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2020 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)最新文献

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A 20GHz LC-VCO for Satellite Microwave Communication Application 用于卫星微波通信的20GHz LC-VCO
2020 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2020-07-01 DOI: 10.1109/IMWS-AMP49156.2020.9199678
Yu Fu, Hao Yao, Yixuan Dai, Yi Wu, Guochi Huang
{"title":"A 20GHz LC-VCO for Satellite Microwave Communication Application","authors":"Yu Fu, Hao Yao, Yixuan Dai, Yi Wu, Guochi Huang","doi":"10.1109/IMWS-AMP49156.2020.9199678","DOIUrl":"https://doi.org/10.1109/IMWS-AMP49156.2020.9199678","url":null,"abstract":"In this paper, a fully customized U-shape inductor is designed based on the UMC 40nm standard CMOS process. The customized inductor is placed in parallel with varactors to realize a LC resonating network. In the present voltage-controlled oscillator (VCO) circuit, a cross coupling NMOS transistor pair together with a PMOS current source are used to generate negative-resistance for supporting constant oscillating. The measurement results show that the oscillation frequency of the LC-VCO ranges from 17.034GHz to 20.207GHz under 0 to 1.2V tuning voltage. The measured phase noise at 1MHz offset frequency across the entire frequency tuning range is -95.53dBc/Hz ~ -98.64dBc/Hz. The whole circuit, including biasing circuit and buffer stages, consumes 31.6mW under 1.2V power supply.","PeriodicalId":163276,"journal":{"name":"2020 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116946364","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Tunable Frequency Selection Surface Based on 2.5-D Structure 基于2.5维结构的可调频率选择曲面
2020 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2020-07-01 DOI: 10.1109/IMWS-AMP49156.2020.9199750
Fukang Li, Xiaoxiang He, Yang Yang, Chaorui Zhang
{"title":"Tunable Frequency Selection Surface Based on 2.5-D Structure","authors":"Fukang Li, Xiaoxiang He, Yang Yang, Chaorui Zhang","doi":"10.1109/IMWS-AMP49156.2020.9199750","DOIUrl":"https://doi.org/10.1109/IMWS-AMP49156.2020.9199750","url":null,"abstract":"This paper presents a tunable frequency selective surface based on a 2.5-D structure. The structure is connected by a 2.5-D structure on the basis of the gradual bending line, which further extends the length of the resonant patch. In addition, active devices are also introduced into the structure. PIN diode, variable-capacitance diode and inductor are simulated and observed respectively. While ensuring miniaturization, the resonant frequency can be tuned or switched. The simulation results show that, when different active devices are loaded, bandstop characteristics of different frequency bands can be realized: (1) Loading PIN diode, the resonant frequency can be switched between 1.992GH and 3.696GHz; (2) Load the varactor diode, the tunable frequency range is 2.01GHz-2.67GHz; (3) Load variable inductance, the tunable frequency range is 0.576GHz-1. 836GHz. At the same time, the structure also shows good stability for different incident angles of electromagnetic waves.","PeriodicalId":163276,"journal":{"name":"2020 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127351906","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Design of a broadband communication array element antenna in K-band k波段宽带通信阵列元件天线的设计
2020 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2020-07-01 DOI: 10.1109/IMWS-AMP49156.2020.9199663
Longwei He, Xiao-fei Wang, Guodong Liu, Wei Wang, Shi-gang Zhou
{"title":"Design of a broadband communication array element antenna in K-band","authors":"Longwei He, Xiao-fei Wang, Guodong Liu, Wei Wang, Shi-gang Zhou","doi":"10.1109/IMWS-AMP49156.2020.9199663","DOIUrl":"https://doi.org/10.1109/IMWS-AMP49156.2020.9199663","url":null,"abstract":"With the development of communication frequency to K-band, array antenna has become a trend of communication antenna. The microstrip antenna has the characteristics of simple fabrication, easy integration and low cost. It has become a main antenna of array element antenna. With the continuous shortening of working wavelength, the actual processing degree of unit antenna becomes more complex, and the structural accuracy requirements become more stringent. In this paper, a linearly polarized K-band array element is proposed, which uses metallized via holes as electrical walls to reduce the degree of mutual coupling between elements. Finally, the simulation results show that the return loss of the unit antenna is less than -10dB in the whole required working frequency band, which meets the requirements of communication antenna.","PeriodicalId":163276,"journal":{"name":"2020 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124817737","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Bands-Spanned Radiation-Differentiated Antenna (BSRDA) 跨波段辐射差分天线(BSRDA)
2020 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2020-07-01 DOI: 10.1109/IMWS-AMP49156.2020.9199681
Lei Ge, Xujun Yang
