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2012 IEEE International Integrated Reliability Workshop Final Report最新文献

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Recent results concerning the influence of hydrogen on the bias temperature instability 氢对偏置温度不稳定性影响的最新研究结果
2012 IEEE International Integrated Reliability Workshop Final Report Pub Date : 2012-10-01 DOI: 10.1109/IIRW.2012.6468920
G. Pobegen, M. Nelhiebel, T. Grasser
{"title":"Recent results concerning the influence of hydrogen on the bias temperature instability","authors":"G. Pobegen, M. Nelhiebel, T. Grasser","doi":"10.1109/IIRW.2012.6468920","DOIUrl":"https://doi.org/10.1109/IIRW.2012.6468920","url":null,"abstract":"Alongside the intensive debate concerning the influence of hydrogen on NBTI we present several details which have received little or no attention in the past. We show experimental evidence that hydrogen does not only passivate interface traps but also positive oxide charges or border traps. Besides passivation, hydrogen increases the overall drift capability of a device under NBTS, thereby increasing the sum of both precursors and activated defects. Furthermore hydrogen passivation has a positive effect on PBTI, presumably through the passivation of pre-existing oxide traps.","PeriodicalId":165120,"journal":{"name":"2012 IEEE International Integrated Reliability Workshop Final Report","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121355678","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Experimentally demonstrated filament-based switching mechanism for Al/CuxO/Cu memristive devices 实验证明了Al/CuxO/Cu记忆器件的基于丝的开关机制
2012 IEEE International Integrated Reliability Workshop Final Report Pub Date : 2012-10-01 DOI: 10.1109/IIRW.2012.6468954
N. McDonald, S. Bishop, N. Cady
{"title":"Experimentally demonstrated filament-based switching mechanism for Al/CuxO/Cu memristive devices","authors":"N. McDonald, S. Bishop, N. Cady","doi":"10.1109/IIRW.2012.6468954","DOIUrl":"https://doi.org/10.1109/IIRW.2012.6468954","url":null,"abstract":"Al/CuxO/Cu memristive devices created via a plasma oxidation step have previously demonstrated complete nonpolar switching behavior [1]. An additional material contamination control measure resulted in improved uniformity of I-V curve behavior but necessitated an initial forming step in most devices. The operation voltages were irrespective of switching style and top electrode (TE) size. The high resistance state resistance increased with decreasing TE size; the low resistance state resistance remained invariant. Lateral switching of memristive device pairs unambiguously indicated filament-based device switching. A voltage-driven CuxO filament composition modulation switching mechanism is suggested instead of the popular Joule heating RESET mechanism.","PeriodicalId":165120,"journal":{"name":"2012 IEEE International Integrated Reliability Workshop Final Report","volume":"76 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116865243","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Resistive switching random access memory — Materials, device, interconnects, and scaling considerations 电阻开关随机存取存储器。材料，器件，互连和缩放考虑
2012 IEEE International Integrated Reliability Workshop Final Report Pub Date : 2012-10-01 DOI: 10.1109/IIRW.2012.6468906
Yi Wu, Jiale Liang, Shimeng Yu, X. Guan, H. Wong
{"title":"Resistive switching random access memory — Materials, device, interconnects, and scaling considerations","authors":"Yi Wu, Jiale Liang, Shimeng Yu, X. Guan, H. Wong","doi":"10.1109/IIRW.2012.6468906","DOIUrl":"https://doi.org/10.1109/IIRW.2012.6468906","url":null,"abstract":"In this paper, we review recent progresses on metal oxide resistive switching memory (RRAM). RRAM device design is explored from different aspects including oxide/electrode materials, uniformity issues, and scaling down to single-digit-nm regime. We studied the stochastic nature of resistive switching in metal oxide RRAM and revealed the physics behind switching parameter variations in HfOx-based RRAM using a 2D analytical solver. In a forward-looking analysis into the sub-10 nm regime, we investigated the impact of wordline/bitline metal wire scaling on the read/write performance, energy consumption in the cross-point memory array architecture.","PeriodicalId":165120,"journal":{"name":"2012 IEEE International Integrated Reliability Workshop Final Report","volume":"67 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132380356","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Impact and measurement of short term threshold instabilities in MOSFETs of analog circuits 模拟电路中mosfet短期阈值不稳定性的影响与测量
