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Fourth Annual IEEE Semiconductor Thermal and Temperature Measurement Symposium最新文献

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A study of thermal performance of packages using a new test die 用新型测试模对封装热性能的研究
Fourth Annual IEEE Semiconductor Thermal and Temperature Measurement Symposium Pub Date : 1988-02-10 DOI: 10.1109/SEMTHE.1988.10596
R. Pendse, B. Shanker
{"title":"A study of thermal performance of packages using a new test die","authors":"R. Pendse, B. Shanker","doi":"10.1109/SEMTHE.1988.10596","DOIUrl":"https://doi.org/10.1109/SEMTHE.1988.10596","url":null,"abstract":"A test die that uses power diodes for die heating and a string of emitter-base diodes for temperature sensing was designed and used for the thermal characterization of various very large-scale integration (VLSI) packages. The power diode, consisting of 100 minimum-geometry emitters, is contained entirely in the lower portion of the die. The temperature-sensing diodes consist of a string of 17 emitter-base diodes distributed over the die surface. The design allows for localized die heating and mapping of temperature variation over the surface of the die. Results of thermal measurements and die surface temperature mapping performed on a large die simulated by multiple-die assembly are presented and discussed. Topics investigated include package mold compound conductivity and substrate conductivity.<<ETX>>","PeriodicalId":162566,"journal":{"name":"Fourth Annual IEEE Semiconductor Thermal and Temperature Measurement Symposium","volume":"102 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-02-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127335813","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Junction-to-case thermal resistance-still a myth? 结对外壳的热阻——仍然是一个神话?
Fourth Annual IEEE Semiconductor Thermal and Temperature Measurement Symposium Pub Date : 1988-02-10 DOI: 10.1109/SEMTHE.1988.10590
V. B. Dutta
{"title":"Junction-to-case thermal resistance-still a myth?","authors":"V. B. Dutta","doi":"10.1109/SEMTHE.1988.10590","DOIUrl":"https://doi.org/10.1109/SEMTHE.1988.10590","url":null,"abstract":"After a brief review of MIL-STD-883C: Method 102 and SEMI Std. Doc. Hash 1321 for junction-to-case thermal resistance ( theta /sub JC/) measurements, an experiment to measure theta /sub JC/ of different K packages while altering the extrinsic variables is described. It is concluded that junction-to-case thermal resistance is not a physical constant: measurement conditions have a significant influence on this data. Thus, in order to make use of theta /sub JC/ data, it should be accompanied by measurement conditions, such as die size, power, and environment (type and intensity). These measurement conditions, all within the Standard's guideline, are discussed and recommendations for proper presentation and use of the information are emphasized.<<ETX>>","PeriodicalId":162566,"journal":{"name":"Fourth Annual IEEE Semiconductor Thermal and Temperature Measurement Symposium","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-02-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127574855","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 25
Thermal characterization of plastic and ceramic surface-mount packages 塑料和陶瓷表面贴装封装的热特性
Fourth Annual IEEE Semiconductor Thermal and Temperature Measurement Symposium Pub Date : 1988-02-10 DOI: 10.1109/SEMTHE.1988.10599
S.S. Furkay
{"title":"Thermal characterization of plastic and ceramic surface-mount packages","authors":"S.S. Furkay","doi":"10.1109/SEMTHE.1988.10599","DOIUrl":"https://doi.org/10.1109/SEMTHE.1988.10599","url":null,"abstract":"Summary form only given. The thermal performance of devices packaged with 28-, 44-, 68-, and 84-lead versions of the industry-standard plastic leaded chip carrier (PLCC) and also with 68-, 84-, 100-, and 124-lead plastic and ceramic flatpack components (PFP and CFP, respectively), are considered. Experimental data collected in both natural and forced convection conditions for individual components, surface mounted to small sections of epoxy circuit cards, are noted. The test vehicles were vertically mounted in separate rectangular channels and positioned to experience hydrodynamically developing flow. A custom thermal chip was used to both simulate device power and sense bulk chip temperature. Average air velocity and chip power dissipation were the primary independent test variables, ranging from 0 to 3 m/s and 0.2 to 2.0 W, respectively.<<ETX>>","PeriodicalId":162566,"journal":{"name":"Fourth Annual IEEE Semiconductor Thermal and Temperature Measurement Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-02-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130855375","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Isotherms in diamond heat sinks, non-linear heat transfer in an excellent heat condition 金刚石散热器中的等温线，在良好的热条件下的非线性传热
