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2019 IEEE Asia-Pacific Microwave Conference (APMC)最新文献

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A Low Noise VCO with Common-Tail Inductor in 180nm CMOS Technology 180nm CMOS共尾电感低噪声压控振荡器
2019 IEEE Asia-Pacific Microwave Conference (APMC) Pub Date : 2019-12-01 DOI: 10.1109/APMC46564.2019.9038739
Yu Peng, Huihua Liu, Shuangfeng Kong, Yi-ming Yu, Chenxi Zhao, Yunqiu Wu, K. Kang
{"title":"A Low Noise VCO with Common-Tail Inductor in 180nm CMOS Technology","authors":"Yu Peng, Huihua Liu, Shuangfeng Kong, Yi-ming Yu, Chenxi Zhao, Yunqiu Wu, K. Kang","doi":"10.1109/APMC46564.2019.9038739","DOIUrl":"https://doi.org/10.1109/APMC46564.2019.9038739","url":null,"abstract":"This paper presents a low noise voltage-controlled oscillator (VCO) with common-tail inductor. The “common-mode coupling” topology is adopted to reduce the phase noise and to simplify the coupling network. The proposed common-tail inductor could filter the noise and couple the common-mode voltage from two oscillators. Meanwhile, the common tail inductor structure decreases the number of tail inductor. The proposed VCO is designed and implemented utilizing 180 nm 1P6M CMOS process. The measurement result shows the phase noise is −124 dBc/Hz at 1 MHz offset from 6.24 GHz, and the figure of merit (FOM) is about 187 dBc/Hz while consuming 20 mW with a 1-V supply. The core circuit occupies an area of $1mathrm{mm}times 0.8mathrm{mm}$.","PeriodicalId":162908,"journal":{"name":"2019 IEEE Asia-Pacific Microwave Conference (APMC)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127991005","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Highly Scalable Distributed High Electron Mobility Transistor Model 高可扩展分布式高电子迁移率晶体管模型
2019 IEEE Asia-Pacific Microwave Conference (APMC) Pub Date : 2019-12-01 DOI: 10.1109/APMC46564.2019.9038318
F. Heinz, D. Schwantuschke, A. Leuther, O. Ambacher
{"title":"Highly Scalable Distributed High Electron Mobility Transistor Model","authors":"F. Heinz, D. Schwantuschke, A. Leuther, O. Ambacher","doi":"10.1109/APMC46564.2019.9038318","DOIUrl":"https://doi.org/10.1109/APMC46564.2019.9038318","url":null,"abstract":"This paper reports a scalable small-signal modeling approach for III-V high electron mobility transistors. The model utilizes a distributed six port description of the three transistor electrodes which improves the model validity up to very long finger lengths. The planar transistor structure is modeled directly as given by its layout, which enables realistic modeling of coupling effects rather than using an abstract shell-description. A wide range of bias points is covered using third order Taylor expansions to calculate the bias dependent parameters. The modeling approach is verified at the example of an InGaAs metamorphic high electron mobility transistor technology with 50 nm gate length.","PeriodicalId":162908,"journal":{"name":"2019 IEEE Asia-Pacific Microwave Conference (APMC)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132073597","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Research on 330GHz Subharmonic Mixer Based on Global Design Method 基于全局设计方法的330GHz次谐波混频器研究
2019 IEEE Asia-Pacific Microwave Conference (APMC) Pub Date : 2019-12-01 DOI: 10.1109/APMC46564.2019.9038413
Huali Zhu, Yong Zhang, Quan Zheng, Zhenyu Feng, R. Xu, B. Yan
{"title":"Research on 330GHz Subharmonic Mixer Based on Global Design Method","authors":"Huali Zhu, Yong Zhang, Quan Zheng, Zhenyu Feng, R. Xu, B. Yan","doi":"10.1109/APMC46564.2019.9038413","DOIUrl":"https://doi.org/10.1109/APMC46564.2019.9038413","url":null,"abstract":"The global design method (GDM) is employed instead of the traditional subdivision design method based on circuit unit in the letter. Under the GDM, the circuit is divided into independent transmission line unit, and the complete equivalent circuit is established together with the diode model. The GDM focuses on the overall performance, so it is more efficient. A 330GHz subharmonic mixer based on GDM is presented. The measured results of the mixer show that the optimal conversion loss is 5.1dB near 324GHz.","PeriodicalId":162908,"journal":{"name":"2019 IEEE Asia-Pacific Microwave Conference (APMC)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132305587","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Analysis of Random Vibration Testing & Precautions for Failure Avoidance 随机振动试验分析及避免故障的注意事项
2019 IEEE Asia-Pacific Microwave Conference (APMC) Pub Date : 2019-12-01 DOI: 10.1109/APMC46564.2019.9038269
Vipin Kumar, Mahadev Sarkar
