Challenges in TCAD simulations of tunneling field effect transistors

Abstract

In this paper we present an extensive comparison of tunneling device simulations versus experimental results. Different tunneling models were used to simulate long channel silicon on insulator tunneling field effect transistors. The results were compared to experimental results, which were taken from the literature. A calibrated parameter set of the dynamic NonLocal-Tunneling model is presented, which qualitatively reproduces the experimental results at different electrostatic potential conditions and physical gate lengths.