DRAM operating states and burn in

W. Ellis, G. Yip, J. Hong
{"title":"DRAM operating states and burn in","authors":"W. Ellis, G. Yip, J. Hong","doi":"10.1109/IIRW.2012.6468941","DOIUrl":null,"url":null,"abstract":"Observation of system level DRAM operations can provide insights for developing improved reliability screens such as burn-in. We instrumented a dual rank 4GB RDIMM to probe command bus traffic from the memory controller to the DRAMs on a server mother board. Internal DRAM operating states are derived by analyzing the command bus traffic. Analysis showed that when the controller uses an open page policy with bank interleaving, the active idle state can become the dominant bias configuration in activated arrays. This result can be applied to the development of an efficient burn in stress.","PeriodicalId":165120,"journal":{"name":"2012 IEEE International Integrated Reliability Workshop Final Report","volume":"12 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE International Integrated Reliability Workshop Final Report","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IIRW.2012.6468941","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

Observation of system level DRAM operations can provide insights for developing improved reliability screens such as burn-in. We instrumented a dual rank 4GB RDIMM to probe command bus traffic from the memory controller to the DRAMs on a server mother board. Internal DRAM operating states are derived by analyzing the command bus traffic. Analysis showed that when the controller uses an open page policy with bank interleaving, the active idle state can become the dominant bias configuration in activated arrays. This result can be applied to the development of an efficient burn in stress.
DRAM的工作状态和刻录
对系统级DRAM操作的观察可以为开发改进的可靠性屏幕(如老化)提供见解。我们使用双4GB RDIMM来探测从内存控制器到服务器主板上的dram的命令总线流量。通过对指令总线流量的分析,导出了DRAM内部的运行状态。分析表明,当控制器采用带银行交错的开页策略时,激活阵列中的主动空闲状态可以成为主导偏置配置。这一结果可应用于有效燃烧应力的发展。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信