{"title":"Analysis of Random Vibration Testing & Precautions for Failure Avoidance","authors":"Vipin Kumar, Mahadev Sarkar","doi":"10.1109/APMC46564.2019.9038269","DOIUrl":"https://doi.org/10.1109/APMC46564.2019.9038269","url":null,"abstract":"The purpose of this article is to understand importance of environmental stress screening with special emphasis on random vibration test, risk assessment linked with system which is subjected to such test. Well-explained techniques of filtering sources of error are explained with special focus on vibration fixture design. Finally explained concept of structural research and procedure to carry out test while covering precaution for failure avoidance of any electronic system. It allows a system to operate to its full capability when exposed to such harsh environment of random vibration.","PeriodicalId":162908,"journal":{"name":"2019 IEEE Asia-Pacific Microwave Conference (APMC)","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132312059","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
A Dual Band Gysel Power Divider with Wide Band Ratio 一种宽频带比双频陀螺功率分配器
2019 IEEE Asia-Pacific Microwave Conference (APMC) Pub Date : 2019-12-01 DOI: 10.1109/APMC46564.2019.9038792
Aijaz M. Zaidi, B. Kanaujia, M. Beg, Vikrant Kaim, Mainuddin
{"title":"A Dual Band Gysel Power Divider with Wide Band Ratio","authors":"Aijaz M. Zaidi, B. Kanaujia, M. Beg, Vikrant Kaim, Mainuddin","doi":"10.1109/APMC46564.2019.9038792","DOIUrl":"https://doi.org/10.1109/APMC46564.2019.9038792","url":null,"abstract":"In this paper a dual band Gysel power divider (GPD) with wide band ratio operating capability has been proposed. It has been developed by replacing each λ/4 transmission line of the traditional GPD by the dual-band λ/4 transmission line. In order to validate the approach a dual band GPD for 1.0 GHz and 5.0GHz operating frequencies has been developed and tested. Compared to the existing GPDs in the literature, the proposed GPD is novel in terms of its working band ratio (3.25–11.25).","PeriodicalId":162908,"journal":{"name":"2019 IEEE Asia-Pacific Microwave Conference (APMC)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134529656","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
kQ-Theory for MIMO IPT MIMO IPT的kq理论
2019 IEEE Asia-Pacific Microwave Conference (APMC) Pub Date : 2019-12-01 DOI: 10.1109/APMC46564.2019.9038276
Quang-Thang Duong, M. Okada
{"title":"kQ-Theory for MIMO IPT","authors":"Quang-Thang Duong, M. Okada","doi":"10.1109/APMC46564.2019.9038276","DOIUrl":"https://doi.org/10.1109/APMC46564.2019.9038276","url":null,"abstract":"This work briefly reviews kQ-theory as a tool for predicting the maximal achievable efficiency of inductive power transfer (IPT) systems with arbitrary numbers of transmitters and receivers. Using this theory, we will benchmark various multiple-input multiple-output (MIMO) IPT topologies in comparison with conventional single-input single-output (SISO) IPT. Simulation results reveal that although MIMO topologies do not outperform their SISO counterpart under perfect coil alignment, they significantly improve the effiency when there is orientation misalignment between the transmitters and the receivers.","PeriodicalId":162908,"journal":{"name":"2019 IEEE Asia-Pacific Microwave Conference (APMC)","volume":"206 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133917009","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A $X-/K_{mathrm{u}}$-Band QFN-Packaged GaAs LNA Supporting Dual-Polarization Signal Reception A $X-/K_{ mathm {u}}$- band支持双极化信号接收的qfn封装GaAs LNA
2019 IEEE Asia-Pacific Microwave Conference (APMC) Pub Date : 2019-12-01 DOI: 10.1109/APMC46564.2019.9038788
Chun Wang, Kuang-Yu Chen, Yu-Ling Lee, Chun-Hsing Li
{"title":"A $X-/K_{mathrm{u}}$-Band QFN-Packaged GaAs LNA Supporting Dual-Polarization Signal Reception","authors":"Chun Wang, Kuang-Yu Chen, Yu-Ling Lee, Chun-Hsing Li","doi":"10.1109/APMC46564.2019.9038788","DOIUrl":"https://doi.org/10.1109/APMC46564.2019.9038788","url":null,"abstract":"A $X-/K_{mathrm{u}}$-band low-noise amplifier (LNA) with quad flat no-leads (QFN) packaging for the satellite communication application is proposed in this work. The LNA is able to support the reception of dual horizontally (H) and vertically (V) polarized signals, increasing the channel capacity. The parasitic effect of the QFN package is captured by a 3D electromagnetic simulator and is then co-designed with the LNA to achieve simultaneous noise and impedance matching at the band of interest. Realized in a $0.15-mu mathrm{m}$ GaAs pHEMT technology, the proposed QFN-packaged LNA can provide power gain of 20.6 and 21.6 dB while having 3-dB bandwidth from 10.7 to 13.1 GHz and minimum noise figure (NF) of 1.3 dB for the H- and V-polarization channels, respectively. The power consumption is only 43.2 mW from a 1-V supply.","PeriodicalId":162908,"journal":{"name":"2019 IEEE Asia-Pacific Microwave Conference (APMC)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132890403","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A 5.6-GHz Class-DE Power Amplifier with Reduced Voltage Stress in 22-nm FDSOI CMOS 一种22纳米FDSOI CMOS低电压应力的5.6 ghz de类功率放大器
