2018 IEEE 13th Nanotechnology Materials and Devices Conference (NMDC)最新文献

TDDFT Studies on Sheet Size-Dependency of Optoelectronic Properties of 2D Silicon 二维硅光电特性随片径变化的TDDFT研究

2018 IEEE 13th Nanotechnology Materials and Devices Conference (NMDC) Pub Date : 2018-10-01 DOI: 10.1109/NMDC.2018.8605896

Md Raiyan Alam, Ganesh Alwarappan, A. Bhandari, S. Patil, S. Alfalah, M. Shibl, W. Hassan, Reza Nekovci, A. Verma

引用次数: 2

New Insights into Dielectric Nanocomposites by EFM Imaging and Spectroscopy 电介质纳米复合材料的EFM成像和光谱学新见解

2018 IEEE 13th Nanotechnology Materials and Devices Conference (NMDC) Pub Date : 2018-10-01 DOI: 10.1109/NMDC.2018.8605878

D. E. Khoury, J. Castellon, R. Arinero

引用次数: 0

Assessing Probe Damage in Constant Frequency and Frequency-Modulation Shear-force Acoustic Near-field Microscopy 恒频和调频剪切力声近场显微镜探头损伤评估

2018 IEEE 13th Nanotechnology Materials and Devices Conference (NMDC) Pub Date : 2018-10-01 DOI: 10.1109/NMDC.2018.8605871

T. Brockman, J. Bai, R. Fernandez, A. L. La Rosa

{"title":"Assessing Probe Damage in Constant Frequency and Frequency-Modulation Shear-force Acoustic Near-field Microscopy","authors":"T. Brockman, J. Bai, R. Fernandez, A. L. La Rosa","doi":"10.1109/NMDC.2018.8605871","DOIUrl":"https://doi.org/10.1109/NMDC.2018.8605871","url":null,"abstract":"Shear- force acoustic near-field microscopy (SANM) has recently been introduced as a metrology tool to characterize the viscoelastic properties of fluids trapped between two solid boundaries that are under relative shear motion and separated by a nano-sized gap. Such properties are in many instances quite different from the bulk. SANM uses a) the apex of a laterally oscillating tapered nano-probe as one of the trapping boundaries, while the other boundary is typically a flat substrate, and b) an acoustic sensor (in intimate contact with the flat boundary,) which allows an independent monitoring of the fluid's near-field acoustic emission that results from the shear interaction. Evaluation of the probe's integrity during the shear interactions is necessary for ensuring accurate and reproducible metrology of the SANM system. This paper evaluates the effects of interfacial interaction forces on the eventual deformations of tapered gold probes. By gradually decreasing the probe-substrate distance, the probe is subjected to increasingly larger interaction forces; assessment of the damage is implemented by comparing SEM images of the probe acquired before and after each approach/retraction test. Results using constant driving frequency and frequency modulation are presented; the latter allows discriminating the role played by the damping force components on the eventual probe damage.","PeriodicalId":164481,"journal":{"name":"2018 IEEE 13th Nanotechnology Materials and Devices Conference (NMDC)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115471613","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Ab-initio Calculation of Nonlinear Optical Susceptibilities in Germanium Quantum Dots 锗量子点非线性光学磁化率的从头计算

2018 IEEE 13th Nanotechnology Materials and Devices Conference (NMDC) Pub Date : 2018-10-01 DOI: 10.1109/NMDC.2018.8605886

Shadli Islam, H. Shah, D. Shiri, R. Nekovei, A. Verma

引用次数: 0

Potential High-Speed Switching Nano-Device with Sub-Nanometer Gaps 具有亚纳米间隙的潜在高速开关纳米器件

2018 IEEE 13th Nanotechnology Materials and Devices Conference (NMDC) Pub Date : 2018-10-01 DOI: 10.1109/NMDC.2018.8605927

A. Khademi, M. Billet, Adarsh Lalitha Ravindranath, Amirhossein Alizadeh Khaledi, Mirali Seyed Shariadoust, Nasrin Razmjooei, R. Gordon

{"title":"Potential High-Speed Switching Nano-Device with Sub-Nanometer Gaps","authors":"A. Khademi, M. Billet, Adarsh Lalitha Ravindranath, Amirhossein Alizadeh Khaledi, Mirali Seyed Shariadoust, Nasrin Razmjooei, R. Gordon","doi":"10.1109/NMDC.2018.8605927","DOIUrl":"https://doi.org/10.1109/NMDC.2018.8605927","url":null,"abstract":"We investigate the electrical response of a device with sub-nanometer gaps, which potentially can be used as an ultrafast optical switch. In todays electronics, semiconductor devices at best have a picosecond response time. Making structural change is one way to achieve faster electronics. The Coulomb blockade effect in tunnel junctions can reproduce a highly nonlinear response current, which is required for a switch. However, a tiny capacitance is necessary for a femtosecond time constant. A sub-nanometer gap with a small surface area can satisfy both of these conditions. The nonlinear optical switching behavior of a sub-nanometer gap has been observed experimentally [1]. It is a potential candidate for an effective and low-cost switch with high speed operation. We fabricated a gold on silicon sample with sub-nanometer gaps filled by self-assembled monolayer and then we illuminated it with a femtosecond pulsed laser. We recorded the dark current and photocurrents of the sample with different incident powers. This experimental report can pave the way for harnessing high-speed switching in nanodevices with sub-nanometer gaps.","PeriodicalId":164481,"journal":{"name":"2018 IEEE 13th Nanotechnology Materials and Devices Conference (NMDC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129256547","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

