Design of Broadband Amplifier Based on InP DHBT

Abstract

This paper presents a design of broadband high-flatness amplifier based on 0.5-µm InP double heterojunction bipolar transistor (DHBT) technology. The proposed amplifier contains five stages. To achieve the purpose of increasing gain flatness and bandwidth, the matching networks were combined with the bias circuits. The simulation results demonstrate a peak gain of 19.5 dB at 140 GHz and the gain is greater than 17 dB over the broad frequency range of 55 to 170 GHz. The saturation output power achieves 3.31 dBm at 140 GHz with DC power consumption 72 mW. The proposed amplifier has a compact chip size of only 1.4x0.9 mm2including testing input/output pads.