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Gallium Nitride Materials and Devices XVII最新文献

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High Al mole fraction crack-free AlGaN on GaN for UV laser diodes by a non-planar growth approach 用非平面生长方法制备紫外激光二极管用高Al摩尔分数无裂纹的AlGaN
Gallium Nitride Materials and Devices XVII Pub Date : 2022-03-05 DOI: 10.1117/12.2607411
R. Dupuis, F. Mehnke, A. Fischer, Zhiyu Xu, Henri Bouchard, T. Detchprohm, S. Shen, F. Ponce
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引用次数: 0
Demonstration of 606nm-wavelength InGaN-based amber micro-LEDs toward red emission 606nm波长ingan基琥珀色微型发光二极管向红光发射的演示
Gallium Nitride Materials and Devices XVII Pub Date : 2022-03-05 DOI: 10.1117/12.2610278
Zhe Zhuang, D. Iida, Martin Velazquez-Rizo, K. Ohkawa
{"title":"Demonstration of 606nm-wavelength InGaN-based amber micro-LEDs toward red emission","authors":"Zhe Zhuang, D. Iida, Martin Velazquez-Rizo, K. Ohkawa","doi":"10.1117/12.2610278","DOIUrl":"https://doi.org/10.1117/12.2610278","url":null,"abstract":"","PeriodicalId":167554,"journal":{"name":"Gallium Nitride Materials and Devices XVII","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125922226","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Demonstration and temperature-dependent analysis of efficient semipolar violet laser diodes heteroepitaxially grown on high-quality low-cost GaN/sapphire substrates 在高质量低成本氮化镓/蓝宝石衬底上异质外延生长的高效半极性紫色激光二极管的演示和温度依赖分析
Gallium Nitride Materials and Devices XVII Pub Date : 2022-03-05 DOI: 10.1117/12.2610614
Haojun Zhang, Hongjian Li, Panpan Li, S. Nakamura, S. Denbaars
{"title":"Demonstration and temperature-dependent analysis of efficient semipolar violet laser diodes heteroepitaxially grown on high-quality low-cost GaN/sapphire substrates","authors":"Haojun Zhang, Hongjian Li, Panpan Li, S. Nakamura, S. Denbaars","doi":"10.1117/12.2610614","DOIUrl":"https://doi.org/10.1117/12.2610614","url":null,"abstract":"","PeriodicalId":167554,"journal":{"name":"Gallium Nitride Materials and Devices XVII","volume":"126 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124208501","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Development of µLED and µLED displays 微LED和微LED显示屏的发展
Gallium Nitride Materials and Devices XVII Pub Date : 2022-03-05 DOI: 10.1117/12.2605821
Hongxing Jiang, Jingyu Lin
{"title":"Development of µLED and µLED displays","authors":"Hongxing Jiang, Jingyu Lin","doi":"10.1117/12.2605821","DOIUrl":"https://doi.org/10.1117/12.2605821","url":null,"abstract":"","PeriodicalId":167554,"journal":{"name":"Gallium Nitride Materials and Devices XVII","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125185739","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Hetroepitaxy of III-nitrides on polycrystalline and amorphous substrates iii -氮化物在多晶和非晶衬底上的异质外延
Gallium Nitride Materials and Devices XVII Pub Date : 2022-03-05 DOI: 10.1117/12.2608062
M. Rather, Loganathan Ravi, S. He, Chao-Chia Cheng, C. Su, J. Chyi
{"title":"Hetroepitaxy of III-nitrides on polycrystalline and amorphous substrates","authors":"M. Rather, Loganathan Ravi, S. He, Chao-Chia Cheng, C. Su, J. Chyi","doi":"10.1117/12.2608062","DOIUrl":"https://doi.org/10.1117/12.2608062","url":null,"abstract":"","PeriodicalId":167554,"journal":{"name":"Gallium Nitride Materials and Devices XVII","volume":"192 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116173003","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Watt-class, semi-polar oriented, violet, edge-emitting laser diodes 瓦特级，半极取向，紫色，边缘发射激光二极管
Gallium Nitride Materials and Devices XVII Pub Date : 2022-03-05 DOI: 10.1117/12.2612994
T. Melo, D. Van Den Broeck, P. Skahan, S. Oh, Curt Dvonch, Qiyuan Wei, Alexander Sztein, M. McLaurin, J. Raring
{"title":"Watt-class, semi-polar oriented, violet, edge-emitting laser diodes","authors":"T. Melo, D. Van Den Broeck, P. Skahan, S. Oh, Curt Dvonch, Qiyuan Wei, Alexander Sztein, M. McLaurin, J. Raring","doi":"10.1117/12.2612994","DOIUrl":"https://doi.org/10.1117/12.2612994","url":null,"abstract":"","PeriodicalId":167554,"journal":{"name":"Gallium Nitride Materials and Devices XVII","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130425130","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Luminescence spectroscopies on 265-nm AlGaN DUV LEDs and AlN films grown on AlN substrates 265nm AlGaN DUV led和生长在AlN衬底上的AlN薄膜的发光光谱
Gallium Nitride Materials and Devices XVII Pub Date : 2022-03-05 DOI: 10.1117/12.2608423
R. Ishii, M. Funato, Y. Kawakami
{"title":"Luminescence spectroscopies on 265-nm AlGaN DUV LEDs and AlN films grown on AlN substrates","authors":"R. Ishii, M. Funato, Y. Kawakami","doi":"10.1117/12.2608423","DOIUrl":"https://doi.org/10.1117/12.2608423","url":null,"abstract":"","PeriodicalId":167554,"journal":{"name":"Gallium Nitride Materials and Devices XVII","volume":"1871 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128668418","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
How does a bulk GaN crystal grow? 块体GaN晶体是如何生长的?
Gallium Nitride Materials and Devices XVII Pub Date : 2022-03-05 DOI: 10.1117/12.2607701
T. Sochacki
{"title":"How does a bulk GaN crystal grow?","authors":"T. Sochacki","doi":"10.1117/12.2607701","DOIUrl":"https://doi.org/10.1117/12.2607701","url":null,"abstract":"","PeriodicalId":167554,"journal":{"name":"Gallium Nitride Materials and Devices XVII","volume":"23 5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125996687","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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