2012 IEEE International Integrated Reliability Workshop Final Report最新文献

PMOS NBTI analysis of a 45nm CMOS-SOI process with nitrided gate dielectric 氮化栅电介质45nm CMOS-SOI工艺的PMOS NBTI分析

2012 IEEE International Integrated Reliability Workshop Final Report Pub Date : 2012-10-01 DOI: 10.1109/IIRW.2012.6468955

K. Geoghegan, J. Siddiqui, Todd R. Weatherford

{"title":"PMOS NBTI analysis of a 45nm CMOS-SOI process with nitrided gate dielectric","authors":"K. Geoghegan, J. Siddiqui, Todd R. Weatherford","doi":"10.1109/IIRW.2012.6468955","DOIUrl":"https://doi.org/10.1109/IIRW.2012.6468955","url":null,"abstract":"As a consequence of the semiconductor industry chasing Moore's Law, device scaling and changes to the transistor's material system has introduced significant emerging reliability concerns which have the potential for drastically shortening device and hence product lifetimes. Given that semiconductor technologies leveraged for analog and mixed-signal designs in military and aerospace systems tend to lag behind industry, the extent and potential ramifications of the impending reliability problem has yet to be fully appreciated by the respective communities. Radiation effects and extended operating conditions, commonplace in military and aerospace systems, exacerbate the situation. In this paper, the initial results and analysis of the reliability concern of Negative Bias Temperature Instability (NBTI) in p-channel Metal Oxide Semiconductors (PMOS) devices fabricated in a 45nm CMOS-SOI process will be presented. In addition, the prospect of ionizing space-radiation on PMOS NBTI device reliability will be introduced progressing to the topic of further proposed research, PMOS NBTI in an ionizing radiation environment.","PeriodicalId":165120,"journal":{"name":"2012 IEEE International Integrated Reliability Workshop Final Report","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121829351","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Effect of crystallinity on endurance and switching behavior of HfOx-based resistive memory devices 结晶度对hfox基阻性记忆器件耐久性和开关性能的影响

2012 IEEE International Integrated Reliability Workshop Final Report Pub Date : 2012-10-01 DOI: 10.1109/IIRW.2012.6468907

J. Capulong, B. Briggs, S. Bishop, M. Hovish, R. Matyi, N. Cady

{"title":"Effect of crystallinity on endurance and switching behavior of HfOx-based resistive memory devices","authors":"J. Capulong, B. Briggs, S. Bishop, M. Hovish, R. Matyi, N. Cady","doi":"10.1109/IIRW.2012.6468907","DOIUrl":"https://doi.org/10.1109/IIRW.2012.6468907","url":null,"abstract":"This paper compares the resistive switching properties of crystalline and amorphous HfOx thin-film resistive memory devices (RMDs), which were fabricated by physical vapor deposition films using two different O2 partial pressures. The crystallinity of the two HfOx samples was verified by X-ray diffraction (XRD) and transmission electron microscopy (TEM). Ni/HfOx/Cu devices fabricated from both 50 nm thick amorphous and crystalline HfOx films exhibited consistent bipolar switching. Average electroforming voltage for the crystalline and amorphous weare <;20 V and <;11 V, respectively. Both devices showed similar average set (Vset) and reset (Vreset) voltages of -2.25 V and 0.35 V, respectively, independent of electrode size and current compliance. Preliminary endurance data shows that the amorphous device shows the better endurance (14,300 cycles) compared to that of the crystalline device (102,000 cycles), which is at about an order of magnitude higher than the endurance of the crystalline device. Switching uniformity for both devices showeds similar trends with dispersions (standard deviation/mean ratio) of about 30% for Vset and Vreset.","PeriodicalId":165120,"journal":{"name":"2012 IEEE International Integrated Reliability Workshop Final Report","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116678064","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 12

Optimized data assessment for hot carrier and Fowler-Nordheim stresses on thick MOS gate oxides with plasma process induced charging damage 热载流子和Fowler-Nordheim应力对等离子体过程诱导充电损伤的厚MOS栅极氧化物的优化数据评估

2012 IEEE International Integrated Reliability Workshop Final Report Pub Date : 2012-10-01 DOI: 10.1109/IIRW.2012.6468927

A. Martin, A. Koten, M. Schwerd

引用次数: 4

High-k MOSFET performance degradation by plasma process-induced charging damage — Impacts on device parameter variation 等离子体过程引起的充电损伤对高k MOSFET性能的影响

