A $X-/K_{\ mathm {u}}$- band支持双极化信号接收的qfn封装GaAs LNA

Chun Wang, Kuang-Yu Chen, Yu-Ling Lee, Chun-Hsing Li
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引用次数: 0

摘要

本文提出了一种用于卫星通信应用的$X-/K_{\ maththrm {u}}$ X-/K_{\ maththrm {u}}$ X-波段低噪声放大器(LNA),采用四平无引线封装。LNA能够支持双水平(H)和垂直(V)极化信号的接收,增加了信道容量。QFN封装的寄生效应由3D电磁模拟器捕获,然后与LNA共同设计,以在感兴趣的频带实现同时的噪声和阻抗匹配。采用$0.15-\mu \ mathm {m}$ GaAs pHEMT技术实现的qfn封装LNA可提供20.6和21.6 dB的功率增益,3db带宽为10.7至13.1 GHz, H极化通道和v极化通道的最小噪声系数(NF)分别为1.3 dB。功率消耗只有43.2兆瓦从一个1伏电源。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A $X-/K_{\mathrm{u}}$-Band QFN-Packaged GaAs LNA Supporting Dual-Polarization Signal Reception
A $X-/K_{\mathrm{u}}$-band low-noise amplifier (LNA) with quad flat no-leads (QFN) packaging for the satellite communication application is proposed in this work. The LNA is able to support the reception of dual horizontally (H) and vertically (V) polarized signals, increasing the channel capacity. The parasitic effect of the QFN package is captured by a 3D electromagnetic simulator and is then co-designed with the LNA to achieve simultaneous noise and impedance matching at the band of interest. Realized in a $0.15-\mu \mathrm{m}$ GaAs pHEMT technology, the proposed QFN-packaged LNA can provide power gain of 20.6 and 21.6 dB while having 3-dB bandwidth from 10.7 to 13.1 GHz and minimum noise figure (NF) of 1.3 dB for the H- and V-polarization channels, respectively. The power consumption is only 43.2 mW from a 1-V supply.
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