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Fourth Annual IEEE Semiconductor Thermal and Temperature Measurement Symposium最新文献

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Low speed wind tunnel testing 低速风洞试验
Fourth Annual IEEE Semiconductor Thermal and Temperature Measurement Symposium Pub Date : 1988-02-10 DOI: 10.1109/SEMTHE.1988.10594
M. Boyle
{"title":"Low speed wind tunnel testing","authors":"M. Boyle","doi":"10.1109/SEMTHE.1988.10594","DOIUrl":"https://doi.org/10.1109/SEMTHE.1988.10594","url":null,"abstract":"An introduction to wind tunnel design, wind tunnel data uncertainty analysis, and nondimensional presentation of measured data is presented. The primary components of a wind tunnel and the purposes of each are discussed. The importance of delivering uniform flow to the test section cross section is considered with regard to the effect of nonuniform flow on the measured thermal performance of a device, which is shown to be velocity-dependent. A simple methodology for constructing a wind tunnel with high-quality test section flow is described. The RMS (root-mean square) approach to uncertainty analysis is covered for several wind-tunnel-measured parameters. The significance of presenting measured results in a nondimensional coordinate system is illustrated by the discussion of a water tunnel experiment. The discussion is extended to the presentation of a hypothetical set of natural convection measurements and a nondimensional coordinate frame for this experiment is suggested.<<ETX>>","PeriodicalId":162566,"journal":{"name":"Fourth Annual IEEE Semiconductor Thermal and Temperature Measurement Symposium","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-02-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124803540","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Monitoring and analyzing the dynamic junction temperature distribution of RF power transistors by using RM-50 infrared micro imager 利用RM-50红外微成像仪对射频功率晶体管的结温分布进行了动态监测和分析
Fourth Annual IEEE Semiconductor Thermal and Temperature Measurement Symposium Pub Date : 1988-02-10 DOI: 10.1109/SEMTHE.1988.10602
G. Gao, Jinbao Zhu, Wu-chen Wu
{"title":"Monitoring and analyzing the dynamic junction temperature distribution of RF power transistors by using RM-50 infrared micro imager","authors":"G. Gao, Jinbao Zhu, Wu-chen Wu","doi":"10.1109/SEMTHE.1988.10602","DOIUrl":"https://doi.org/10.1109/SEMTHE.1988.10602","url":null,"abstract":"The authors describe experiments carried out on three types of RF power transistors typically used in the power amplifiers of communication systems. Because of differences found when measuring junction temperatures, a dynamic heat resistance concept was formulated to describe the dynamic thermal characteristics of RF power transistors. Using this concept, the handling capability, burn-in testing, life testing, and the reliability design of RF power transistors were studied. Among the results presented, it was found that the dynamic peak heat resistance is generally lower than the steady peak heat resistance, and steady peak heat resistance is more sensitive than the dynamic peak heat resistance to increasing DC voltage.<<ETX>>","PeriodicalId":162566,"journal":{"name":"Fourth Annual IEEE Semiconductor Thermal and Temperature Measurement Symposium","volume":"94 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-02-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125700482","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
PWB thermal modeling computer tools at Texas Instruments 德州仪器的PWB热建模计算机工具
Fourth Annual IEEE Semiconductor Thermal and Temperature Measurement Symposium Pub Date : 1988-02-10 DOI: 10.1109/SEMTHE.1988.10609
S. West, J. K. Pylant
{"title":"PWB thermal modeling computer tools at Texas Instruments","authors":"S. West, J. K. Pylant","doi":"10.1109/SEMTHE.1988.10609","DOIUrl":"https://doi.org/10.1109/SEMTHE.1988.10609","url":null,"abstract":"Printed wiring board (PWB) thermal modeling tools developed at Texas Instruments are described. These general programs help automate the processes of: finite-difference-model generation for PWBs and other rectangular, layered structures; definition of heat inputs to a thermal model of a PWB due to electronic components; and calculation of component junction temperatures for devices located on a modeled PWB. The features of the programs are described and their usefulness in the design environment is explained. The direction of current and anticipated future development is addressed.<<ETX>>","PeriodicalId":162566,"journal":{"name":"Fourth Annual IEEE Semiconductor Thermal and Temperature Measurement Symposium","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-02-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114243315","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
A review of thermal characterization of power transistors 功率晶体管热特性研究进展
Fourth Annual IEEE Semiconductor Thermal and Temperature Measurement Symposium Pub Date : 1988-02-10 DOI: 10.1109/SEMTHE.1988.10589
D. Blackburn
{"title":"A review of thermal characterization of power transistors","authors":"D. Blackburn","doi":"10.1109/SEMTHE.1988.10589","DOIUrl":"https://doi.org/10.1109/SEMTHE.1988.10589","url":null,"abstract":"The thermal characteristics of power transistors and their measurement are discussed. The devices discussed include bipolar transistors and metal-oxide-semiconductor field-effect transistors (MOSFETs). Measurement problems common to these devices are addressed, such as general methods for measuring device temperature, control of thermal environment, selection of a temperature-sensitive electrical parameter, measurement of temperature-sensitive electrical parameters, reasons for measuring temperature, and temperature measurement of integrated power devices. Procedures for detecting nonthermal switching transients, extrapolation of the measured temperature to the instant of switching, and for measuring the temperature of Darlington transistors are included. The needs for thermal characterization of evolving devices such as high voltage and power integrated circuits and merged bipolar/MOSFET devices are mentioned.<<ETX>>","PeriodicalId":162566,"journal":{"name":"Fourth Annual IEEE Semiconductor Thermal and Temperature Measurement Symposium","volume":"129 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-02-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121571524","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 62