2012 IEEE International Integrated Reliability Workshop Final Report Pub Date : 2012-10-01 DOI: 10.1109/IIRW.2012.6468925

K. Eriguchi, M. Kamei, Y. Takao, K. Ono

引用次数: 5

Reliability of low current filamentary HfO2 RRAM discussed in the framework of the hourglass SET/RESET model 在沙漏式SET/RESET模型框架下讨论了低电流线状HfO2 RRAM的可靠性

2012 IEEE International Integrated Reliability Workshop Final Report Pub Date : 2012-10-01 DOI: 10.1109/IIRW.2012.6468904

R. Degraeve, A. Fantini, Y. Chen, S. Clima, B. Govoreanu, L. Goux, D. Wouters, P. Roussel, G. Kar, G. Pourtois, S. Cosemans, G. Groeseneken, M. Jurczak, L. Altimime

引用次数: 9

OFF-state induced threshold voltage relaxation after PBTI stress 关闭状态诱导的PBTI应力后阈值电压松弛

2012 IEEE International Integrated Reliability Workshop Final Report Pub Date : 2012-10-01 DOI: 10.1109/IIRW.2012.6468928

S. Kupke, S. Knebel, G. Roll, S. Slesazeck, T. Mikolajick, G. Krause, G. Kurz

引用次数: 11

Comparison between gate oxide lifetime models with Rseries and trapping effect correction in the FN-regime Rseries栅极氧化寿命模型与fn区捕获效应校正的比较

2012 IEEE International Integrated Reliability Workshop Final Report Pub Date : 2012-10-01 DOI: 10.1109/IIRW.2012.6468929

A. Aal

{"title":"Comparison between gate oxide lifetime models with Rseries and trapping effect correction in the FN-regime","authors":"A. Aal","doi":"10.1109/IIRW.2012.6468929","DOIUrl":"https://doi.org/10.1109/IIRW.2012.6468929","url":null,"abstract":"This work analyzes the effect of stress parameter (i.e. E-field) correction on accurate reliability projections of SiO2 based gate dielectrics. Considered are oxide thicknesses in the non-ballistic FN dominated range, only. Irrespective of which underlying dielectric degradation mechanism is actually responsible for failure, here, an empirical approach is chosen that focuses on the stress, test and reliability assessment metric. Empirical or physically justified lifetime models depend on the outcome of well-designed stress tests. However, when adjustable stress parameters such as electrical field or indirect parameters such as dissipated energy at the anode side are affected by the degradation process itself, the goodness-of-fit to measured data is under question. Charge trapping is such an effect - it interferes with applied bias. As a result, the effective stress field to the material or the delivered energy to the anode is altered while it is constant or clearly defined assumed. Changing the viewpoint from a macroscopic to a microscopic view of inner material effects can help to consider a more suitable metric for material assessment. Following this principle, common gate oxide lifetime models are being reviewed and compared by adjusting the applied bias to the effectively acting stress bias within the material stack. As a result, competing lifetime models change their goodness-of-fit rank order. The inferred process indirectly qualifies as a selection tool to pick a more suitable lifetime model for a processed gate material. In addition the results point to possible mistakes in time dependent dielectric breakdown (TDDB) data acquisition that can influence the view on today's three most competing lifetime models.","PeriodicalId":165120,"journal":{"name":"2012 IEEE International Integrated Reliability Workshop Final Report","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121490457","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Effects of Ag content on electromigration of Sn-Ag solder bumps in C4 package Ag含量对C4封装Sn-Ag钎料凸点电迁移的影响

2012 IEEE International Integrated Reliability Workshop Final Report Pub Date : 2012-10-01 DOI: 10.1109/IIRW.2012.6468938

S. Ha, Hyunsuk Chun, Hyuniun Choi, Bo-In Noh, J. Park

引用次数: 1

DRAM operating states and burn in DRAM的工作状态和刻录

2012 IEEE International Integrated Reliability Workshop Final Report Pub Date : 2012-10-01 DOI: 10.1109/IIRW.2012.6468941

W. Ellis, G. Yip, J. Hong

引用次数: 1

Impact of copper and aluminum power metallization on the negative bias temperature instability 铜和铝粉末金属化对负偏压温度不稳定性的影响

2012 IEEE International Integrated Reliability Workshop Final Report Pub Date : 2012-10-01 DOI: 10.1109/IIRW.2012.6468922

R. Stradiotto, G. Pobegen, M. Nelhiebel

引用次数: 0