B. McEwen, M. Reshchikov, E. Rocco, V. Meyers, K. Hogan, O. Andrieiev, M. Vorobiov, D. Demchenko, Shadi Shahedipour-Sandvik
{"title":"Toward highly efficient p-doping in III-nitride optoelectronics: MOCVD growth of Be-doped GaN","authors":"B. McEwen, M. Reshchikov, E. Rocco, V. Meyers, K. Hogan, O. Andrieiev, M. Vorobiov, D. Demchenko, Shadi Shahedipour-Sandvik","doi":"10.1117/12.2626491","DOIUrl":null,"url":null,"abstract":"","PeriodicalId":167554,"journal":{"name":"Gallium Nitride Materials and Devices XVII","volume":"23 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Gallium Nitride Materials and Devices XVII","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.2626491","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}