An analysis technique for a small pulsed source connected to a large sink with application to gallium arsenide IMPATT diodes 一种小型脉冲源与大型接收器连接的分析技术，应用于砷化镓IMPATT二极管
Fourth Annual IEEE Semiconductor Thermal and Temperature Measurement Symposium Pub Date : 1988-02-10 DOI: 10.1109/SEMTHE.1988.10605
K. Avis, C. Kershner
{"title":"An analysis technique for a small pulsed source connected to a large sink with application to gallium arsenide IMPATT diodes","authors":"K. Avis, C. Kershner","doi":"10.1109/SEMTHE.1988.10605","DOIUrl":"https://doi.org/10.1109/SEMTHE.1988.10605","url":null,"abstract":"A methodology using numerical techniques is presented for the thermal analysis of a physically small pulsed heat source which is closely coupled to a relatively large heat sink. The methodology consists of creating a hierarchy of finite-difference models. These models consist of a highly detailed source model and several progressively less detailed sink models. The proper node size and time step for each model is individually determined depending on the geometry and pulse frequency. This process provides for efficient computer use by breaking the problem into several individual models with overlapping boundaries and the complexity of each model remains manageable. The methodology is applied to the analysis of a GaAs impact avalanche transit time (IMPATT) diode power combiner. This combiner is the radio-frequency source for the terminal guidance unit in a current air-to-air missile. The analytical predictions compared favorably with test results. The analysis was performed using the Hughes Aircraft Company proprietary version of the general thermal analyzer code CINDA.<<ETX>>","PeriodicalId":162566,"journal":{"name":"Fourth Annual IEEE Semiconductor Thermal and Temperature Measurement Symposium","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-02-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122688729","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Thermal design of integrated circuit devices 集成电路器件的热设计
Fourth Annual IEEE Semiconductor Thermal and Temperature Measurement Symposium Pub Date : 1988-02-10 DOI: 10.1109/SEMTHE.1988.10612
A. Palisoc, C.C. Lee
{"title":"Thermal design of integrated circuit devices","authors":"A. Palisoc, C.C. Lee","doi":"10.1109/SEMTHE.1988.10612","DOIUrl":"https://doi.org/10.1109/SEMTHE.1988.10612","url":null,"abstract":"An analytical solution derived by the authors (1986) for the thermal analysis of multisource, four-layer ICs has been useful in simulating device thermal properties. However, in the simulation of structures with large chip-to-heat-source size ratios, the computer program based on the exact solution requires a substantial amount of CPU time, making it impossible to carry out real-time thermal design of ICs having large numbers of small heat sources. A method is presented for the computer-aided thermal design of ICs in real time. This method uses a multiple regression technique whose input is the thermal profile due to a unit heat source over a multilayered unit structure. The profile in two dimensions is matched to an equation having several parameters. The temperature profiles of other devices having the same layered structure is computed by superposing the profile generated by the matched equation, shifted in position according to the source location and weighted by the source power.<<ETX>>","PeriodicalId":162566,"journal":{"name":"Fourth Annual IEEE Semiconductor Thermal and Temperature Measurement Symposium","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-02-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116750011","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Factors affecting semiconductor device thermal resistance measurements 影响半导体器件热阻测量的因素
Fourth Annual IEEE Semiconductor Thermal and Temperature Measurement Symposium Pub Date : 1988-02-10 DOI: 10.1109/SEMTHE.1988.10591
B. Siegal
{"title":"Factors affecting semiconductor device thermal resistance measurements","authors":"B. Siegal","doi":"10.1109/SEMTHE.1988.10591","DOIUrl":"https://doi.org/10.1109/SEMTHE.1988.10591","url":null,"abstract":"The usual industry practice is to assume that thermal resistance of a semiconductor device is constant, and thus independent of power dissipation level or ambient environment temperature. In fact, thermal resistance is not a constant and varies with both power and temperature. The degree of variation is dependent on several factors: the range of power and temperature variation, the type of device, chip layout, mounting methods, etc. Rather than attempting to cover all aspects of the topic in overview fashion, only power dissipation and environmental temperature considerations are considered. Power dissipation considerations for a diode, a transistor, and an integrated circuit are described, to show that there are significant power-dissipation-induced variations of thermal resistance. Ambient environment temperature considerations are discussed to demonstrate that thermal resistance is also dependent on the environmental temperature to which a device is subjected during thermal testing.<<ETX>>","PeriodicalId":162566,"journal":{"name":"Fourth Annual IEEE Semiconductor Thermal and Temperature Measurement Symposium","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-02-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121742489","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 27