{"title":"Bands-Spanned Radiation-Differentiated Antenna (BSRDA)","authors":"Lei Ge, Xujun Yang","doi":"10.1109/IMWS-AMP49156.2020.9199681","DOIUrl":"https://doi.org/10.1109/IMWS-AMP49156.2020.9199681","url":null,"abstract":"Bands-spanned radiation-differentiated antenna (BSRDA), with the ability of offering different radiation properties (polarization direction/radiation pattern) at different frequency bands, is urgently desired with the blooming of various wireless services. In this paper, a single-port BSRDA is proposed based on a single-layered patch antenna. The inner corner-truncated square patch is excited by a direct probe to provide broadside radiation at 3500 MHz, whereas the outer corner-truncated ring patch with four shorting posts and four notches is energized by the coupling to generate omnidirectional radiation at 2485 MHz. To verify the proposed design, a fully functional prototype was fabricated. Measured results show that 10-dB impedance bandwidths of 22 MHz and 273 MHz, peak gains of 1.98 dBi and 8.46 dBi at the two bands were obtained, respectively. Owing to the features of compact and simple structure, the proposed BSRDA is suitable for applications where multiple wireless services are demanded.","PeriodicalId":163276,"journal":{"name":"2020 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126783641","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Design of Broadband Amplifier Based on InP DHBT 基于InP DHBT的宽带放大器设计
2020 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2020-07-01 DOI: 10.1109/IMWS-AMP49156.2020.9199765
Hou Yanfei, Yu Weihua, Sun Yan, Cheng Wei
{"title":"Design of Broadband Amplifier Based on InP DHBT","authors":"Hou Yanfei, Yu Weihua, Sun Yan, Cheng Wei","doi":"10.1109/IMWS-AMP49156.2020.9199765","DOIUrl":"https://doi.org/10.1109/IMWS-AMP49156.2020.9199765","url":null,"abstract":"This paper presents a design of broadband high-flatness amplifier based on 0.5-µm InP double heterojunction bipolar transistor (DHBT) technology. The proposed amplifier contains five stages. To achieve the purpose of increasing gain flatness and bandwidth, the matching networks were combined with the bias circuits. The simulation results demonstrate a peak gain of 19.5 dB at 140 GHz and the gain is greater than 17 dB over the broad frequency range of 55 to 170 GHz. The saturation output power achieves 3.31 dBm at 140 GHz with DC power consumption 72 mW. The proposed amplifier has a compact chip size of only 1.4x0.9 mm2including testing input/output pads.","PeriodicalId":163276,"journal":{"name":"2020 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126950202","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Dual-Band Antenna Made of Slow-Wave Substrate Integrated Waveguide 慢波基片集成波导双频天线
2020 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2020-07-01 DOI: 10.1109/IMWS-AMP49156.2020.9199708
J. Luo, Peng Huang, Dajun Lei, Zhuguo Li, Liangrong Li
{"title":"Dual-Band Antenna Made of Slow-Wave Substrate Integrated Waveguide","authors":"J. Luo, Peng Huang, Dajun Lei, Zhuguo Li, Liangrong Li","doi":"10.1109/IMWS-AMP49156.2020.9199708","DOIUrl":"https://doi.org/10.1109/IMWS-AMP49156.2020.9199708","url":null,"abstract":"In this paper, a dual-band and broadband slow-wave substrate integrated waveguide (SW-SIW) structure antenna is designed and analyzed. The geometry of the proposed antenna consists of the SIW cavity structure and fractional slots,including one ring slot and three rectangular slots etched on the radiation patch. The ring slot and rectangular slots are etched on the radiation patch to achieve the dual-band, broadband and slow wave characteristics. The simulated results show that the -10 dB impedance bandwidth of the presented antenna is 14.2% (12.04 GHz-13.88 GHz) and 3.25% (14.15 GHz-14.58 GHz). The peak gains of the dual-band antenna are 8.38 dBi and 8.18 dBi. In conclusion, the study indicates that the proposed antenna has dual-band, broadband, high gain, and miniaturized performances. Further work will be devoted to prototype fabrication and optimization.","PeriodicalId":163276,"journal":{"name":"2020 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129202673","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Improvement of Thermal Endurance for Integrated Millimeter-Wave Silicon IMPATT Device in µm2-Scale 微米级集成毫米波硅IMPATT器件热耐久性的改进
2020 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2020-07-01 DOI: 10.1109/IMWS-AMP49156.2020.9199695
Wogong Zhang, Jinzhong Yu, J. Schulze, E. Kasper
{"title":"Improvement of Thermal Endurance for Integrated Millimeter-Wave Silicon IMPATT Device in µm2-Scale","authors":"Wogong Zhang, Jinzhong Yu, J. Schulze, E. Kasper","doi":"10.1109/IMWS-AMP49156.2020.9199695","DOIUrl":"https://doi.org/10.1109/IMWS-AMP49156.2020.9199695","url":null,"abstract":"Based on the fact that the avalanche frequency of impact-ionization avalanche transit-time (IMPATT) diode is proportional to the square-root of DC biasing current density, more DC current injection is necessary to push the negative differential resistances (NDRs) into higher frequency regime. This leads to a serious thermal endurance problem for IMPATT devices in monolithic integration scenario, since the pn-junction area reaches only µm2-scale compared to traditional discrete cases of mm2-scale and on the other side there is lack of huge heat sink commonly applied in each discrete IMPATT component design. After characterizing series of fabricated IMPATT devices with pn-junction area of 30 × 2 µm2; 30 × 4 µm2; 30 × 6 µm2; 30 × 10 µm2, their avalanche frequencies haven been