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Gallium Nitride Materials and Devices XVII最新文献

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Suppression of c-plane emission in GaInN/GaN multiquantum shells/nanowires for efficient LEDs 高效led用GaInN/GaN多量子壳层/纳米线c面发射抑制
Gallium Nitride Materials and Devices XVII Pub Date : 2022-03-07 DOI: 10.1117/12.2608186
Sae Katsuro, Weifang Lu, N. Sone, Kazuma Ito, Nanami Nakayama, Renji Okuda, Yoshiya Miyamoto, Yukimi Jinno, S. Yamamura, M. Iwaya, T. Takeuchi, S. Kamiyama
{"title":"Suppression of c-plane emission in GaInN/GaN multiquantum shells/nanowires for efficient LEDs","authors":"Sae Katsuro, Weifang Lu, N. Sone, Kazuma Ito, Nanami Nakayama, Renji Okuda, Yoshiya Miyamoto, Yukimi Jinno, S. Yamamura, M. Iwaya, T. Takeuchi, S. Kamiyama","doi":"10.1117/12.2608186","DOIUrl":"https://doi.org/10.1117/12.2608186","url":null,"abstract":"","PeriodicalId":167554,"journal":{"name":"Gallium Nitride Materials and Devices XVII","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124288179","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
InGaN blue light-emitting micro-diodes with current path defined by tunnel junction 电流路径由隧道结定义的InGaN蓝色发光微二极管
Gallium Nitride Materials and Devices XVII Pub Date : 2022-03-05 DOI: 10.1117/12.2609763
K. Gibasiewicz, Agata Bojarska-Cieślińska, G. Muzioł, C. Skierbiszewski, S. Grzanka, A. Kafar, P. Perlin, S. Najda, T. Suski, L. Marona
{"title":"InGaN blue light-emitting micro-diodes with current path defined by tunnel junction","authors":"K. Gibasiewicz, Agata Bojarska-Cieślińska, G. Muzioł, C. Skierbiszewski, S. Grzanka, A. Kafar, P. Perlin, S. Najda, T. Suski, L. Marona","doi":"10.1117/12.2609763","DOIUrl":"https://doi.org/10.1117/12.2609763","url":null,"abstract":"","PeriodicalId":167554,"journal":{"name":"Gallium Nitride Materials and Devices XVII","volume":"346 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120877713","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Polarization doping in blue-violet nitride emitters 蓝紫色氮化物发射体的极化掺杂
Gallium Nitride Materials and Devices XVII Pub Date : 2022-03-05 DOI: 10.1117/12.2607627
Muhammed Aktaş, D. Schiavon, A. Kafar, S. Stanczyk, K. Gibasiewicz, S. Grzanka, P. Perlin
{"title":"Polarization doping in blue-violet nitride emitters","authors":"Muhammed Aktaş, D. Schiavon, A. Kafar, S. Stanczyk, K. Gibasiewicz, S. Grzanka, P. Perlin","doi":"10.1117/12.2607627","DOIUrl":"https://doi.org/10.1117/12.2607627","url":null,"abstract":"","PeriodicalId":167554,"journal":{"name":"Gallium Nitride Materials and Devices XVII","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125730324","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
MOVPE-grown GaN-based tunnel junctions and optoelectronic devices movpe生长的gan隧道结和光电子器件
Gallium Nitride Materials and Devices XVII Pub Date : 2022-03-05 DOI: 10.1117/12.2608422
T. Takeuchi, S. Kamiyama, M. Iwaya
{"title":"MOVPE-grown GaN-based tunnel junctions and optoelectronic devices","authors":"T. Takeuchi, S. Kamiyama, M. Iwaya","doi":"10.1117/12.2608422","DOIUrl":"https://doi.org/10.1117/12.2608422","url":null,"abstract":"","PeriodicalId":167554,"journal":{"name":"Gallium Nitride Materials and Devices XVII","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115552945","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Al0.6Ga0.4N p-i-n deep-ultraviolet avalanche photodiodes 深紫外雪崩光电二极管
Gallium Nitride Materials and Devices XVII Pub Date : 2022-03-05 DOI: 10.1117/12.2608330
R. Dupuis, Hoon Jeong, Minkyu Cho, Zhiyu Xu, S. Shen, T. Detchprohm, A. Otte
{"title":"Al0.6Ga0.4N p-i-n deep-ultraviolet avalanche photodiodes","authors":"R. Dupuis, Hoon Jeong, Minkyu Cho, Zhiyu Xu, S. Shen, T. Detchprohm, A. Otte","doi":"10.1117/12.2608330","DOIUrl":"https://doi.org/10.1117/12.2608330","url":null,"abstract":"","PeriodicalId":167554,"journal":{"name":"Gallium Nitride Materials and Devices XVII","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128668807","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Examination of silicon diffusion in GaN 氮化镓中硅扩散的研究
