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Magnetic Characterization of Cobalt Selenide and Nickel Selenide Thin Films 硒化钴和硒化镍薄膜的磁性表征
2018 IEEE 13th Nanotechnology Materials and Devices Conference (NMDC) Pub Date : 2018-10-01 DOI: 10.1109/NMDC.2018.8605836
Michael Hopkins, N. Kuperman, J. Barnes, R. Solanki
{"title":"Magnetic Characterization of Cobalt Selenide and Nickel Selenide Thin Films","authors":"Michael Hopkins, N. Kuperman, J. Barnes, R. Solanki","doi":"10.1109/NMDC.2018.8605836","DOIUrl":"https://doi.org/10.1109/NMDC.2018.8605836","url":null,"abstract":"Transition metal dichalcogenides (TMDCs) are a family of materials whose crystalline structure consists of a layer of transition metal atoms sandwiched between 2 layers of chalcogenide atoms. Some of these materials can be grown in 2D hexagonal phase and show tunability of their electrical and magnetic properties based on layer thickness. One aspect of these materials that has received little attention is their magnetic properties. Hence, we have investigated magnetic properties of CoSe and NiSe (both 2D semiconductors), and their heterostructure. The reason for choosing these intrinsically ferromagnetic transition metal atoms based TMCs was to examine how reduction from the bulk to 2D films would influence the magnetic activity of these samples. In order to produce large area films, we have employed atomic layer deposition (ALD) for growth of uniform, few layer-thick films. First the composition and crystal structure of these films are characterized, and then their magnetic properties analyzed. We have found that thin films of both these materials show mostly paramagnetic behavior.","PeriodicalId":164481,"journal":{"name":"2018 IEEE 13th Nanotechnology Materials and Devices Conference (NMDC)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133088157","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Suspended Graphene Membranes for Strain Sensor Applications 用于应变传感器的悬浮石墨烯膜
2018 IEEE 13th Nanotechnology Materials and Devices Conference (NMDC) Pub Date : 2018-10-01 DOI: 10.1109/NMDC.2018.8605930
Lina Tizani, I. Saadat
{"title":"Suspended Graphene Membranes for Strain Sensor Applications","authors":"Lina Tizani, I. Saadat","doi":"10.1109/NMDC.2018.8605930","DOIUrl":"https://doi.org/10.1109/NMDC.2018.8605930","url":null,"abstract":"CVD monolayer graphene cavities based devices were fabricated and characterized along with non-cavity devices as a differential pair of sensors for strain detection. The cavities were etched into SiO2 over Si substrate and then graphene films were transferred forming the graphene membrane over the cavities. Raman spectroscopy of graphene on top of cavities showed significant redshift in the 2D band vs. non cavity device $(0.14 mathbf{c}bar{mathbf{m}}^{1}$ per $1mumathbf{m}$ of cavity diameter), which is due to the elongation of the carbon-carbon bonds. This indicates the feasibility of using graphene membrane as a strain sensor. The gauge factor defined as the relation between the change in electrical resistance and the induced strain was computed to be equal to 4.11. This sensor was tested in gas environment. The cavity shows a higher sensitivity than the non-cavity as a function of the gas introduced. These results indicates that the induced strain within the cavity in graphene is key enabler for the added sensitivity for graphene based sensor system.","PeriodicalId":164481,"journal":{"name":"2018 IEEE 13th Nanotechnology Materials and Devices Conference (NMDC)","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133333605","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Characterization of the Electrical Behaviour of Thin Dielectric Films at Nanoscale using Methods Derived from Atomic Force Microscopy: Application to Plasma Deposited Agnps-Based Nanocomposites 利用原子力显微镜的方法在纳米尺度上表征电介质薄膜的电学行为:在等离子沉积agnps基纳米复合材料中的应用
2018 IEEE 13th Nanotechnology Materials and Devices Conference (NMDC) Pub Date : 2018-10-01 DOI: 10.1109/NMDC.2018.8605887
C. Villeneuve-Faure, K. Makasheva, C. Diaou, L. Boudou, Gilbert Teyssedre
