Recent results concerning the influence of hydrogen on the bias temperature instability

Abstract

Alongside the intensive debate concerning the influence of hydrogen on NBTI we present several details which have received little or no attention in the past. We show experimental evidence that hydrogen does not only passivate interface traps but also positive oxide charges or border traps. Besides passivation, hydrogen increases the overall drift capability of a device under NBTS, thereby increasing the sum of both precursors and activated defects. Furthermore hydrogen passivation has a positive effect on PBTI, presumably through the passivation of pre-existing oxide traps.