Gallium Nitride Materials and Devices XVII Pub Date : 2022-03-05 DOI: 10.1117/12.2607583
M. Iwinska, P. Prystawko, A. Taube, K. Sierakowski, R. Jakieła, M. Boćkowski
{"title":"Examination of silicon diffusion in GaN","authors":"M. Iwinska, P. Prystawko, A. Taube, K. Sierakowski, R. Jakieła, M. Boćkowski","doi":"10.1117/12.2607583","DOIUrl":"https://doi.org/10.1117/12.2607583","url":null,"abstract":"","PeriodicalId":167554,"journal":{"name":"Gallium Nitride Materials and Devices XVII","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117199134","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Toward highly efficient p-doping in III-nitride optoelectronics: MOCVD growth of Be-doped GaN 面向iii -氮化物光电子学中高效p掺杂:be掺杂GaN的MOCVD生长
Gallium Nitride Materials and Devices XVII Pub Date : 2022-03-05 DOI: 10.1117/12.2626491
B. McEwen, M. Reshchikov, E. Rocco, V. Meyers, K. Hogan, O. Andrieiev, M. Vorobiov, D. Demchenko, Shadi Shahedipour-Sandvik
{"title":"Toward highly efficient p-doping in III-nitride optoelectronics: MOCVD growth of Be-doped GaN","authors":"B. McEwen, M. Reshchikov, E. Rocco, V. Meyers, K. Hogan, O. Andrieiev, M. Vorobiov, D. Demchenko, Shadi Shahedipour-Sandvik","doi":"10.1117/12.2626491","DOIUrl":"https://doi.org/10.1117/12.2626491","url":null,"abstract":"","PeriodicalId":167554,"journal":{"name":"Gallium Nitride Materials and Devices XVII","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130038693","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Polar-plane-free faceted InGaN polychromatic emitters with fast carrier recombination processes 具有快速载流子复合工艺的无极平面多面InGaN多色发射器
Gallium Nitride Materials and Devices XVII Pub Date : 2022-03-05 DOI: 10.1117/12.2608556
M. Funato, Y. Matsuda, Y. Kawakami
{"title":"Polar-plane-free faceted InGaN polychromatic emitters with fast carrier recombination processes","authors":"M. Funato, Y. Matsuda, Y. Kawakami","doi":"10.1117/12.2608556","DOIUrl":"https://doi.org/10.1117/12.2608556","url":null,"abstract":"","PeriodicalId":167554,"journal":{"name":"Gallium Nitride Materials and Devices XVII","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132451274","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Optimization of tunnel junction growth on m-plane GaN substrate for multi-quantum shell-based devices 多量子壳基器件在m平面GaN衬底上隧道结生长的优化
Gallium Nitride Materials and Devices XVII Pub Date : 2022-03-05 DOI: 10.1117/12.2608402
S. Yamamura, Yoshiya Miyamoto, N. Sone, Weifang Lu, Renji Okuda, Kazuma Ito, Yukimi Jinno, Nanami Nakayama, Sae Katsuro, S. Kamiyama, T. Takeuchi, M. Iwaya
{"title":"Optimization of tunnel junction growth on m-plane GaN substrate for multi-quantum shell-based devices","authors":"S. Yamamura, Yoshiya Miyamoto, N. Sone, Weifang Lu, Renji Okuda, Kazuma Ito, Yukimi Jinno, Nanami Nakayama, Sae Katsuro, S. Kamiyama, T. Takeuchi, M. Iwaya","doi":"10.1117/12.2608402","DOIUrl":"https://doi.org/10.1117/12.2608402","url":null,"abstract":"","PeriodicalId":167554,"journal":{"name":"Gallium Nitride Materials and Devices XVII","volume":"66 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133512456","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Out of the blue: UV VCSELs 出乎意料的是:UV VCSELs
Gallium Nitride Materials and Devices XVII Pub Date : 2022-03-05 DOI: 10.1117/12.2612378
Å. Haglund, F. Hjort, J. Enslin, M. Bergmann, M. Cobet, G. Cardinali, N. Prokop, Lars Persson, T. Kolbe, Johan Gustavsson, J. Ciers, T. Wernicke, M. Kneissl
{"title":"Out of the blue: UV VCSELs","authors":"Å. Haglund, F. Hjort, J. Enslin, M. Bergmann, M. Cobet, G. Cardinali, N. Prokop, Lars Persson, T. Kolbe, Johan Gustavsson, J. Ciers, T. Wernicke, M. Kneissl","doi":"10.1117/12.2612378","DOIUrl":"https://doi.org/10.1117/12.2612378","url":null,"abstract":"","PeriodicalId":167554,"journal":{"name":"Gallium Nitride Materials and Devices XVII","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128264163","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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