Tunable Frequency Selection Surface Based on 2.5-D Structure

2020 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2020-07-01 DOI:10.1109/IMWS-AMP49156.2020.9199750

Fukang Li, Xiaoxiang He, Yang Yang, Chaorui Zhang

{"title":"Tunable Frequency Selection Surface Based on 2.5-D Structure","authors":"Fukang Li, Xiaoxiang He, Yang Yang, Chaorui Zhang","doi":"10.1109/IMWS-AMP49156.2020.9199750","DOIUrl":null,"url":null,"abstract":"This paper presents a tunable frequency selective surface based on a 2.5-D structure. The structure is connected by a 2.5-D structure on the basis of the gradual bending line, which further extends the length of the resonant patch. In addition, active devices are also introduced into the structure. PIN diode, variable-capacitance diode and inductor are simulated and observed respectively. While ensuring miniaturization, the resonant frequency can be tuned or switched. The simulation results show that, when different active devices are loaded, bandstop characteristics of different frequency bands can be realized: (1) Loading PIN diode, the resonant frequency can be switched between 1.992GH and 3.696GHz; (2) Load the varactor diode, the tunable frequency range is 2.01GHz-2.67GHz; (3) Load variable inductance, the tunable frequency range is 0.576GHz-1. 836GHz. At the same time, the structure also shows good stability for different incident angles of electromagnetic waves.","PeriodicalId":163276,"journal":{"name":"2020 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMWS-AMP49156.2020.9199750","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

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Abstract

This paper presents a tunable frequency selective surface based on a 2.5-D structure. The structure is connected by a 2.5-D structure on the basis of the gradual bending line, which further extends the length of the resonant patch. In addition, active devices are also introduced into the structure. PIN diode, variable-capacitance diode and inductor are simulated and observed respectively. While ensuring miniaturization, the resonant frequency can be tuned or switched. The simulation results show that, when different active devices are loaded, bandstop characteristics of different frequency bands can be realized: (1) Loading PIN diode, the resonant frequency can be switched between 1.992GH and 3.696GHz; (2) Load the varactor diode, the tunable frequency range is 2.01GHz-2.67GHz; (3) Load variable inductance, the tunable frequency range is 0.576GHz-1. 836GHz. At the same time, the structure also shows good stability for different incident angles of electromagnetic waves.

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基于2.5维结构的可调频率选择曲面

提出了一种基于2.5维结构的可调频率选择曲面。该结构在渐变弯曲线的基础上通过2.5维结构连接，进一步延长了谐振贴片的长度。此外，在结构中还引入了有源器件。分别对PIN二极管、变电容二极管和电感进行了仿真和观察。在保证小型化的同时，谐振频率可以调谐或切换。仿真结果表明，加载不同有源器件时，可实现不同频段的带阻特性:(1)加载PIN二极管，谐振频率可在1.992GH ~ 3.696GHz之间切换;(2)加载变容二极管，可调频率范围为2.01GHz-2.67GHz;(3)负载可变电感，可调频率范围为0.576GHz-1。836 ghz。同时，该结构在不同的电磁波入射角下也表现出良好的稳定性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2020 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)

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