{"title":"A Quasi-Analytic Behavioral Model for the Single-electron Transistor for Hybrid MOS/SET Circuit Simulation","authors":"Francisco Castro, I. Savidis, Arturo Sarmiento","doi":"10.1109/NMDC.2018.8605730","DOIUrl":null,"url":null,"abstract":"A methodology to incorporate single-electron transistors (SET) into the IC design flow is introduced in this paper. A SET model is developed that is defined as a VERILOG-A module that can be used for SPICE-like simulation of hybrid circuits containing SET and MOS transistors. The SET model is formulated in a semi-symbolic form, which provides insight and intuition on the functionality of the device. The model was verified on a SET-only and hybrid (SET and MOS transistors) implementation of an inverter. The proposed model is compared with a verified analytical model that applies a master equation, which results in errors of approximately 1.6% for a SET-only inverter and 1.3% for a hybrid inverter.","PeriodicalId":164481,"journal":{"name":"2018 IEEE 13th Nanotechnology Materials and Devices Conference (NMDC)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE 13th Nanotechnology Materials and Devices Conference (NMDC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NMDC.2018.8605730","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
A methodology to incorporate single-electron transistors (SET) into the IC design flow is introduced in this paper. A SET model is developed that is defined as a VERILOG-A module that can be used for SPICE-like simulation of hybrid circuits containing SET and MOS transistors. The SET model is formulated in a semi-symbolic form, which provides insight and intuition on the functionality of the device. The model was verified on a SET-only and hybrid (SET and MOS transistors) implementation of an inverter. The proposed model is compared with a verified analytical model that applies a master equation, which results in errors of approximately 1.6% for a SET-only inverter and 1.3% for a hybrid inverter.