2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC)最新文献_第6页

Effect of Be segregation on NiSi/Si Schottky barrier heights Be偏析对NiSi/Si肖特基势垒高度的影响

2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC) Pub Date : 2011-10-13 DOI: 10.1109/ESSDERC.2011.6044193

V. Gudmundsson, P. Hellstrom, M. Ostling

引用次数: 0

Analog design trends and challenges in 28 and 20nm CMOS technology 28纳米和20纳米CMOS技术的模拟设计趋势和挑战

2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC) Pub Date : 2011-10-13 DOI: 10.1109/ESSDERC.2011.6044243

P. Dautriche

引用次数: 8

Variability analysis of scaled poly-Si channel FinFETs and tri-gate flash memories for high density and low cost stacked 3D-memory application 用于高密度和低成本堆叠3d存储器应用的缩放多晶硅通道finfet和三门闪存的可变性分析

2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC) Pub Date : 2011-10-13 DOI: 10.1109/ESSDERC.2011.6044199

Y. Liu, T. Mastukawa, K. Endo, S. Oruchi, J. Tsukada, H. Yamauchi, Y. Ishikawa, K. Sakamoto, M. Masahara, T. Kamei, T. Hayashida, A. Ogura

引用次数: 1

Current status on GaN-based RF-power devices 基于氮化镓的射频功率器件的现状

2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC) Pub Date : 2011-10-13 DOI: 10.1109/ESSDERC.2011.6044237

T. Ueda, Tsuyoshi Tanaka, D. Ueda

{"title":"Current status on GaN-based RF-power devices","authors":"T. Ueda, Tsuyoshi Tanaka, D. Ueda","doi":"10.1109/ESSDERC.2011.6044237","DOIUrl":"https://doi.org/10.1109/ESSDERC.2011.6044237","url":null,"abstract":"In this paper, we review the recent advances of GaN power switching and RF transistors developed at Panasonic. The presented devices are formed on cost effective Si substrates, which are very promising for the future mass production contributing to the reduction of the total fabrication cost. We develop the epitaxial growth technology using metal organic chemical vapor deposition (MOCVD) over 6-inch Si substrates by novel buffer layers relaxing the stress caused by the lattice and the thermal mismatches. Aiming at the power switching applications, we propose a new device structure called Gate Injection Transistor (GIT) for strongly desired normally-off operation together with low on-state resistances. The GITs are applied for an inverter to drive a motor which exhibits high operating efficiencies. Further increase of the breakdown voltages up to 2200V on Si is achieved by a novel Blocking Voltage Boosting (BVB) structure which prevents the inversion elections at the AlN/Si flowing at the periphery of the chips. As for the RF devices, we present 203W output power at 2.5GHz and 10.7W at 26.5GHz by AlGaN/GaN devices on Si. These GaN-based switching and RF power devices on Si substrates are very promising for a variety of applications taking advantages of their inherent low cost with superior performances.","PeriodicalId":161896,"journal":{"name":"2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125872603","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 4

Impact of the carrier distribution function on hot-carrier degradation modeling 载流子分布函数对热载流子退化建模的影响

2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC) Pub Date : 2011-10-13 DOI: 10.1109/ESSDERC.2011.6044212

S. Tyaginov, I. Starkov, C. Jungemann, H. Enichlmair, Jong-Mun Park, T. Grasser

{"title":"Impact of the carrier distribution function on hot-carrier degradation modeling","authors":"S. Tyaginov, I. Starkov, C. Jungemann, H. Enichlmair, Jong-Mun Park, T. Grasser","doi":"10.1109/ESSDERC.2011.6044212","DOIUrl":"https://doi.org/10.1109/ESSDERC.2011.6044212","url":null,"abstract":"We employ a physics-based model for hot-carrier degradation (HCD), which includes three main sub-tasks: the carrier transport module, a module describing interface state generation and a module for the simulation of the degraded devices. We examine different realizations of the model: with the transport module represented by Monte-Carlo, energy transport and drift-diffusion schemes. The main version, based on the Monte-Carlo approach, is able to represent HCD observed in different MOSFETs using the same set of the model parameters. These parameters have reliable and physically reasonable values. Therefore, we check whether two other versions are capable of the same representation (with the same parameters) or not. It appears that the simplified treatments fail to describe the degradation in devices of the same architecture but with different channel lengths employing a unique set of parameters. This circumstance suggests that a comprehensive HCD model has to be based on a rigorous solution of the Boltzmann transport equation (e.g. by means of a Monte-Carlo method).","PeriodicalId":161896,"journal":{"name":"2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC)","volume":"81 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124109523","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 19

An investigation on steep-slope and low-power nanowire FETs 陡坡低功率纳米线场效应管的研究

2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC) Pub Date : 2011-10-13 DOI: 10.1109/ESSDERC.2011.6044175

E. Gnani, P. Maiorano, S. Reggiani, A. Gnudi, G. Baccarani

引用次数: 4

Noise performance in strained Si heterojunction bipolar transistors 应变硅异质结双极晶体管的噪声性能

2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC) Pub Date : 2011-10-13 DOI: 10.1109/ESSDERC.2011.6044182

M. Fjer, S. Persson, E. Escobedo-Cousin, A. O'Neill

引用次数: 0

High-speed PNP PIN phototransistors in a 0.18 μm CMOS process 高速PNP PIN光电晶体管的0.18 μm CMOS工艺

2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC) Pub Date : 2011-10-13 DOI: 10.1109/ESSDERC.2011.6044203

P. Kostov, W. Gaberl, H. Zimmermann

引用次数: 4

Challenges in TCAD simulations of tunneling field effect transistors 隧道场效应晶体管TCAD仿真的挑战

2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC) Pub Date : 2011-10-13 DOI: 10.1109/ESSDERC.2011.6044215

C. Kampen, A. Burenkov, Jurgen Lorenz

引用次数: 12

EM-TCAD solving from 0–100 THz: A new implementation of an electromagnetic solver EM-TCAD求解0 - 100thz:电磁求解器的新实现

2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC) Pub Date : 2011-10-13 DOI: 10.1109/ESSDERC.2011.6044162

Quan Chen, W. Schoenmaker, N. Banagaaya, W. Schilders, N. Wong

引用次数: 1