NBTI、SILC与闪烁噪声的相关性研究

P. Wagner, B. Kaczer, A. Scholten, H. Reisinger, S. Bychikhin, D. Pogany, L. Vandamme, T. Grasser
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引用次数: 3

摘要

负偏置温度不稳定性(NBTI)被怀疑与其他各种MOSFET现象有关。我们报告了三种不同技术在负偏置温度应力和弛豫多次循环后漏极电流噪声增加、栅极泄漏电流增加和可恢复阈值电压位移减少的测量结果。我们还发现,应力条件必须仔细选择,否则氧化物击穿将被错误地解释为NBTI,噪声和栅极泄漏之间的相关性。最后,强调了我们的研究结果对氧化缺陷建模的影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
On the correlation between NBTI, SILC, and flicker noise
Negative Bias Temperature Instability (NBTI) is suspected to be linked to various other MOSFET phenomena. We report measurements of increased drain current noise, increased gate leakage current, and decreased recoverable threshold voltage shift after multiple cycles of negative bias temperature stress and relaxation for three different technologies. We also find that stress conditions have to be carefully selected, otherwise oxide breakdown will be erroneously interpreted as a correlation between NBTI, noise and gate leakage. Finally, the implications of our findings on the modelling of oxide defects are highlighted.
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