A. Szerling, A. Taube, M. Kamiński, M. Ekielski, Jarosław Tarenko, K. Pągowska, M. Kozubal, K. Kosiel, R. Kruszka, K. Gołaszewska-Malec, E. Brzozowski, N. Kwietniewski, R. Kisiel
{"title":"Development of high-power normally-off p-GaN gate AlGaN/GaN high-electron mobility transistors","authors":"A. Szerling, A. Taube, M. Kamiński, M. Ekielski, Jarosław Tarenko, K. Pągowska, M. Kozubal, K. Kosiel, R. Kruszka, K. Gołaszewska-Malec, E. Brzozowski, N. Kwietniewski, R. Kisiel","doi":"10.1117/12.2611724","DOIUrl":null,"url":null,"abstract":"","PeriodicalId":167554,"journal":{"name":"Gallium Nitride Materials and Devices XVII","volume":"46 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Gallium Nitride Materials and Devices XVII","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.2611724","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}