2012 IEEE International Integrated Reliability Workshop Final Report Pub Date : 2012-10-01 DOI: 10.1109/IIRW.2012.6468913
K. Rott, D. Schmitt-Landsiedel, H. Reisinger, G. Rott, G. Georgakos, C. Schluender, S. Aresu, W. Gustin, T. Grasser
{"title":"Impact and measurement of short term threshold instabilities in MOSFETs of analog circuits","authors":"K. Rott, D. Schmitt-Landsiedel, H. Reisinger, G. Rott, G. Georgakos, C. Schluender, S. Aresu, W. Gustin, T. Grasser","doi":"10.1109/IIRW.2012.6468913","DOIUrl":"https://doi.org/10.1109/IIRW.2012.6468913","url":null,"abstract":"Short term threshold instabilities may cause erratic behavior in analog circuits like comparators and analog-to-digital-converters. As conventional characterization procedures have not been appropriately sensitized to such issues, this kind of erratic behavior usually only occurs in products where it is very difficult to identify. Therefore, for example prior to the introduction of a new gate stack, it is essential to do a careful experimental characterization of short term threshold instabilities, which goes beyond standard NBTI or PBTI measurements. A reliable forecast of the effect of threshold instabilities on the performance of analog circuits will require circuit simulations taking the threshold instabilities into account.","PeriodicalId":165120,"journal":{"name":"2012 IEEE International Integrated Reliability Workshop Final Report","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134564981","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
On the correlation between NBTI, SILC, and flicker noise NBTI、SILC与闪烁噪声的相关性研究
2012 IEEE International Integrated Reliability Workshop Final Report Pub Date : 2012-10-01 DOI: 10.1109/IIRW.2012.6468921
P. Wagner, B. Kaczer, A. Scholten, H. Reisinger, S. Bychikhin, D. Pogany, L. Vandamme, T. Grasser
{"title":"On the correlation between NBTI, SILC, and flicker noise","authors":"P. Wagner, B. Kaczer, A. Scholten, H. Reisinger, S. Bychikhin, D. Pogany, L. Vandamme, T. Grasser","doi":"10.1109/IIRW.2012.6468921","DOIUrl":"https://doi.org/10.1109/IIRW.2012.6468921","url":null,"abstract":"Negative Bias Temperature Instability (NBTI) is suspected to be linked to various other MOSFET phenomena. We report measurements of increased drain current noise, increased gate leakage current, and decreased recoverable threshold voltage shift after multiple cycles of negative bias temperature stress and relaxation for three different technologies. We also find that stress conditions have to be carefully selected, otherwise oxide breakdown will be erroneously interpreted as a correlation between NBTI, noise and gate leakage. Finally, the implications of our findings on the modelling of oxide defects are highlighted.","PeriodicalId":165120,"journal":{"name":"2012 IEEE International Integrated Reliability Workshop Final Report","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116454110","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Measurement and modeling of duty-cycle effects due to NBTI 由NBTI引起的占空比效应的测量和建模
2012 IEEE International Integrated Reliability Workshop Final Report Pub Date : 2012-10-01 DOI: 10.1109/IIRW.2012.6468939
K. Kambour, D. Nguyen, C. Kouhestani, R. Devine
{"title":"Measurement and modeling of duty-cycle effects due to NBTI","authors":"K. Kambour, D. Nguyen, C. Kouhestani, R. Devine","doi":"10.1109/IIRW.2012.6468939","DOIUrl":"https://doi.org/10.1109/IIRW.2012.6468939","url":null,"abstract":"One of the most important requirements for modeling of the long-term effects of negative bias temperature instability (NBTI) on device/circuit response is an understanding of how to include the effect of duty cycle on the threshold voltage shift. Since NBTI is known to be comprised of both permanent and recoverable components, a measurement protocol must be established enabling separation of these components and then their recombination to predict the shift for different duty cycles. In the work reported here, we have endeavored to address these issues by combining pulsed and pseudo-DC stressing/relaxation methods.","PeriodicalId":165120,"journal":{"name":"2012 IEEE International Integrated Reliability Workshop Final Report","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127913855","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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