基于InP DHBT的宽带放大器设计

2020 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2020-07-01 DOI:10.1109/IMWS-AMP49156.2020.9199765

Hou Yanfei, Yu Weihua, Sun Yan, Cheng Wei

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引用次数: 1

摘要

提出了一种基于0.5µm InP双异质结双极晶体管(DHBT)技术的宽带高平坦度放大器设计。所提出的放大器包含五个级。为了达到提高增益平坦度和带宽的目的，将匹配网络与偏置电路相结合。仿真结果表明，在140 GHz时的峰值增益为19.5 dB，在55 ~ 170 GHz的宽频率范围内，增益大于17 dB。140ghz时饱和输出功率达到3.31 dBm，直流功耗72mw。所提出的放大器具有紧凑的芯片尺寸，只有1.4 × 0.9 mm2，包括测试输入/输出垫。

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Design of Broadband Amplifier Based on InP DHBT

This paper presents a design of broadband high-flatness amplifier based on 0.5-µm InP double heterojunction bipolar transistor (DHBT) technology. The proposed amplifier contains five stages. To achieve the purpose of increasing gain flatness and bandwidth, the matching networks were combined with the bias circuits. The simulation results demonstrate a peak gain of 19.5 dB at 140 GHz and the gain is greater than 17 dB over the broad frequency range of 55 to 170 GHz. The saturation output power achieves 3.31 dBm at 140 GHz with DC power consumption 72 mW. The proposed amplifier has a compact chip size of only 1.4x0.9 mm2including testing input/output pads.

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2020 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)

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