extracted and plotted over varied square-root of DC biasing current densities. The discrepancy between the estimated and measured profiles has confirmed and explained exactly the usually ignored temperature effect. Scanning electron microscopy (SEM) images have been taken for a burned out IMPATT diode of 30 × 2 µm2. The weak point did not occur at the expected “fragile” pn-junction, but at the metallic interconnect. This triggered an improvement of a new device layout design. The SEM images of two IMPATT diodes with the same pn-junction (30 × 2 µm2) but different layouts in the burn-out test verifies the improvement of device thermal endurance. Additionally, the IMp ATT diode with the new layout design offered 7 mA more regarding the maximum injected DC biasing current than the one with old layout design. This ensures the overall device robustness regarding thermal endurance for further circuit design.","PeriodicalId":163276,"journal":{"name":"2020 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123861478","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Two Dimension Frequency Scanning Antenna 二维频率扫描天线
2020 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2020-07-01 DOI: 10.1109/IMWS-AMP49156.2020.9199707
Xu Han, S. Ding, Fengzhou Dai, Qingyong Chen
{"title":"Two Dimension Frequency Scanning Antenna","authors":"Xu Han, S. Ding, Fengzhou Dai, Qingyong Chen","doi":"10.1109/IMWS-AMP49156.2020.9199707","DOIUrl":"https://doi.org/10.1109/IMWS-AMP49156.2020.9199707","url":null,"abstract":"In this paper, a high-frequency frequency scanning antenna based on metasurface is designed. The antenna proposed here consists of three parts: an 1 × 16 unequal divider, 16 BJ900 waveguides and 160 metasurface. The proposed antenna is fed by a standard waveguide BJ900 with periodic metasurface covered on it. The working band is 76–81 GHz. To realize two-dimension beam scanning, an unequal divider is designed. After the final optimization, we can get from the simulation results that the working angle is 30° in both two dimension and the radiation efficiency can reach -0.1 dB. The total realized gain of the antenna can reach 20 dB.","PeriodicalId":163276,"journal":{"name":"2020 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123876613","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Diode-based Wideband Reconfigurable Power Amplifier 基于二极管的宽带可重构功率放大器
2020 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2020-07-01 DOI: 10.1109/IMWS-AMP49156.2020.9199754
Qi Cai, Tianyu Zhang, W. Che
{"title":"A Diode-based Wideband Reconfigurable Power Amplifier","authors":"Qi Cai, Tianyu Zhang, W. Che","doi":"10.1109/IMWS-AMP49156.2020.9199754","DOIUrl":"https://doi.org/10.1109/IMWS-AMP49156.2020.9199754","url":null,"abstract":"A wideband reconfigurable power amplifier (PA) is presented, which consists of a diode-based wideband reconfigurable impedance matching network. The reconfigurable matching network can transfer different complex impedances to 50 Ohm load at different frequencies, in which the PIN diodes are used as the reconfigurable components. For demonstration, a wideband reconfigurable PA is designed at 1.7-2.7 GHz and 3.1-3.9 GHz to cover the frequency range of 4G and 5G. The simulation results indicate that the designed PA achieves 38.1-38.7 dBm output power and 53.1%-65% drain efficiency at the first band, while 37.1-38.9 dBm output power and 50.3%-64.5% drain efficiency at the second band.","PeriodicalId":163276,"journal":{"name":"2020 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123239394","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Out-of-band RCS Reduction of a Dipole Antenna Based on Frequency-Selective Metasurface 基于频率选择超表面的偶极子天线带外RCS降低
2020 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2020-07-01 DOI: 10.1109/IMWS-AMP49156.2020.9199687
Boyu Sima, Ke Chen, Yijun Feng
{"title":"Out-of-band RCS Reduction of a Dipole Antenna Based on Frequency-Selective Metasurface","authors":"Boyu Sima, Ke Chen, Yijun Feng","doi":"10.1109/IMWS-AMP49156.2020.9199687","DOIUrl":"https://doi.org/10.1109/IMWS-AMP49156.2020.9199687","url":null,"abstract":"This paper presents an approach to design a dipole antenna with low out-of-band radar cross section (RCS) and relatively high gain while without absorptive material using. A reflective metasurface (also called “Meta-mirror”) with frequency dependent diffusive scattering property is used as the ground plane of the dipole antenna to effectively reduce the out-of-band RCS and maintain high gain at the in-band frequencies. The metasurface structures is realized by random distribution of 1-bit meta-mirror elements and the two elements are composed with same metallic pattern with different orientations. Compared with the reference antenna with normal PEC ground plane, the radiation characteristics of the proposed array is maintained with a measured peak gain of 6.5 dBi. Meanwhile, more than 10 dB two-sided out-of-band RCS reduction is achieved from 7.6 GHz to 8 GHz and 11.5 GHz to 15 GHz.","PeriodicalId":163276,"journal":{"name":"2020 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"203 ","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"113983248","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
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