{"title":"Characterization of the Electrical Behaviour of Thin Dielectric Films at Nanoscale using Methods Derived from Atomic Force Microscopy: Application to Plasma Deposited Agnps-Based Nanocomposites","authors":"C. Villeneuve-Faure, K. Makasheva, C. Diaou, L. Boudou, Gilbert Teyssedre","doi":"10.1109/NMDC.2018.8605887","DOIUrl":"https://doi.org/10.1109/NMDC.2018.8605887","url":null,"abstract":"Recent advances in the development of micro-and nano-devices call for applications of thin nanocomposite dielectric films (thickness less than few tens of nanometers) with tuneable electrical properties. For optimization purposes, their behaviour under electrical stress needs to be probed at relevant scale, i.e. nanoscale. To that end electrical modes derived from Atomic Force Microscopy (AFM) appear the best methods due to their nanoscale resolution and non-destructive nature which permits in-situ characterization. The potentialities of electrical modes derived from AFM are presented in this work. The samples under study consist of plasma processed thin dielectric silica layers with embedded silver nanoparticles (AgNPs). Charge injection at local scale, performed by using AFM tip, is investigated by Kelvin Probe Force Microscopy (KPFM). Modulation of the local permittivity induced by the presence of AgNPs is assessed by Electrostatic Force Microscopy (EFM).","PeriodicalId":164481,"journal":{"name":"2018 IEEE 13th Nanotechnology Materials and Devices Conference (NMDC)","volume":"238 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115756324","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Effect of Dy3+ substitution on structural, magnetic and dielectric properties of BiFeO3-PbTiO3multiferroics Dy3+取代对bifeo3 - pbtio3多铁材料结构、磁性和介电性能的影响
2018 IEEE 13th Nanotechnology Materials and Devices Conference (NMDC) Pub Date : 2018-10-01 DOI: 10.1109/NMDC.2018.8605908
Naveen Kumar, Sanjeev Kumar, Bastola Narayan, S. Bansal, A. Singh
{"title":"Effect of Dy3+ substitution on structural, magnetic and dielectric properties of BiFeO3-PbTiO3multiferroics","authors":"Naveen Kumar, Sanjeev Kumar, Bastola Narayan, S. Bansal, A. Singh","doi":"10.1109/NMDC.2018.8605908","DOIUrl":"https://doi.org/10.1109/NMDC.2018.8605908","url":null,"abstract":"Multiferroic <tex>$0.6text{Bi}_{(1-mathrm{x})}text{Dy}_{mathrm{x}}text{FeO}_{3}-0.4text{PbTiO}_{3} (mathrm{x}=0$</tex>, 0.10) nanoparticles were synthesized via sol-gel route. The effect of rare earth <tex>$text{Dy}^{3+}$</tex> ion substitution on structural, magnetic and dielectric properties of <tex>$text{BiFeO}_{3}-text{PbTiO}_{3}$</tex> system has been studied. Rietveld refinement studies of X-ray diffraction profiles reveal that system exhibit cubic <tex>$(text{Pm}bar{3}mathrm{m})$</tex> and tetragonal (P4mm) crystal structure for x = 0 and single cubic (Pm3m) phase for x = 0.10. Experimental results show that <tex>$text{Dy}^{3+}$</tex> doping suppresses the modulated spin cycloid of BiFeO<inf>3</inf> results in net remnant magnetization. Dielectric studies show that the conductivity of the sample decreases with <tex>$text{Dy}^{3+}$</tex> ion substitution in the composition, which indicates that <tex>$text{Dy}^{3+}$</tex> doping suppresses the oxygen vacancies.","PeriodicalId":164481,"journal":{"name":"2018 IEEE 13th Nanotechnology Materials and Devices Conference (NMDC)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122033596","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Using Ions to Control Transport in Two-Dimensional Materials for Ion-Controlled Electronics 利用离子控制离子控制电子器件二维材料中的输运
2018 IEEE 13th Nanotechnology Materials and Devices Conference (NMDC) Pub Date : 2018-10-01 DOI: 10.1109/NMDC.2018.8605868
Ke Xu, Eli Bostian, Aaron B. Woeppel, H. Ding, Mahbubul Islam, D. Guzman, A. Seabaugh, A. Strachan, E. Beckman, S. Fullerton‐Shirey