Fourth Annual IEEE Semiconductor Thermal and Temperature Measurement Symposium Pub Date : 1988-02-10 DOI: 10.1109/SEMTHE.1988.10611
J. Doting, J. Molenaar
{"title":"Isotherms in diamond heat sinks, non-linear heat transfer in an excellent heat condition","authors":"J. Doting, J. Molenaar","doi":"10.1109/SEMTHE.1988.10611","DOIUrl":"https://doi.org/10.1109/SEMTHE.1988.10611","url":null,"abstract":"A small fraction of all natural diamonds, called Type 2A diamonds, has a very low nitrogen content. In those diamonds thermal conductivity is primarily limited by carbon isotopes and dislocations. The heat conductivity at room temperature is typically 20 W/cm/ degrees C, the highest value for any known material at room temperature, but its heat conductivity is a nonlinear function of temperature. The use of Type 2A diamonds at heat sinks for microwave oscillators or diode laser substrates is described. A mathematical model of a copper-supported diamond heat sink is developed using an iterative scheme to compute the temperature and flux distribution at the diamond-copper boundary. Example results for a surface-mounted heat sink are presented.<<ETX>>","PeriodicalId":162566,"journal":{"name":"Fourth Annual IEEE Semiconductor Thermal and Temperature Measurement Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-02-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115780283","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Modeling and visualization of conductive temperature fields inside electronic component structures 电子元件结构内部导电温度场的建模与可视化
Fourth Annual IEEE Semiconductor Thermal and Temperature Measurement Symposium Pub Date : 1988-02-10 DOI: 10.1109/SEMTHE.1988.10610
P. Angot, J. Caltagirone
{"title":"Modeling and visualization of conductive temperature fields inside electronic component structures","authors":"P. Angot, J. Caltagirone","doi":"10.1109/SEMTHE.1988.10610","DOIUrl":"https://doi.org/10.1109/SEMTHE.1988.10610","url":null,"abstract":"Summary form only given, as follows. A general numerical code is reported which simulates the heat transfer inside microelectronic components for different environmental conditions. A two-dimensional scheme was implemented with control-volume techniques to solve the transient heat conduction equation in a heterogeneous and orthotropic rectangular domain. Inside this domain, the geometry of a given component section can be taken into account through a discretized rectangular grid. All parameters such as the heat capacity, thermal conductivity, and heat sources can be nodal-point-dependent and possibly varying with temperature or time. The method has been used to model cases for which great variations of thermal characteristics exist. Two types of boundary conditions can be introduced. The traditional external conditions can be expressed in terms of heat transfer coefficients and temperatures, while various internal heat transfer coefficients are used to simulate contact thermal resistances at the interfaces of different materials such as soldered joints or die-attaches.<<ETX>>","PeriodicalId":162566,"journal":{"name":"Fourth Annual IEEE Semiconductor Thermal and Temperature Measurement Symposium","volume":"342 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-02-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115450829","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Cumulative bibliography of articles on semiconductor thermal and temperature testing 关于半导体热和温度测试的文章的累积参考书目
Fourth Annual IEEE Semiconductor Thermal and Temperature Measurement Symposium Pub Date : 1900-01-01 DOI: 10.1109/SEMTHE.1988.10615
B. Siegal
{"title":"Cumulative bibliography of articles on semiconductor thermal and temperature testing","authors":"B. Siegal","doi":"10.1109/SEMTHE.1988.10615","DOIUrl":"https://doi.org/10.1109/SEMTHE.1988.10615","url":null,"abstract":"The bibliography given contains both journal and conference items, from as early as 1968, but primarily from 1980 to the present. All the entries listed in the bibliography provide information on semiconductor thermal and/or temperature characteristics, measurement techniques and results, hardware applications, and other pertinent information.<<ETX>>","PeriodicalId":162566,"journal":{"name":"Fourth Annual IEEE Semiconductor Thermal and Temperature Measurement Symposium","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116957417","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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