R. Dupuis, F. Mehnke, A. Fischer, Zhiyu Xu, Henri Bouchard, T. Detchprohm, S. Shen, F. Ponce
{"title":"High Al mole fraction crack-free AlGaN on GaN for UV laser diodes by a non-planar growth approach","authors":"R. Dupuis, F. Mehnke, A. Fischer, Zhiyu Xu, Henri Bouchard, T. Detchprohm, S. Shen, F. Ponce","doi":"10.1117/12.2607411","DOIUrl":null,"url":null,"abstract":"","PeriodicalId":167554,"journal":{"name":"Gallium Nitride Materials and Devices XVII","volume":"142 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Gallium Nitride Materials and Devices XVII","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.2607411","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}