2019 IEEE Asia-Pacific Microwave Conference (APMC) Pub Date : 2019-12-01 DOI: 10.1109/APMC46564.2019.9038363
Matthew Love, M. Thian, F. van der Wilt, K. van Hartingsveldt, K. Kianush
{"title":"A 5.6-GHz Class-DE Power Amplifier with Reduced Voltage Stress in 22-nm FDSOI CMOS","authors":"Matthew Love, M. Thian, F. van der Wilt, K. van Hartingsveldt, K. Kianush","doi":"10.1109/APMC46564.2019.9038363","DOIUrl":"https://doi.org/10.1109/APMC46564.2019.9038363","url":null,"abstract":"This paper presents a 5.6 GHz Class-DE power amplifier (PA) with reduced voltage stress compared to classical PA designs. CMOS PAs are susceptible to a number of breakdown phenomena such as drain oxide breakdown and hot-carrier injection (HCI) which can significantly reduce their lifespan. The Class-DE amplifier is a hard-switching device which minimizes voltage-current overlap across the channel which significantly reduces the risk of HCI effects. The PA does not use an RF choke which limits the peak drain voltage to VDD, limiting the risk of drain oxide breakdown. The driver circuit gives a duty cycle below 50% and ensures that each transistor is almost completely off before the other has turned on. The PA achieves 47.9% power-added efficiency, 22.2 dBm output power, and 28.2 dB gain with a single 2.2 V supply voltage. Transient simulations of the PA's drain currents and voltages confirm the low current-voltage overlap which shows that the PA has much less risk of HCI effects than classical PA designs.","PeriodicalId":162908,"journal":{"name":"2019 IEEE Asia-Pacific Microwave Conference (APMC)","volume":"191 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133515730","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A Ka-Band Class-C BiCMOS VCO with Temperature Compensation 带温度补偿的ka波段c类BiCMOS压控振荡器
2019 IEEE Asia-Pacific Microwave Conference (APMC) Pub Date : 2019-12-01 DOI: 10.1109/APMC46564.2019.9038876
Qiuwei Wu, Xiaoyong Li, Xiaopeng Yu, J. Jin
{"title":"A Ka-Band Class-C BiCMOS VCO with Temperature Compensation","authors":"Qiuwei Wu, Xiaoyong Li, Xiaopeng Yu, J. Jin","doi":"10.1109/APMC46564.2019.9038876","DOIUrl":"https://doi.org/10.1109/APMC46564.2019.9038876","url":null,"abstract":"This paper presents a Ka-band class-C Voltage-Controlled Oscillator (VCO) with a temperature compensation circuit. The VCO core circuit is implemented by class-C topology with 6-bit capacitor array to achieve a wide frequency tuning range, 4GHz. The temperature compensation circuit consists of temperature detection circuit, logic circuit and bias voltage generate circuit. The Ka-band VCO is designed using TowerJazz $0.18 mumathrm{m}$ SiGe BiCMOS technology with a supply voltage of 3.3 V, and the effectiveness of the temperature compensation circuit is verified by the simulations when temperature varies from −40°C to 125°C. The VCO has the operating frequency ranges from 23.5 to 29.6GHz, and the phase noise at 1MHz offset frequency is - 107dBc/Hz while consumes 10mA from a 3.3V supply voltage. Without compensation, the frequency varies 360MHz over temperature, while the variation reduced to 31MHz with compensation.","PeriodicalId":162908,"journal":{"name":"2019 IEEE Asia-Pacific Microwave Conference (APMC)","volume":"83 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133293076","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Frequency Synthesizer for LO in Millimeter-wave 5G Massive MIMO System 毫米波5G大规模MIMO系统中LO的频率合成器
2019 IEEE Asia-Pacific Microwave Conference (APMC) Pub Date : 2019-12-01 DOI: 10.1109/APMC46564.2019.9038807
L. Kuai, W. Hong, Jixin Chen, Houxing Zhou
{"title":"A Frequency Synthesizer for LO in Millimeter-wave 5G Massive MIMO System","authors":"L. Kuai, W. Hong, Jixin Chen, Houxing Zhou","doi":"10.1109/APMC46564.2019.9038807","DOIUrl":"https://doi.org/10.1109/APMC46564.2019.9038807","url":null,"abstract":"In this paper, a frequency synthesizer for local oscillator (LO) in millimeter-wave 5G massive MIMO system is developed. The frequency synthesizer is based on the phase lock loop (PLL) scheme. Several factors that influence the phase noise, spurs and hopping time of PLL are analyzed. After balancing these performances, the phase detector frequency, loop filter, harmonic suppression filter, amplifiers, frequency doubler are designed, and the implemented PLL frequency synthesizer has low phase noise, low spurs, high output power and a very fine frequency resolution, which make it suitable to be used in 5G massive MIMO system.","PeriodicalId":162908,"journal":{"name":"2019 IEEE Asia-Pacific Microwave Conference (APMC)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133445207","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
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