A Diode-based Wideband Reconfigurable Power Amplifier

2020 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2020-07-01 DOI:10.1109/IMWS-AMP49156.2020.9199754

Qi Cai, Tianyu Zhang, W. Che

引用次数: 1

Abstract

A wideband reconfigurable power amplifier (PA) is presented, which consists of a diode-based wideband reconfigurable impedance matching network. The reconfigurable matching network can transfer different complex impedances to 50 Ohm load at different frequencies, in which the PIN diodes are used as the reconfigurable components. For demonstration, a wideband reconfigurable PA is designed at 1.7-2.7 GHz and 3.1-3.9 GHz to cover the frequency range of 4G and 5G. The simulation results indicate that the designed PA achieves 38.1-38.7 dBm output power and 53.1%-65% drain efficiency at the first band, while 37.1-38.9 dBm output power and 50.3%-64.5% drain efficiency at the second band.

查看原文本刊更多论文

基于二极管的宽带可重构功率放大器

提出了一种宽带可重构功率放大器，该放大器由基于二极管的宽带可重构阻抗匹配网络组成。可重构匹配网络可以在不同频率下将不同的复阻抗传递给50欧姆负载，其中PIN二极管作为可重构元件。为了进行演示，设计了1.7-2.7 GHz和3.1-3.9 GHz的宽带可重构PA，以覆盖4G和5G的频率范围。仿真结果表明，所设计的放大器在第一频段的输出功率为38.1 ~ 38.7 dBm，漏极效率为53.1% ~ 65%;在第二频段的输出功率为37.1 ~ 38.9 dBm，漏极效率为50.3% ~ 64.5%。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

2020 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)

自引率

0.00%

发文量