Chun Wang, Kuang-Yu Chen, Yu-Ling Lee, Chun-Hsing Li
{"title":"A $X-/K_{\\ mathm {u}}$- band支持双极化信号接收的qfn封装GaAs LNA","authors":"Chun Wang, Kuang-Yu Chen, Yu-Ling Lee, Chun-Hsing Li","doi":"10.1109/APMC46564.2019.9038788","DOIUrl":null,"url":null,"abstract":"A $X-/K_{\\mathrm{u}}$-band low-noise amplifier (LNA) with quad flat no-leads (QFN) packaging for the satellite communication application is proposed in this work. The LNA is able to support the reception of dual horizontally (H) and vertically (V) polarized signals, increasing the channel capacity. The parasitic effect of the QFN package is captured by a 3D electromagnetic simulator and is then co-designed with the LNA to achieve simultaneous noise and impedance matching at the band of interest. Realized in a $0.15-\\mu \\mathrm{m}$ GaAs pHEMT technology, the proposed QFN-packaged LNA can provide power gain of 20.6 and 21.6 dB while having 3-dB bandwidth from 10.7 to 13.1 GHz and minimum noise figure (NF) of 1.3 dB for the H- and V-polarization channels, respectively. The power consumption is only 43.2 mW from a 1-V supply.","PeriodicalId":162908,"journal":{"name":"2019 IEEE Asia-Pacific Microwave Conference (APMC)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A $X-/K_{\\\\mathrm{u}}$-Band QFN-Packaged GaAs LNA Supporting Dual-Polarization Signal Reception\",\"authors\":\"Chun Wang, Kuang-Yu Chen, Yu-Ling Lee, Chun-Hsing Li\",\"doi\":\"10.1109/APMC46564.2019.9038788\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A $X-/K_{\\\\mathrm{u}}$-band low-noise amplifier (LNA) with quad flat no-leads (QFN) packaging for the satellite communication application is proposed in this work. The LNA is able to support the reception of dual horizontally (H) and vertically (V) polarized signals, increasing the channel capacity. The parasitic effect of the QFN package is captured by a 3D electromagnetic simulator and is then co-designed with the LNA to achieve simultaneous noise and impedance matching at the band of interest. Realized in a $0.15-\\\\mu \\\\mathrm{m}$ GaAs pHEMT technology, the proposed QFN-packaged LNA can provide power gain of 20.6 and 21.6 dB while having 3-dB bandwidth from 10.7 to 13.1 GHz and minimum noise figure (NF) of 1.3 dB for the H- and V-polarization channels, respectively. The power consumption is only 43.2 mW from a 1-V supply.\",\"PeriodicalId\":162908,\"journal\":{\"name\":\"2019 IEEE Asia-Pacific Microwave Conference (APMC)\",\"volume\":\"13 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 IEEE Asia-Pacific Microwave Conference (APMC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/APMC46564.2019.9038788\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE Asia-Pacific Microwave Conference (APMC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/APMC46564.2019.9038788","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A $X-/K_{\mathrm{u}}$-Band QFN-Packaged GaAs LNA Supporting Dual-Polarization Signal Reception
A $X-/K_{\mathrm{u}}$-band low-noise amplifier (LNA) with quad flat no-leads (QFN) packaging for the satellite communication application is proposed in this work. The LNA is able to support the reception of dual horizontally (H) and vertically (V) polarized signals, increasing the channel capacity. The parasitic effect of the QFN package is captured by a 3D electromagnetic simulator and is then co-designed with the LNA to achieve simultaneous noise and impedance matching at the band of interest. Realized in a $0.15-\mu \mathrm{m}$ GaAs pHEMT technology, the proposed QFN-packaged LNA can provide power gain of 20.6 and 21.6 dB while having 3-dB bandwidth from 10.7 to 13.1 GHz and minimum noise figure (NF) of 1.3 dB for the H- and V-polarization channels, respectively. The power consumption is only 43.2 mW from a 1-V supply.