{"title":"Using Ions to Control Transport in Two-Dimensional Materials for Ion-Controlled Electronics","authors":"Ke Xu, Eli Bostian, Aaron B. Woeppel, H. Ding, Mahbubul Islam, D. Guzman, A. Seabaugh, A. Strachan, E. Beckman, S. Fullerton‐Shirey","doi":"10.1109/NMDC.2018.8605868","DOIUrl":"https://doi.org/10.1109/NMDC.2018.8605868","url":null,"abstract":"","PeriodicalId":164481,"journal":{"name":"2018 IEEE 13th Nanotechnology Materials and Devices Conference (NMDC)","volume":"86 2","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120922395","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Growth of Horizontally Suspended Multi-Walled Carbon Nanotubes for In-Situ Fabrication of Solar Devices 水平悬浮多壁碳纳米管生长用于原位制造太阳能器件
2018 IEEE 13th Nanotechnology Materials and Devices Conference (NMDC) Pub Date : 2018-10-01 DOI: 10.1109/NMDC.2018.8605910
J. Iyer, Laurence H. Cooke, P. Comita, D. Cooke
{"title":"Growth of Horizontally Suspended Multi-Walled Carbon Nanotubes for In-Situ Fabrication of Solar Devices","authors":"J. Iyer, Laurence H. Cooke, P. Comita, D. Cooke","doi":"10.1109/NMDC.2018.8605910","DOIUrl":"https://doi.org/10.1109/NMDC.2018.8605910","url":null,"abstract":"NovaSolix is developing antenna technology based solar devices used to capture solar energy with twice the efficiency at 20% of the cost and 20% of the weight per watt compared to current photovoltaic technology based products. In the NovaSolix solution, multi-wall carbon nanotubes (CNT) are grown into arrays of tiny antennas that are suspended between Aluminum ground/contact lines. In this paper, optimization of low temperature growth parameters for synthesizing multi-walled carbon nanotubes that bridge 0.5- $1.4mu mathbf{m}$ wide trenches is described. The effect of temperature, $mathbf{NH}_{3}/mathbf{C}_{2}mathbf{H}_{2}$ gas ratio and Ni catalyst layer in controlling the number of CNTs that bridge the trench is discussed. Characterization of the fabricated devices by Scanning electron microscope analysis and electrical resistance measurements is presented.","PeriodicalId":164481,"journal":{"name":"2018 IEEE 13th Nanotechnology Materials and Devices Conference (NMDC)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121332451","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Lorentz Based MetamateriaIs for Nonlinear Generation 基于洛伦兹的非线性生成超材料
2018 IEEE 13th Nanotechnology Materials and Devices Conference (NMDC) Pub Date : 2018-10-01 DOI: 10.1109/NMDC.2018.8605834
E. Rahimi, R. Gordon, Haitian Xu, B. Choi
{"title":"Lorentz Based MetamateriaIs for Nonlinear Generation","authors":"E. Rahimi, R. Gordon, Haitian Xu, B. Choi","doi":"10.1109/NMDC.2018.8605834","DOIUrl":"https://doi.org/10.1109/NMDC.2018.8605834","url":null,"abstract":"Nonlinear plasmonic metasurfaces, as a subset of metamaterials, allow for active functionalities not found in natural optical materials; including switching, wavelength conversion, routing, adaptive focusing. Metasurfaces in particular are compact, cascadable and easy to fabricate with established planar technologies, and therefore deserve particular attention. Here we focus on nonlinear plasmonic metasurfaces, where the nonlinear response of the metal is considered in nanostructured plasmonic metasurfaces. Past works have demonstrated that the Lorentz contribution to nonlinear plasmonic metasurfaces is typically negligible. In this work, we discuss the physical reasons why this is true and show experimental results of designs where the Lorentz contribution is maximized, with some surprising results. Finally, the prospects of these demonstrations for future metasurface applications, including high efficiency wavelength conversion, are discussed.","PeriodicalId":164481,"journal":{"name":"2018 IEEE 13th Nanotechnology Materials and Devices Conference (NMDC)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121009465","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Quasi-Analytic Behavioral Model for the Single-electron Transistor for Hybrid MOS/SET Circuit Simulation 用于MOS/SET混合电路仿真的单电子晶体管准解析行为模型
2018 IEEE 13th Nanotechnology Materials and Devices Conference (NMDC) Pub Date : 2018-10-01 DOI: 10.1109/NMDC.2018.8605730
Francisco Castro, I. Savidis, Arturo Sarmiento
