal device. Contrarily to traditional strong (i.e. projective) measurements, it is shown that the measurement of the total current at THz frequencies can be modeled by a weak measurement. An additional unavoidable source of fluctuations of the current is predicted at THz frequencies due to the back-action (i.e. the quantum measurement).","PeriodicalId":168149,"journal":{"name":"2014 International Workshop on Computational Electronics (IWCE)","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125952228","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Towards a multiscale modeling framework for metal-CNT interfaces 金属-碳纳米管界面的多尺度建模框架
2014 International Workshop on Computational Electronics (IWCE) Pub Date : 2014-06-03 DOI: 10.1109/IWCE.2014.6865837
M. Claus, A. Fediai, S. Mothes, Joachim Knoch, D. Ryndyk, S. Blawid, G. Cuniberti, Michael Schroter
{"title":"Towards a multiscale modeling framework for metal-CNT interfaces","authors":"M. Claus, A. Fediai, S. Mothes, Joachim Knoch, D. Ryndyk, S. Blawid, G. Cuniberti, Michael Schroter","doi":"10.1109/IWCE.2014.6865837","DOIUrl":"https://doi.org/10.1109/IWCE.2014.6865837","url":null,"abstract":"This paper gives a short overview on our recent investigations towards a multiscale modeling and simulation framework for metal-CNT interfaces. We employ three simulation approaches with well defined interfaces. For the simulation at device level we make use of a recently developed wave-function based effective-mass Schrödinger-Poisson solver which employs a hetero-junction like contact model to capture the physics in the contact region where the CNT is embedded into metal. The required model parameters are adjusted to TB and DFT simulation results. A comparison with experimental data for a short channel device shows the applicability of the proposed approach.","PeriodicalId":168149,"journal":{"name":"2014 International Workshop on Computational Electronics (IWCE)","volume":"94 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125552692","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
Frequency-dependent shot noise in single-electron devices 单电子器件中与频率相关的散粒噪声
2014 International Workshop on Computational Electronics (IWCE) Pub Date : 2014-06-03 DOI: 10.1109/IWCE.2014.6865843
V. Talbo, J. Mateos, S. Retailleau, P. Dollfus, T. González
{"title":"Frequency-dependent shot noise in single-electron devices","authors":"V. Talbo, J. Mateos, S. Retailleau, P. Dollfus, T. González","doi":"10.1109/IWCE.2014.6865843","DOIUrl":"https://doi.org/10.1109/IWCE.2014.6865843","url":null,"abstract":"The simulation of a double-tunnel junction with the SENS simulator gives access to the frequency-dependent and static behavior of shot noise. The concept of basic paths in a multi-state process provides a clear interpretation of the noise regimes, and allows locating cut-offs in autocorrelation functions and spectral densities.","PeriodicalId":168149,"journal":{"name":"2014 International Workshop on Computational Electronics (IWCE)","volume":"426 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122465233","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Uncovering the temperature of the hotspot in nanoscale devices 揭示纳米器件中热点的温度
2014 International Workshop on Computational Electronics (IWCE) Pub Date : 2014-06-03 DOI: 10.1109/IWCE.2014.6865840
K. Raleva, E. Bury, B. Kaczer, D. Vasileska
{"title":"Uncovering the temperature of the hotspot in nanoscale devices","authors":"K. Raleva, E. Bury, B. Kaczer, D. Vasileska","doi":"10.1109/IWCE.2014.6865840","DOIUrl":"https://doi.org/10.1109/IWCE.2014.6865840","url":null,"abstract":"We present for the first time multi-scale modeling of self-heating effects in conventional MOSFET devices in a common-source and common-drain configurations in which one of the devices is the device under test (DUT) and the other device is the sensor. Via comparisons to experimental measurements performed at IMEC, we are able to uncover the temperature of the hot spot. This is also the first study in which a circuit with two transistors is being simulated using thermal particle-based device simulations.","PeriodicalId":168149,"journal":{"name":"2014 International Workshop on Computational Electronics (IWCE)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124990242","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Quantum simulation of self-heating effects in rough Si nanowire FETs 粗糙硅纳米线场效应管自热效应的量子模拟
2014 International Workshop on Computational Electronics (IWCE) Pub Date : 2014-06-03 DOI: 10.1109/IWCE.2014.6865827
M. Pala, A. Cresti
{"title":"Quantum simulation of self-heating effects in rough Si nanowire FETs","authors":"M. Pala, A. Cresti","doi":"10.1109/IWCE.2014.6865827","DOIUrl":"https://doi.org/10.1109/IWCE.2014.6865827","url":null,"abstract":"We present a quantum approach to simulate self-heating effects in transistors based on silicon nanowires and estimate the resulting performance degradation. Our self-consistent thermoelectric simulations are based on the nonequilibrium Green's function approach and provide the heat power transferred from electrons to phonons, thus allowing the calculation of the local temperature and its impact on the transistor output characteristics. We apply our approach to the simulation of a tri-gate transistor with a 14 nm channel length in the presence of surface roughness. Our results clearly indicate that self-heating effects are enhanced by surface roughness, with important consequences on the on-current of the device.","PeriodicalId":168149,"journal":{"name":"2014 International Workshop on Computational Electronics (IWCE)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123111330","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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