Yue Sun, Huabin Yu, Haochen Zhang, M. H. Memon, Danhao Wang, Haiding Sun
{"title":"Performance improvement of AlGaN-based deep ultraviolet light-emitting diodes with double-side step n-AlGaN inserted layer","authors":"Yue Sun, Huabin Yu, Haochen Zhang, M. H. Memon, Danhao Wang, Haiding Sun","doi":"10.1117/12.2609822","DOIUrl":null,"url":null,"abstract":"","PeriodicalId":167554,"journal":{"name":"Gallium Nitride Materials and Devices XVII","volume":"132 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Gallium Nitride Materials and Devices XVII","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.2609822","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
