{"title":"用于MOS/SET混合电路仿真的单电子晶体管准解析行为模型","authors":"Francisco Castro, I. Savidis, Arturo Sarmiento","doi":"10.1109/NMDC.2018.8605730","DOIUrl":null,"url":null,"abstract":"A methodology to incorporate single-electron transistors (SET) into the IC design flow is introduced in this paper. A SET model is developed that is defined as a VERILOG-A module that can be used for SPICE-like simulation of hybrid circuits containing SET and MOS transistors. The SET model is formulated in a semi-symbolic form, which provides insight and intuition on the functionality of the device. The model was verified on a SET-only and hybrid (SET and MOS transistors) implementation of an inverter. The proposed model is compared with a verified analytical model that applies a master equation, which results in errors of approximately 1.6% for a SET-only inverter and 1.3% for a hybrid inverter.","PeriodicalId":164481,"journal":{"name":"2018 IEEE 13th Nanotechnology Materials and Devices Conference (NMDC)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"A Quasi-Analytic Behavioral Model for the Single-electron Transistor for Hybrid MOS/SET Circuit Simulation\",\"authors\":\"Francisco Castro, I. Savidis, Arturo Sarmiento\",\"doi\":\"10.1109/NMDC.2018.8605730\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A methodology to incorporate single-electron transistors (SET) into the IC design flow is introduced in this paper. A SET model is developed that is defined as a VERILOG-A module that can be used for SPICE-like simulation of hybrid circuits containing SET and MOS transistors. The SET model is formulated in a semi-symbolic form, which provides insight and intuition on the functionality of the device. The model was verified on a SET-only and hybrid (SET and MOS transistors) implementation of an inverter. The proposed model is compared with a verified analytical model that applies a master equation, which results in errors of approximately 1.6% for a SET-only inverter and 1.3% for a hybrid inverter.\",\"PeriodicalId\":164481,\"journal\":{\"name\":\"2018 IEEE 13th Nanotechnology Materials and Devices Conference (NMDC)\",\"volume\":\"34 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE 13th Nanotechnology Materials and Devices Conference (NMDC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NMDC.2018.8605730\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE 13th Nanotechnology Materials and Devices Conference (NMDC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NMDC.2018.8605730","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A Quasi-Analytic Behavioral Model for the Single-electron Transistor for Hybrid MOS/SET Circuit Simulation
A methodology to incorporate single-electron transistors (SET) into the IC design flow is introduced in this paper. A SET model is developed that is defined as a VERILOG-A module that can be used for SPICE-like simulation of hybrid circuits containing SET and MOS transistors. The SET model is formulated in a semi-symbolic form, which provides insight and intuition on the functionality of the device. The model was verified on a SET-only and hybrid (SET and MOS transistors) implementation of an inverter. The proposed model is compared with a verified analytical model that applies a master equation, which results in errors of approximately 1.6% for a SET-only inverter and 1.3% for a hybrid inverter.