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Front Matter: Volume 12001 封面:第12001卷
Gallium Nitride Materials and Devices XVII Pub Date : 2022-04-01 DOI: 10.1117/12.2635625
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引用次数: 0
Sputtering growth of n-GaN cap layer on core-shell GaInN/GaN multiquantum shell/nanowires 核壳型GaInN/GaN多量子壳/纳米线上n-GaN帽层的溅射生长
Gallium Nitride Materials and Devices XVII Pub Date : 2022-03-07 DOI: 10.1117/12.2608187
Yukimi Jinno, Renji Okuda, N. Sone, Weifang Lu, Yoshiya Miyamoto, Kazuma Ito, S. Yamamura, Sae Katsuro, Nanami Nakayama, S. Kamiyama, T. Takeuchi, M. Iwaya
{"title":"Sputtering growth of n-GaN cap layer on core-shell GaInN/GaN multiquantum shell/nanowires","authors":"Yukimi Jinno, Renji Okuda, N. Sone, Weifang Lu, Yoshiya Miyamoto, Kazuma Ito, S. Yamamura, Sae Katsuro, Nanami Nakayama, S. Kamiyama, T. Takeuchi, M. Iwaya","doi":"10.1117/12.2608187","DOIUrl":"https://doi.org/10.1117/12.2608187","url":null,"abstract":"","PeriodicalId":167554,"journal":{"name":"Gallium Nitride Materials and Devices XVII","volume":"227 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122652990","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Precise performances of InGaN/GaN-based sidewall emitted light-emitting diodes for ultrathin backlight unit 超薄背光器件中InGaN/ gan基侧壁发光二极管的精确性能
Gallium Nitride Materials and Devices XVII Pub Date : 2022-03-07 DOI: 10.1117/12.2625709
Tae Kyoung Kim, A. H. Islam, Y. Cha, J. Seo, J. Kwak
{"title":"Precise performances of InGaN/GaN-based sidewall emitted light-emitting diodes for ultrathin backlight unit","authors":"Tae Kyoung Kim, A. H. Islam, Y. Cha, J. Seo, J. Kwak","doi":"10.1117/12.2625709","DOIUrl":"https://doi.org/10.1117/12.2625709","url":null,"abstract":"","PeriodicalId":167554,"journal":{"name":"Gallium Nitride Materials and Devices XVII","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128076983","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
AlGaN-based deep ultraviolet micro-LED emitting at 275 nm 发光波长275纳米的深紫外微型led
Gallium Nitride Materials and Devices XVII Pub Date : 2022-03-07 DOI: 10.1117/12.2610442
Huabin Yu, M. H. Memon, Hongfeng Jia, Meng Tian, Danhao Wang, Haiding Sun
{"title":"AlGaN-based deep ultraviolet micro-LED emitting at 275 nm","authors":"Huabin Yu, M. H. Memon, Hongfeng Jia, Meng Tian, Danhao Wang, Haiding Sun","doi":"10.1117/12.2610442","DOIUrl":"https://doi.org/10.1117/12.2610442","url":null,"abstract":"","PeriodicalId":167554,"journal":{"name":"Gallium Nitride Materials and Devices XVII","volume":"84 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124420663","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Development of high-power normally-off p-GaN gate AlGaN/GaN high-electron mobility transistors 高功率常关p-GaN栅极AlGaN/GaN高电子迁移率晶体管的研制
Gallium Nitride Materials and Devices XVII Pub Date : 2022-03-07 DOI: 10.1117/12.2611724
A. Szerling, A. Taube, M. Kamiński, M. Ekielski, Jarosław Tarenko, K. Pągowska, M. Kozubal, K. Kosiel, R. Kruszka, K. Gołaszewska-Malec, E. Brzozowski, N. Kwietniewski, R. Kisiel
{"title":"Development of high-power normally-off p-GaN gate AlGaN/GaN high-electron mobility transistors","authors":"A. Szerling, A. Taube, M. Kamiński, M. Ekielski, Jarosław Tarenko, K. Pągowska, M. Kozubal, K. Kosiel, R. Kruszka, K. Gołaszewska-Malec, E. Brzozowski, N. Kwietniewski, R. Kisiel","doi":"10.1117/12.2611724","DOIUrl":"https://doi.org/10.1117/12.2611724","url":null,"abstract":"","PeriodicalId":167554,"journal":{"name":"Gallium Nitride Materials and Devices XVII","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127773087","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Study of the optical properties of AlGaN/GaN separate confinement heterostructures for low-threshold e-beam pumped UV lasers 低阈值电子束泵浦紫外激光器中AlGaN/GaN分离约束异质结构光学特性的研究
