量子输运模拟中系统相关的修正becke-Johnson交换

D. Areshkin, M. Luisier
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引用次数: 0

摘要

研究了将Tran和Blaha提出的meta-GGA交换泛函与LDA伪势结合起来的可能性,并提出了一种允许直接减小带隙误差的简单扩展。测试采用了19种半导体材料。相对带隙误差的平均绝对值比采用全芯电子密度时大2.5倍。对平均误差的主要贡献来自少数材料对meta-GGA带隙调谐参数的弱响应。同时,如果使用较小的半导体子组,则当前工作中提出的扩展参数化允许带隙拟合在几个百分点之内。这样的材料子组可用于以最小的计算量获得特定于设备的meta-GGA参数化。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
System-dependent modified becke-Johnson exchange for quantum transport simulations
A possibility to combine the meta-GGA exchange functional suggested by Tran and Blaha with the LDA pseudopotentials was investigated and a simple extension allowing for the direct reduction of the band gap error was suggested. A set of 19 semiconducting materials was used for testing. The mean absolute value of the relative band gap error was found to be 2.5 times larger than in the case when meta-GGA exchange employs the full-core electron density. The main contribution to the mean error comes from the few materials showing weak response to meta-GGA band gap tuning parameter. At the same time, if the smaller subgroups of semiconductors are used, the extended parameterization presented in the current work allows for the band gap fits within few percent. Such material subgroups can be used to obtain the device-specific meta-GGA parameterizations with a minimal computational effort.
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