An RRAM with a 2D Material Embedded Double Switching Layer for Neuromorphic Computing 一种用于神经形态计算的二维材料嵌入式双开关层RRAM

2018 IEEE 13th Nanotechnology Materials and Devices Conference (NMDC) Pub Date : 2018-10-01 DOI: 10.1109/NMDC.2018.8605915

P. Chen, Ruijing Ge, Jia-Wei Lee, C. Hsu, W. Hsu, D. Akinwande, M. Chiang

{"title":"An RRAM with a 2D Material Embedded Double Switching Layer for Neuromorphic Computing","authors":"P. Chen, Ruijing Ge, Jia-Wei Lee, C. Hsu, W. Hsu, D. Akinwande, M. Chiang","doi":"10.1109/NMDC.2018.8605915","DOIUrl":"https://doi.org/10.1109/NMDC.2018.8605915","url":null,"abstract":"Resistive random-access memory (RRAM) has shown great potential for neuromorphic engineering, due to its ability of emulating neural network and simple structure. To mimic the brain-learning behavior, two types of neural actions, short-term plasticity (STP) and long-term potentiation (LTP), should be imitated perfectly. In this work, we propose a unique RRAM cell with a double switching layer, in which a 2D material is embedded as a separation layer. Within a proper voltage range of stress, the mobile oxygen ions are blocked by the single atomic layer, and hence the subsequent relaxation of oxygen ions leads to a volatile switching characteristic. Owing to this volatile characteristic, the proposed device can mimic neural actions, STP and LTP, by a simple pulse train with different repetitions and frequencies without the complicated pulse settings of spike-timing-dependent plasticity (STDP). For various learning algorithms in future brain-inspired applications, different switching materials with different bind energies and relaxation times of oxygen ions can be utilized.","PeriodicalId":164481,"journal":{"name":"2018 IEEE 13th Nanotechnology Materials and Devices Conference (NMDC)","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124675615","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3

Bit Error Rate of Bacteria Communications Through Electrodynamics-Based of Ions Interaction in Processes of Phosphotransferase Systems 基于电动力学的细菌在磷酸转移酶系统中通信的误码率

2018 IEEE 13th Nanotechnology Materials and Devices Conference (NMDC) Pub Date : 2018-10-01 DOI: 10.1109/NMDC.2018.8605922

H. Nieto-Chaupis

引用次数: 2

Valence Band Anti-Crossing Analysis of Dilute Sulfur in ZnOl-xSxAlloys zno - xsxx合金中稀硫的价带抗交叉分析

2018 IEEE 13th Nanotechnology Materials and Devices Conference (NMDC) Pub Date : 2018-10-01 DOI: 10.1109/NMDC.2018.8605925

S. Alqahtani, S. Ahmed

{"title":"Valence Band Anti-Crossing Analysis of Dilute Sulfur in ZnOl-xSxAlloys","authors":"S. Alqahtani, S. Ahmed","doi":"10.1109/NMDC.2018.8605925","DOIUrl":"https://doi.org/10.1109/NMDC.2018.8605925","url":null,"abstract":"ZnO and related alloys are promising materials for application in photonics, electronics, piezoelectric nanogenerators and electromechanical devices. In this work, a Valence Band Anti-Crossing (VBAC) model is developed to analyze the energy bandgap of ZnO binary compound when it is lightly alloyed with anion sulfur (S) material. Minority anion alloy ZnOl-xSxexhibits unusual bowing of energy bandgap compared to cation alloying. The energy bandgap decreases dramatically from 3.37 eV to approximately 2.65 eV as the S composition increases to 100%. The main reason of the energy bandgap reduction is found to be the increase (up-shift) of the valence band edge (VBE) due to interaction between ZnO's extended VBE and the localized S defect energy state. The VBE of ZnO host material spilt into two sub-bands, the upper band E_ and the lower band E+, when the S atoms replace the O atoms. The overall computational model is based on a coupling of the Hamiltonian of the supercell based on a fully-atomistic 8-band Sp3tight-binding basis set including spin orbital interaction and the Valence Force- Field (VFF) model using Keating potentials for strain calculations.","PeriodicalId":164481,"journal":{"name":"2018 IEEE 13th Nanotechnology Materials and Devices Conference (NMDC)","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123827348","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Nanoparticle Composites as Functional Materials for Novel Devices: Chemical Sensing and Optoelectronic Applications 纳米颗粒复合材料作为新型器件的功能材料:化学传感和光电子应用