Gallium Nitride Materials and Devices XVII Pub Date : 2022-03-07 DOI: 10.1117/12.2606355
Sergi Cuesta Arcos, Lou Denaix, Q. Thai, E. Bellet-Amalric, C. Bougerol, S. Purcell, L. S. Dang, E. Monroy
{"title":"Study of the optical properties of AlGaN/GaN separate confinement heterostructures for low-threshold e-beam pumped UV lasers","authors":"Sergi Cuesta Arcos, Lou Denaix, Q. Thai, E. Bellet-Amalric, C. Bougerol, S. Purcell, L. S. Dang, E. Monroy","doi":"10.1117/12.2606355","DOIUrl":"https://doi.org/10.1117/12.2606355","url":null,"abstract":"","PeriodicalId":167554,"journal":{"name":"Gallium Nitride Materials and Devices XVII","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124230122","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The performance of InGaN-based red/green micro-LEDs 基于ingan的红/绿微型led的性能
Gallium Nitride Materials and Devices XVII Pub Date : 2022-03-07 DOI: 10.1117/12.2610287
Zhe Zhuang, D. Iida, Martin Velazquez-Rizo, K. Ohkawa
{"title":"The performance of InGaN-based red/green micro-LEDs","authors":"Zhe Zhuang, D. Iida, Martin Velazquez-Rizo, K. Ohkawa","doi":"10.1117/12.2610287","DOIUrl":"https://doi.org/10.1117/12.2610287","url":null,"abstract":"","PeriodicalId":167554,"journal":{"name":"Gallium Nitride Materials and Devices XVII","volume":"99 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125973104","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Threshold temperature in annihilation radius of dislocation for AlN AlN位错湮没半径的阈温度
Gallium Nitride Materials and Devices XVII Pub Date : 2022-03-07 DOI: 10.1117/12.2607569
Shota Tsuda, Takumi Miyagawa, R. Aono, A. Tomita, H. Hirayama, Y. Takashima, Y. Naoi, K. Nagamatsu
{"title":"Threshold temperature in annihilation radius of dislocation for AlN","authors":"Shota Tsuda, Takumi Miyagawa, R. Aono, A. Tomita, H. Hirayama, Y. Takashima, Y. Naoi, K. Nagamatsu","doi":"10.1117/12.2607569","DOIUrl":"https://doi.org/10.1117/12.2607569","url":null,"abstract":"","PeriodicalId":167554,"journal":{"name":"Gallium Nitride Materials and Devices XVII","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130555156","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Improvement of crystal orientation in AlN with controlled inversion domain 利用可控反转畴改善AlN晶体取向
Gallium Nitride Materials and Devices XVII Pub Date : 2022-03-07 DOI: 10.1117/12.2607577
Shota Tsuda, Takumi Miyagawa, R. Aono, A. Tomita, H. Hirayama, Y. Takashima, Y. Naoi, K. Nagamatsu
{"title":"Improvement of crystal orientation in AlN with controlled inversion domain","authors":"Shota Tsuda, Takumi Miyagawa, R. Aono, A. Tomita, H. Hirayama, Y. Takashima, Y. Naoi, K. Nagamatsu","doi":"10.1117/12.2607577","DOIUrl":"https://doi.org/10.1117/12.2607577","url":null,"abstract":"","PeriodicalId":167554,"journal":{"name":"Gallium Nitride Materials and Devices XVII","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126990012","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High quality MBE-grown GaN p-n nanowires and their carrier transport control for photoelectrochemical ultraviolet photodetection 高质量mbe生长GaN - p-n纳米线及其光电化学紫外光探测载流子输运控制
Gallium Nitride Materials and Devices XVII Pub Date : 2022-03-07 DOI: 10.1117/12.2605967
Shih-Hao Fang, Danhao Wang, Haiding Sun
{"title":"High quality MBE-grown GaN p-n nanowires and their carrier transport control for photoelectrochemical ultraviolet photodetection","authors":"Shih-Hao Fang, Danhao Wang, Haiding Sun","doi":"10.1117/12.2605967","DOIUrl":"https://doi.org/10.1117/12.2605967","url":null,"abstract":"","PeriodicalId":167554,"journal":{"name":"Gallium Nitride Materials and Devices XVII","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122776103","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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