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Gallium Nitride Materials and Devices XVII最新文献

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High responsivity and fast response Pt:p-AlGaN nanowire-based self-power solar-blind photodetector 基于Pt:p-AlGaN纳米线的高响应和快速响应自供电太阳盲光电探测器
Gallium Nitride Materials and Devices XVII Pub Date : 2022-03-05 DOI: 10.1117/12.2609587
Danhao Wang, Shih-Hao Fang, Yang Kang, Xin Liu, Yuan Luo, Haiding Sun
{"title":"High responsivity and fast response Pt:p-AlGaN nanowire-based self-power solar-blind photodetector","authors":"Danhao Wang, Shih-Hao Fang, Yang Kang, Xin Liu, Yuan Luo, Haiding Sun","doi":"10.1117/12.2609587","DOIUrl":"https://doi.org/10.1117/12.2609587","url":null,"abstract":"","PeriodicalId":167554,"journal":{"name":"Gallium Nitride Materials and Devices XVII","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127277182","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Nitride superluminescent diodes and semiconductor optical amplifiers: recent progress and optimization 氮化超发光二极管和半导体光放大器:最新进展和优化
Gallium Nitride Materials and Devices XVII Pub Date : 2022-03-05 DOI: 10.1117/12.2605371
A. Kafar, S. Stanczyk, D. Schiavon, P. Perlin
{"title":"Nitride superluminescent diodes and semiconductor optical amplifiers: recent progress and optimization","authors":"A. Kafar, S. Stanczyk, D. Schiavon, P. Perlin","doi":"10.1117/12.2605371","DOIUrl":"https://doi.org/10.1117/12.2605371","url":null,"abstract":"","PeriodicalId":167554,"journal":{"name":"Gallium Nitride Materials and Devices XVII","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123540251","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Growth of relaxed AlGaN layers on native GaN 天然GaN上松弛AlGaN层的生长
Gallium Nitride Materials and Devices XVII Pub Date : 2022-03-05 DOI: 10.1117/12.2606422
R. Kirste, S. Mita, Jordan Almeter, R. Collazo, Z. Sitar
{"title":"Growth of relaxed AlGaN layers on native GaN","authors":"R. Kirste, S. Mita, Jordan Almeter, R. Collazo, Z. Sitar","doi":"10.1117/12.2606422","DOIUrl":"https://doi.org/10.1117/12.2606422","url":null,"abstract":"","PeriodicalId":167554,"journal":{"name":"Gallium Nitride Materials and Devices XVII","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121247969","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Performance improvement of AlGaN-based deep ultraviolet light-emitting diodes with double-side step n-AlGaN inserted layer 双侧阶跃n-AlGaN插入层对algan基深紫外发光二极管性能的改进
Gallium Nitride Materials and Devices XVII Pub Date : 2022-03-05 DOI: 10.1117/12.2609822
Yue Sun, Huabin Yu, Haochen Zhang, M. H. Memon, Danhao Wang, Haiding Sun
{"title":"Performance improvement of AlGaN-based deep ultraviolet light-emitting diodes with double-side step n-AlGaN inserted layer","authors":"Yue Sun, Huabin Yu, Haochen Zhang, M. H. Memon, Danhao Wang, Haiding Sun","doi":"10.1117/12.2609822","DOIUrl":"https://doi.org/10.1117/12.2609822","url":null,"abstract":"","PeriodicalId":167554,"journal":{"name":"Gallium Nitride Materials and Devices XVII","volume":"132 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121625554","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
An AlGaN/GaN-based ultraviolet phototransistors with record-high responsivity for 265-nm and 365-nm detection 一种基于AlGaN/ gan的紫外光电晶体管，具有265 nm和365 nm检测的创纪录高响应率
Gallium Nitride Materials and Devices XVII Pub Date : 2022-03-05 DOI: 10.1117/12.2609728
Haochen Zhang, Huabin Yu, Danhao Wang, Haiding Sun
{"title":"An AlGaN/GaN-based ultraviolet phototransistors with record-high responsivity for 265-nm and 365-nm detection","authors":"Haochen Zhang, Huabin Yu, Danhao Wang, Haiding Sun","doi":"10.1117/12.2609728","DOIUrl":"https://doi.org/10.1117/12.2609728","url":null,"abstract":"","PeriodicalId":167554,"journal":{"name":"Gallium Nitride Materials and Devices XVII","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129601610","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Study of AlxGa1-xN/AlN quantum dots in the whole compositional range as potential sources of far UVC for disinfection 全组成范围内AlxGa1-xN/AlN量子点作为远紫外线消毒潜在源的研究