2018 IEEE 13th Nanotechnology Materials and Devices Conference (NMDC) Pub Date : 2018-10-01 DOI: 10.1109/NMDC.2018.8605845

H. Schlicke, T. Jochum, Sophia C. Bittinger, T. Vossmeyer, J. Niehaus, H. Weller

{"title":"Nanoparticle Composites as Functional Materials for Novel Devices: Chemical Sensing and Optoelectronic Applications","authors":"H. Schlicke, T. Jochum, Sophia C. Bittinger, T. Vossmeyer, J. Niehaus, H. Weller","doi":"10.1109/NMDC.2018.8605845","DOIUrl":"https://doi.org/10.1109/NMDC.2018.8605845","url":null,"abstract":"Nanoparticle composites are promising regarding their applications in novel electronic devices. These materials generally comprise nanoparticles embedded in matrices that consist e.g. of short molecules or polymers. Their optical, electronic, mechanical and sorption properties are manifold, widely tunable, and depend on the particle material as well as their matrix. We demonstrate the syntheses of different tailor-made nanoparticles and their integration into prototypical devices. On the one hand, composite materials of cross-linked gold nanoparticles (GNPs) are well-known for their chemiresistive properties. Here, we show a novel sensing method, employing these materials as micro-/nanoelectromechanical (MEMS/NEMS) chemical sensors. Nanometer-thin GNP membranes are fabricated and electrostatically actuated. The resulting static deflections and resonant vibrations are strongly influenced by the adsorption of volatile organic compounds, and can hence be employed as sensing signals. In combination with their chemiresistive properties such composites can thus act as multivariate sensing platforms. On the other hand, we present semiconductor nanoparticles synthesized following highly reproducible, high-throughput, continuous-flow syntheses. Due to the quantum-size effect, they offer absorption and emission features extending over the visible (CdSe/CdS) and infrared (PbS) range. Herein, we demonstrate the integration of such particles as emitters in QLEDs and highlight their potential as absorber materials in IR photodetectors.","PeriodicalId":164481,"journal":{"name":"2018 IEEE 13th Nanotechnology Materials and Devices Conference (NMDC)","volume":"247 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123973270","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3

A Highly Efficient Bilayer Graphene-HgCdTe Heterojunction Based $p^{+}-n$ Photodetector for Long Wavelength Infrared (LWIR) 基于双层石墨烯- hgcdte异质结的高效p^{+}-n$长波红外探测器

2018 IEEE 13th Nanotechnology Materials and Devices Conference (NMDC) Pub Date : 2018-10-01 DOI: 10.1109/NMDC.2018.8605848

S. Bansal, P. Jain, N. Gupta, A. Singh, Naveen Kumar, Sanjeev Kumar, N. Sardana

{"title":"A Highly Efficient Bilayer Graphene-HgCdTe Heterojunction Based $p^{+}-n$ Photodetector for Long Wavelength Infrared (LWIR)","authors":"S. Bansal, P. Jain, N. Gupta, A. Singh, Naveen Kumar, Sanjeev Kumar, N. Sardana","doi":"10.1109/NMDC.2018.8605848","DOIUrl":"https://doi.org/10.1109/NMDC.2018.8605848","url":null,"abstract":"In this paper, <tex>$p^{+}$</tex> =bllayer graphene (BLG)/n@ <tex>$mathbf{Hg}_{0.7783}mathbf{Cdo}_{0.2217}$</tex> Te heterojunction based long wavelength infrared (LWIR: 2–12 J.1m) photodetector is reported. The LWIR radiations are absorbed in lightly doped n- <tex>$text{Hg}_{0.7783}text{Cd}_{0.2217}$</tex> Te active layer. The drift-diffusion approach is used for the simulation of the device. Different recombination mechanism models such as Shockley-Read-Hall, Auger, and optical are considered for computing dark current. The photodetector exhibits dark current of 3.5 pA, photocurrent of 1.9 nA, and <tex>$I_{ph}/I_{dark}$</tex> ratio of 543 at −1 V bias. The maximum external quantum efficiency <tex>$(QE_{ext})$</tex> of 88.38%, photocurrent responsivity of 4.5 <tex>$text{AW}^{-1}$</tex>, specific detectivity (D*) of <tex>$1.8times 10^{15}text{cmHz}^{1/2}mathrm{W}^{-1}$</tex>, noise equivalent power (NEP) of <tex>$3.53times 10^{-19} mathrm{W}$</tex>, and the 3-dB bandwidth of about 64.8 GHz at −0.5 V is achieved at 77 K, confirms the suitability of proposed photodetector for low noise applications.","PeriodicalId":164481,"journal":{"name":"2018 IEEE 13th Nanotechnology Materials and Devices Conference (NMDC)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114238999","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 4