面向iii -氮化物光电子学中高效p掺杂:be掺杂GaN的MOCVD生长

{"title":"面向iii -氮化物光电子学中高效p掺杂:be掺杂GaN的MOCVD生长","authors":"B. McEwen, M. Reshchikov, E. Rocco, V. Meyers, K. Hogan, O. Andrieiev, M. Vorobiov, D. Demchenko, Shadi Shahedipour-Sandvik","doi":"10.1117/12.2626491","DOIUrl":null,"url":null,"abstract":"","PeriodicalId":167554,"journal":{"name":"Gallium Nitride Materials and Devices XVII","volume":"23 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Toward highly efficient p-doping in III-nitride optoelectronics: MOCVD growth of Be-doped GaN\",\"authors\":\"B. McEwen, M. Reshchikov, E. Rocco, V. Meyers, K. Hogan, O. Andrieiev, M. Vorobiov, D. Demchenko, Shadi Shahedipour-Sandvik\",\"doi\":\"10.1117/12.2626491\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"\",\"PeriodicalId\":167554,\"journal\":{\"name\":\"Gallium Nitride Materials and Devices XVII\",\"volume\":\"23 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-03-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Gallium Nitride Materials and Devices XVII\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1117/12.2626491\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Gallium Nitride Materials and Devices XVII","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.2626491","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}