Gallium Nitride Materials and Devices XVII Pub Date : 2022-03-05 DOI: 10.1117/12.2607614
A. Harikumar, F. Donatini, E. Bellet-Amalric, C. Bougerol, C. Dujardin, S. Purcell, E. Monroy
{"title":"Study of AlxGa1-xN/AlN quantum dots in the whole compositional range as potential sources of far UVC for disinfection","authors":"A. Harikumar, F. Donatini, E. Bellet-Amalric, C. Bougerol, C. Dujardin, S. Purcell, E. Monroy","doi":"10.1117/12.2607614","DOIUrl":"https://doi.org/10.1117/12.2607614","url":null,"abstract":"","PeriodicalId":167554,"journal":{"name":"Gallium Nitride Materials and Devices XVII","volume":"99 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127249538","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Emission uniformity of UVC laser diodes on AlN substrates AlN衬底UVC激光二极管的发射均匀性
Gallium Nitride Materials and Devices XVII Pub Date : 2022-03-05 DOI: 10.1117/12.2604370
M. Kushimoto, Ziyi Zhang, Y. Honda, L. Schowalter, C. Sasaoka, H. Amano
{"title":"Emission uniformity of UVC laser diodes on AlN substrates","authors":"M. Kushimoto, Ziyi Zhang, Y. Honda, L. Schowalter, C. Sasaoka, H. Amano","doi":"10.1117/12.2604370","DOIUrl":"https://doi.org/10.1117/12.2604370","url":null,"abstract":"","PeriodicalId":167554,"journal":{"name":"Gallium Nitride Materials and Devices XVII","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129482956","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Photonic integrated structures for room-temperature single-photon emitters in gallium nitride 氮化镓室温单光子发射体的光子集成结构
Gallium Nitride Materials and Devices XVII Pub Date : 2022-03-05 DOI: 10.1117/12.2608175
Max Meunier, Mu Zhao, Zhengzhi Jiang, S. Chenot, P. de Mierry, M. Leroux, O. Alibart, Wei‐bo Gao, J. Zuniga Perez
{"title":"Photonic integrated structures for room-temperature single-photon emitters in gallium nitride","authors":"Max Meunier, Mu Zhao, Zhengzhi Jiang, S. Chenot, P. de Mierry, M. Leroux, O. Alibart, Wei‐bo Gao, J. Zuniga Perez","doi":"10.1117/12.2608175","DOIUrl":"https://doi.org/10.1117/12.2608175","url":null,"abstract":"","PeriodicalId":167554,"journal":{"name":"Gallium Nitride Materials and Devices XVII","volume":"98 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117215462","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Porous GaN cladding in edge emitting laser diodes 边缘发射激光二极管中多孔氮化镓包层
Gallium Nitride Materials and Devices XVII Pub Date : 2022-03-05 DOI: 10.1117/12.2610452
Ryan Anderson
{"title":"Porous GaN cladding in edge emitting laser diodes","authors":"Ryan Anderson","doi":"10.1117/12.2610452","DOIUrl":"https://doi.org/10.1117/12.2610452","url":null,"abstract":"","PeriodicalId":167554,"journal":{"name":"Gallium Nitride Materials and Devices XVII","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114358636","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
MOVPE-grown InGaN quantum-well red micro-LEDs 移动生长的InGaN量子阱红色微型led
Gallium Nitride Materials and Devices XVII Pub Date : 2022-03-05 DOI: 10.1117/12.2607886
K. Ohkawa, D. Iida, Zhe Zhuang
{"title":"MOVPE-grown InGaN quantum-well red micro-LEDs","authors":"K. Ohkawa, D. Iida, Zhe Zhuang","doi":"10.1117/12.2607886","DOIUrl":"https://doi.org/10.1117/12.2607886","url":null,"abstract":"","PeriodicalId":167554,"journal":{"name":"Gallium Nitride Materials and Devices XVII","volume":"90 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116049826","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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