Thermal dissipation characteristics of a non-hermetic metal dual in-line package 非密封金属双直列封装的散热特性
Fourth Annual IEEE Semiconductor Thermal and Temperature Measurement Symposium Pub Date : 1988-02-10 DOI: 10.1109/SEMTHE.1988.10600
A. Pasqualoni, J. Crane, M. Diorio
{"title":"Thermal dissipation characteristics of a non-hermetic metal dual in-line package","authors":"A. Pasqualoni, J. Crane, M. Diorio","doi":"10.1109/SEMTHE.1988.10600","DOIUrl":"https://doi.org/10.1109/SEMTHE.1988.10600","url":null,"abstract":"A study is described that evaluated the benefits of a metal cavity package on junction temperature and examined consequences of die-attach methods on a device's thermal properties. The measurements made to establish some of the factors affecting thermal transfer are outlined. Both infrared (IR) thermography and standard measurement methods were used to determine the thermal resistance for both a standard plastic dual-in-line package (P-DIP) and metal cavity package. The benefits of both approaches in assessing general thermal characteristics of the packages are discussed. The use of a metal cavity package was found to provide an excellent means of heat removal from the base of the die as long as die attach methods are sound, and the die attach medium is thermally conductive. It is also shown that it is possible to examine heat paths from the die to the case both qualitatively and quantitatively by IR thermography.<<ETX>>","PeriodicalId":162566,"journal":{"name":"Fourth Annual IEEE Semiconductor Thermal and Temperature Measurement Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-02-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129972856","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Effects of radiation on enhanced electronic cooling 辐射对增强电子冷却的影响
Fourth Annual IEEE Semiconductor Thermal and Temperature Measurement Symposium Pub Date : 1988-02-10 DOI: 10.1109/SEMTHE.1988.10614
L. Buller, B. Mcnelis
{"title":"Effects of radiation on enhanced electronic cooling","authors":"L. Buller, B. Mcnelis","doi":"10.1109/SEMTHE.1988.10614","DOIUrl":"https://doi.org/10.1109/SEMTHE.1988.10614","url":null,"abstract":"The radiation component of heat loss and the effect of heat sink orientation on the radiant interchange of heat between electronic components were investigated. The point at which the influence of forced convection cooling overrides the radiation losses was determined. It was assumed that the heat sink resides within a system environment and is used to cool a typical electronic component. The evaluation encompasses the natural convection cooling regime in both the thermally optimum vertical orientation as well as a horizontally mounted orientation. For both cases, the heat sink was evaluated with two surface coatings to determine the effect of the radiant heat loss. The experimental work was then extended to the forced-convection region to determine where the convective coefficient became dominant. A theoretical model was developed that is capable of predicting the radiation effects of high emissive heat sinks based on experimentally determined relationships of standard heat-sink material. It is concluded that the dissipation of heat by radiation could be substantial portion of the total power-dissipation capability.<<ETX>>","PeriodicalId":162566,"journal":{"name":"Fourth Annual IEEE Semiconductor Thermal and Temperature Measurement Symposium","volume":"25 5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-02-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131226942","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
TATTL: the automated thermal test lab 自动化热测试实验室
Fourth Annual IEEE Semiconductor Thermal and Temperature Measurement Symposium Pub Date : 1988-02-10 DOI: 10.1109/SEMTHE.1988.10616
J. Hayward
{"title":"TATTL: the automated thermal test lab","authors":"J. Hayward","doi":"10.1109/SEMTHE.1988.10616","DOIUrl":"https://doi.org/10.1109/SEMTHE.1988.10616","url":null,"abstract":"The development of the automated thermal test lab (TATTL) at Advanced Micro Devices originated in the need to improve the efficiency and resource utilization for the thermal characterization services provided by the Materials Research Laboratory. TATTL is a set of Fortran-77 real-time data acquisition and control modules which integrate the variety of instrumentation required for the performance of device calibration and junction-to-case thermal resistance, natural-convection, and forced-convection testing. The TATTL modules provided a complete environment within which thermal testing is performed and they are built on a central database unifying the information needed during testing and subsequent reporting of results. The architecture of the TATTL system and the hardware and software used in this implementation are described. Communication with instrumentation, operation in a real-time environment, and structuring of data for efficient transfer and report generation are discussed. The software runs on a DEC QBUS system, but in this discussion, emphasis is placed on the system structure rather than the details of coding.<<ETX>>","PeriodicalId":162566,"journal":{"name":"Fourth Annual IEEE Semiconductor Thermal and Temperature Measurement Symposium","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-02-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124044136","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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