{"title":"A Quasi-Analytic Behavioral Model for the Single-electron Transistor for Hybrid MOS/SET Circuit Simulation","authors":"Francisco Castro, I. Savidis, Arturo Sarmiento","doi":"10.1109/NMDC.2018.8605730","DOIUrl":"https://doi.org/10.1109/NMDC.2018.8605730","url":null,"abstract":"A methodology to incorporate single-electron transistors (SET) into the IC design flow is introduced in this paper. A SET model is developed that is defined as a VERILOG-A module that can be used for SPICE-like simulation of hybrid circuits containing SET and MOS transistors. The SET model is formulated in a semi-symbolic form, which provides insight and intuition on the functionality of the device. The model was verified on a SET-only and hybrid (SET and MOS transistors) implementation of an inverter. The proposed model is compared with a verified analytical model that applies a master equation, which results in errors of approximately 1.6% for a SET-only inverter and 1.3% for a hybrid inverter.","PeriodicalId":164481,"journal":{"name":"2018 IEEE 13th Nanotechnology Materials and Devices Conference (NMDC)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128907815","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Highly Sensitive Ion Detection With Graphene/Si Schottky Junction Sensors 石墨烯/硅肖特基结传感器的高灵敏度离子检测
2018 IEEE 13th Nanotechnology Materials and Devices Conference (NMDC) Pub Date : 2018-10-01 DOI: 10.1109/NMDC.2018.8605920
Hongmei Li, John B. Hardaway, G. Koley
{"title":"Highly Sensitive Ion Detection With Graphene/Si Schottky Junction Sensors","authors":"Hongmei Li, John B. Hardaway, G. Koley","doi":"10.1109/NMDC.2018.8605920","DOIUrl":"https://doi.org/10.1109/NMDC.2018.8605920","url":null,"abstract":"A graphene/silicon Schottky junction-based ion-sensor with ultrahigh sensitivity for metal ions in a liquid environment is reported. High-quality single layer graphene grown in CVD system was used for device fabrication, and the sensor chip was packaged and encapsulated on a PCB with epoxy resin to meet its aquatic operating environment. Graphene's atomically thin nature and tunable fermi level enabled the device to easily detect ion concentration variations from variation in the Schottky barrier height at the graphene/silicon heterojunction interface. The junction current was observed to change exponentially with the Schottky barrier height, which offers huge advantage over commonly used field effect transistor for sensing applications.","PeriodicalId":164481,"journal":{"name":"2018 IEEE 13th Nanotechnology Materials and Devices Conference (NMDC)","volume":"139 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122347348","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effects of Environmental Factors on the Stability of Silver Nanowire Transparent Electrodes 环境因素对银纳米线透明电极稳定性的影响
2018 IEEE 13th Nanotechnology Materials and Devices Conference (NMDC) Pub Date : 2018-10-01 DOI: 10.1109/NMDC.2018.8605897
Chiao-Chi Lin, D. Lin, Jing- Tang Jhan
{"title":"Effects of Environmental Factors on the Stability of Silver Nanowire Transparent Electrodes","authors":"Chiao-Chi Lin, D. Lin, Jing- Tang Jhan","doi":"10.1109/NMDC.2018.8605897","DOIUrl":"https://doi.org/10.1109/NMDC.2018.8605897","url":null,"abstract":"Silver nanowires (AgNWs) are currently one of the commercialized materials competing with indium-tin oxide for the application in transparent electrodes. Due to nanoscale instability effect, AgNWs degradation caused by environmental stresses is inevitably an obstacle to the wide acceptance of AgNWs. In this study, effects of irradiance of UV, UV photon energy, and heat on the degradation behaviors of pristine AgNWs was investigated under dry conditions of 15 % relative humidity. A minimal influence from substrate and encapsulant materials degradation was designed for discovering unambiguous degradation behavior of AgNWs. The synergistic aging effects between UV and temperature were demonstrated, and the results can be used for further understanding the degradation of encapsulated or module-level AgNWs transparent electrodes.","PeriodicalId":164481,"journal":{"name":"2018 IEEE 13th Nanotechnology Materials and Devices Conference (NMDC)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125644067","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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